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  • 1
    Electronic Resource
    Electronic Resource
    Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 533-535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful fabrication of thin GaAs quantum wires (120–200 A(ring))×(200–300 A(ring)) by a novel metal-organic chemical-vapor-deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO2 masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350695
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  • 2
    Electronic Resource
    Electronic Resource
    Photorefractive InGaAs/GaAs multiple quantum wells in the Franz–Keldysh geometry (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5889-5896 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricate semi-insulating InGaAs/GaAs multiple quantum wells and observe the excitonic enhancement of the photorefractivity in the Franz–Keldysh geometry at wavelengths of 0.92–0.94 μm. A maximum two-wave mixing gain of 138 cm−1 and a maximum diffraction efficiency of 1.5×10−4 are obtained. The saturation intensity and the spatial resolution are also measured by four-wave mixing. The diffraction efficiency is saturated at a high external electric field. The dominant cause of this saturation is the deviation of the excitonic electroabsorption from its quadratic law. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370364
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of lasing characteristics of quantum well lasers on substrate orientation: Tight-binding theory (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 881-883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band-structure analysis using the tight-binding method indicates that there is a significant dependence of lasing properties of GaAs/AlGaAs quantum well lasers on substrate orientation, which suggests the importance of choosing the substrate orientation carefully for improving lasing properties. These results are mainly due to changes in the in-plane effective mass of the heavy hole.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104466
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced and inhibited spontaneous emission in GaAs/AlGaAs vertical microcavity lasers with two kinds of quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2339-2341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate enhanced and inhibited spontaneous emission effects in a vertical λ-microcavity structure having two kinds of quantum wells (QWs) with the thicknesses of 76 and 114 A(ring), measuring both photoluminescence intensity and carrier lifetime. The 76 and 114 A(ring) QWs are placed at the maximum and at the nodes of the emitted standing wave in the microcavity, respectively. When the λ-microcavity mode is tuned to the quantized band-gap energy of the 76 A(ring) QWs (enhanced condition), the PL intensity is enhanced compared with the case that the cavity mode is tuned to the quantized band-gap energy of the 114 A(ring) QWs (inhibited condition). In addition, the increase of the carrier lifetime is also observed under the inhibited condition. These results demonstrate existence of enhanced and inhibited spontaneous emission effects in the microcavity structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104918
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  • 5
    Electronic Resource
    Electronic Resource
    Picosecond dynamics in gain-switched uncoupled and coupled quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We experimentally demonstrate the importance of two-dimensional carrier confinement for picosecond dynamics in gain-switched quantum well lasers, measuring time-resolved spectra of gain-switched quantum well (QW) lasers with coupled QWs and uncoupled QWs. The result indicates that an extremely short pulse (〈2 ps) is generated in the uncoupled QW lasers. On the other hand, the pulse duration is about 10 ps in the coupled QW lasers in which the two-dimensional confinement effect is significantly reduced owing to the miniband formation. These results demonstrate the importance of the two-dimensional confinement of carriers for the short pulse generation in the semiconductor lasers. The measured dynamic spectral shift of the gain-switched QW lasers also confirm the significant role of the two-dimensional carrier confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105011
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  • 6
    Electronic Resource
    Electronic Resource
    In situ patterning of contamination resists in metalorganic chemical vapor deposition for fabrication of quantum wires (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2372-2374 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrated a novel selective growth technology for the fabrication of quantum microstructures utilizing in situ patterning of contamination resist in the metalorganic chemical vapor deposition system. The results indicate that a GaAs quasi-quantum wire structure, as narrow as 700 nm, can be successfully fabricated, showing that this technique may be applied to fabrication technologies for quantum microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104874
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Differential gain of GaAs/AlGaAs quantum well and modulation-doped quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The differential gain which is an important parameter for modulation dynamics in semiconductor lasers is evaluated experimentally by measuring the gain coefficient and the carrier lifetime in GaAs/AlGaAs double-heterostructure (DH) lasers, quantum well (QW) lasers, and p-modulation-doped quantum well (p-MDQW) lasers. The results indicate that the differential gain of the QW laser is 2.4 times as high as that of the DH laser, which is consistent with the theory. In addition, it is found that improvement of the differential gain using the p-MDQW structure is not so large as that expected by the theory. This result suggests that enhanced energy broadening due to the reduction of the equivalent dephasing time τeqin, which includes both the dephasing time τin due to the intraband relaxation and the band tailing effects, significantly affects the gain spectra in the p-MDQW lasers, which is confirmed by the measurement of the spontaneous emission spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104440
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  • 8
    Electronic Resource
    Electronic Resource
    Wavelength switching of picosecond pulse (〈10 ps) in a quantum well laser and its all-optical logic gating operations (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We developed a novel technique to switch the lasing wavelength of picosecond pulses in an optically pumped quantum well laser by utilizing spatially localized and homogeneous excitation. The applications of these phenomena to ultrafast logic gating operations are successfully demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105116
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  • 9
    Electronic Resource
    Electronic Resource
    Light emission from individual self-assembled InAs/GaAs quantum dots excited by tunneling current injection (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1460-1462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report emission from individual quantum dots excited by tunneling current injection using a scanning tunneling microscope (STM). By scanning the STM tip above the self-assembled InAs quantum dots, a spatially resolved scanning tunneling luminescence (STL) image was measured, which contained a fluorescent circular region with a diameter of 50 nm originating from a single InAs quantum dot. It was found that the spatial resolution of the STL system was about 40 nm, which is mainly due to lateral diffusion of holes injected into a GaAs capping layer grown at low temperature (480 °C). We also obtained STL spectra with a sharp single luminescent peak from a single InAs quantum dot. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122174
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of carrier transport/capture and gain flattening in picosecond pulse generation of InGaAs microcavity lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3137-3139 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and studied the dynamics of In0.16Ga0.84As λ-cavity lasers focusing on the influence of carrier transport/capture and gain flattening by using optical resonant pumping and off-resonant pumping. With the off-resonant pumping, shoulders in the lasing pulse shape were observed, while no shoulder appeared with the on-resonant pumping. From rate equation analysis and time-resolved photoluminescence measurement, it was concluded that the shoulders result from carrier transport/capture effects. Saturation of the inverse rise time was observed at high pump levels. This results from gain flattening due to the steplike density of states of 2D carriers. The pulse width obtained from the laser was as narrow as 7.7 ps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116807
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