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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 596-601 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The quadratic nonlinear optical coefficient in the AlGaAs system has been systematically measured as a function of the alloy composition at the fundamental wavelength of 1.064 μm by the method of reflected harmonics. The harmonic waves from the thin-film samples are analyzed considering various interferences including multiple reflections. The experimental results show a reduction of the magnitude of the second-harmonic coefficient with increasing Al content in the AlGaAs system. This tendency is consistent with Miller's rule.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1352-1354 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optical absorption spectrum of polydiacetylene (PDA) crystalline films shifts toward higher energies as irregularity in molecular ordering is increased. We view this behavior in terms of the reduced overlap of conjugated π-electron wave function among one-dimensional PDA molecular wires. This point is further discussed by using the Kronig–Penney model, in which the influence of irregularity in molecular ordering is assessed in terms of a change in the intermolecular distance which in turn shifts the fundamental absorption edge. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2806-2808 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Field emission characteristics of B-doped diamond thin films terminated with oxygen and hydrogen were investigated. The diamond thin films were prepared by microwave plasma chemical vapor deposition. The dependence of emission characteristics on the surface treatment and on the B concentration was investigated. The turn-on voltage required to extract a current of 0.1 nA depended on these preparation parameters. The emitters with lower B concentration emitted electrons at a lower turn-on voltage, and the H-terminated emitters had a lower turn-on voltage than O-terminated emitters. The analysis of the slope and the intercept of Fowler–Nordheim plot revealed that the dependence of turn-on voltage on the surface treatment is due to the difference of emission barrier height, and that the dependence on B concentration is due not to the emission barrier height but to the surface morphology. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1317-1319 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have demonstrated that the supercurrent distribution in current-biased YBa2Cu3O7−δ thin films can be obtained by measuring the radiation power of THz electromagnetic pulses excited with femtosecond laser pulses. As the radiation power is proportional to the square of the bias current density at the laser spot position, the two-dimensional current distribution can be obtained from the intensity distribution of THz radiation by scanning the laser spot. The characteristic supercurrent distribution is analyzed by using the critical-state model. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 962-964 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigate the effect of the sequence of gas flows at heterointerfaces on optical quality of GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition (MOCVD). We point out that the degradation mechanism of photoluminescence of GaInNAs grown by MOCVD method is categorized in two types. One is the formation of a GaNAs layer at the heterointerface which causes both increase of emission wavelength and degradation of crystal quality. The other is generation of nonradiative centers induced by incorporation of nitrogen (N). The insertion of a GaInAs layer to the GaInNAs/GaAs heterointerface is proposed to overcome these degradation mechanisms. A GaInAs intermediate layer is effective to suppress the GaNAs formation and to reduce the total GaInNAs thickness. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2575-2577 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated superconductive Nb-(fine Nb wires)-NbN short weak links. We find that their quasiparticle characteristics can be well explained using the theory of T. M. Klapwijk, G. E. Blonder, and M. Tinkham [Physica B and C 109 & 110B 1657 (1982)] based on the Andreev reflection phenomenon at two independent normal metal-superconductor interfaces for the case of a negligible effective barrier potential. For such devices, there is found no measurable excess noise associated with the Andreev reflection itself and device voltage noise clearly exhibits both thermal and shot noise limits. Although the device structure is fundamentally different, in the whole studied range of bias voltages, the voltage noise properties of our short weak links are found to be qualitatively comparable to those of small-area tunnel junctions.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 145-146 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new scheme for characterizing the quadratic optical nonlinearity of thin films grown on opaque substrates is proposed and demonstrated. This involved the measurement, as a function of the film thickness, of second-harmonic waves reflected from a film surface. The d36 coefficient of a ZnSe-on-GaAs film is estimated by this method to be 33±7 pm/V at the fundamental wavelength of 1.06 μm, which agrees reasonably well with the known value for the bulk crystal.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 197-199 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: p-type shallow junction formation requires residual defects reduction for ion implantation to suppress boron-enhanced diffusion. We have demonstrated that MeV ion implantation is effective to reduce end-of-range defects for shallow junction formation. F+ preimplantation was carried out at 40 keV with a dose of 1×1015 cm−2. B+ ions were implanted at 10 keV with a dose of 5×1015 cm−2 in the F+-preimplanted samples, followed by 1 MeV F+, Si+, or 2 MeV As+ implantation at substrate temperatures of room temperature and 400 °C with doses ranging from 5×1014 to 5×1015 cm−2. Annealing was carried out by rapid thermal annealing at 1000–1100 °C for 10 s. F+ preimplantation induced shallower junction formation, however, much reduction of the junction depth was observed by 1 MeV F+ or Si+ implantation, because of end-of-range defects reduction for the suppression of boron-enhanced diffusion. About a 50% shallower junction depth was obtained by F+ preimplantation, followed by 1 MeV F+ or Si+ implantation, when this junction was compared with just B+-implanted samples.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Macromolecules 25 (1992), S. 3377-3380 
    ISSN: 1520-5835
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Science Ltd
    Clinical & experimental allergy 34 (2004), S. 0 
    ISSN: 1365-2222
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Background We identified five Cryptomeria japonica trees producing Cry j 1 isoforms that cannot be detected in a sandwich ELISA using two monoclonal antibodies, J1B01 and J1B07, suggesting that the binding affinity of these isoforms for both monoclonal antibodies is low.Objectives The binding properties of the Cry j 1 isoforms produced by five trees to J1B07 and J1B01 were examined. The complementary DNA (cDNA) sequences of the Cry j 1 isoforms were also determined.Methods To clarify the binding properties of these Cry j 1 isoforms to J1B01 and J1B07, Cry j 1 was quantified in pollen samples collected from each of the five trees, by sandwich ELISAs using polyclonal antibodies and either J1B01 or J1B07. The cDNA sequences of isoforms with different binding properties were determined. To test the assumption that amino acid substitutions affect the binding affinities of Cry j 1 isoforms for monoclonal antibodies, cleaved amplified polymorphic sequences (CAPS) markers representing the putative polymorphisms were used to analyse additional trees.Results Four of the five trees produced Cry j 1 isoforms with extremely low binding affinity for J1B07, whereas the other tree produced two different isoforms with low binding affinity for either J1B01 or J1B07. Cry j 1-encoding cDNA sequences for one of the four trees and for the exceptional fifth tree indicate that amino acid substitutions at positions 55 and 352 in mature Cry j 1 affect its binding to J1B01 and J1B07, respectively. This was supported by the results of CAPS analysis.Conclusion The existence of Cry j 1 isoforms with low binding affinity for either J1B01 or J1B07 was established. Furthermore, a single amino acid substitution is involved in this difference in binding affinity for each monoclonal antibody.
    Materialart: Digitale Medien
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