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  • 1
    Electronic Resource
    Electronic Resource
    Implantation temperature effect on polycrystalline silicon by ion shower doping (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7114-7117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a new doping technique using an ion shower doping system with a bucket ion source. Phosphorus atoms were implanted in polycrystalline silicon from room temperature to 300 °C. Sheet resistances were significantly reduced by raising the implantation temperature. With a crystal fraction of 85%, sheet resistance was 5×102 S−1/(D'Alembertian) as implanted. These effects were not due to pure thermal annealing by ion beam heating. A significant improvement was found in sheet resistance as a result of averaging the impurity profile by radiation enhanced diffusion and low temperature recrystallization of the implanted region by collision of atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355026
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  • 2
    Electronic Resource
    Electronic Resource
    Polycrystalline silicon formed by ultrahigh-vacuum sputtering system (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 217-223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an ultrahigh-vacuum (UHV) sputtering system, we could grow two new methods of polycrystalline silicon films. The one is as-deposited polycrystalline silicon on glass at substrate temperatures under 500 °C. The other is solid-phase-crystallization by thermal annealing of as-deposited amorphous silicon films in a UHV. As-deposited polycrystalline silicon films were oriented to (220) and grain sizes were determined from half-width of x-ray diffraction to be about 40 nm. From the deposition temperature dependence of the x-ray diffraction peak intensity, the activation energy of the crystalline growth was calculated to be about 0.6 eV. Hydrogen atoms in the sputtering gas lower the reproducibility of as-deposited poly-Si. Polycrystalline silicon films produced by thermal annealing of as-deposited amorphous silicon films at 550 °C in UHV have a (111) orientation. Field-effect mobilities of the as-deposited polycrystalline silicon film and the polycrystalline silicon film by UHV thermal annealing were 5 and 18 cm2/V s, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360782
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen effusion from hydrogenated amorphous silicon caused by the deposition of a silicon nitride overlayer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 39-41 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of silicon nitride (SiN) deposition on hydrogenated amorphous silicon (a-Si:H) has been investigated to find the origin of the difference of a-Si:H/SiN interface properties caused by the order of deposition. Sheet conductance of the on-state in inverted staggered (a-Si:H on SiN) thin-film transistors (TFTs) increases gradually with the substrate temperature (Tsub) of SiN, but decreases rapidly with the Tsub of SiN in staggered TFTs (SiN on a-Si:H). Photoluminescence experiments indicated that the degradation in staggered TFTs was due to the creation of defects in a-Si:H by the deposition of the SiN overlayer. It was shown by Fourier transform infrared attenuated total reflection that the origin of the defects was hydrogen effusion from a-Si:H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104430
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  • 4
    Electronic Resource
    Electronic Resource
    Threshold voltage shift of amorphous silicon thin-film transistors by step doping (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 606-607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threshold voltage (VT) shift of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) by boron doping has been investigated. In TFTs with a uniformly doped structure (SiN/B-doped a-Si:H), VT shifts to a positive voltage by boron doping, while the field-effect mobility decreases markedly. By using a step-doped structure (SiN/undoped a-Si:H/B-doped a-Si:H), the degradation of the field-effect mobility by boron doping becomes less than that of a uniformly doped TFT with the same VT shift, and a VT shift of 3.5 V was obtained without degradation of the field-effect mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100892
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of the bubble formation mechanism in a-Si:H films by Fourier-transform infrared microspectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3972-3974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of bubbles and holes in hydrogenated amorphous silicon (a-Si:H) films after isochronal annealing has been investigated. The internal stress of the bubble in an a-Si:H film has been determined by the relationship between the diameter and height of a bubble. In addition, the internal stress of the bubble has also been investigated based on the difference in hydrogen concentration between the flat and bubble areas determined by Fourier-transform infrared microspectroscopy. Consistent results are obtained from both methods regarding the magnitude of the internal stress. These results indicate that the bubble is formed by molecular hydrogen evolving from the a-Si:H film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341355
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of hydrogen ion shower doping in polycrystalline silicon thin-film transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 31-33 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effect of hydrogen ion shower doping on polycrystalline silicon thin-film transistors (p-Si TFTs). Hydrogen atoms were introduced to the channel region of p-Si TFTs by PH3/H2 ion shower doping of the source/drain contact. Hydrogen concentration in the channel region can be controlled by altering the gate metal thickness. Hydrogen atoms affect the TFT's threshold voltage shifts until it becomes negative, in n-type TFTs. The threshold voltage shift depends on the hydrogen content of the channel region in p-Si TFTs. This is explained by the existence of Si−3 trap states in the grain boundaries. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114171
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  • 7
    Electronic Resource
    Electronic Resource
    Resolution improvement for linear image sensors using indium-tin-oxide/amorphous silicon junctions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2143-2147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes two types of photodiode arrays using indium-tin-oxide/amorphous silicon (ITO/a-Si:H) junctions for a contact-type linear image sensor. One type is a photodiode array of separated ITO electrodes, an a-Si:H stripe layer, and a common metal (Cr) electrode. The other consists of a common ITO electrode, an a-Si:H stripe layer, and separated Cr electrodes. We investigated the bias dependence of the photocurrent and its spatial distribution for the two types of diode array. Our results indicate that the photocarriers generated around the element for a common ITO electrode type deteriorate the resolving power of the diode array, which can be improved by using separated ITO electrodes. A separated ITO electrode increases the modulation transfer function and the fineness of linear image sensors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345549
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  • 8
    Electronic Resource
    Electronic Resource
    Immunopathology of vitiligo vulgaris, Sutton's leukoderma and melanoma-associated vitiligo in relation to steroid effects (1984)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of cutaneous pathology 11 (1984), S. 0 
    Details
    ISSN: 1600-0560
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Microsome, thyroid and DNA tests on patients with generalized vitiligo vulgaris, with or without Sutton's leukoderma, show a high positive rate without thyroid diseases. A small, hut not negligible, amount of IgG and O deposits in the basement-membrane zone and Keratinocytes, has been frequently seen in these diseases by immunohistoogy and immunoelectron microscopy. This evidence strongly suggests an autoimmune character for these diseases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0560.1984.tb00361.x
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  • 9
    Electronic Resource
    Electronic Resource
    Morphological Changes in Human Melanoma Cells Following Irradiation With Thermal Neutrons (1989)
    Oxford, UK : Blackwell Publishing Ltd
    Periodontology 2000 2 (1989), S. 0 
    Details
    ISSN: 1600-0757
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Morphological changes in two human melanoma cell lines, MM96 and MM418, following irradiation with thermal neutrons, were studied using light and electron microscopy. The results show that the response of human malignant melanoma cells to neutron irradiation is both cell line dependent and dose dependent, and that in any given cell line, some cells are more resistant to irradiation than others, thus demonstrating heterogeneity in respect to radiosensitivity. Cells repopulating MM96 flasks after irradiation were morphologically similar to the cells of origin whereas in MM418 flasks cells differentiated into five morphologically distinct subgroups and showed increased melanization. The results also show that radiation causes distinctive morphological patterns of damage although ultrastructural changes unique to the high LET particles released from boron 10 neutron capture are yet to be identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0749.1989.tb00217.x
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  • 10
    Electronic Resource
    Electronic Resource
    Recommendations to the Japanese and Australian Governments for Future Research and Development of Melanoma Neutron Capture Therapy (1989)
    Oxford, UK : Blackwell Publishing Ltd
    Periodontology 2000 2 (1989), S. 0 
    Details
    ISSN: 1600-0757
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0749.1989.tb00225.x
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