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  • 1
    Electronic Resource
    Electronic Resource
    Crystal orientation domains found in the single lamina in nacre of the Mytilus edulis shell (1999)
    Springer
    Journal of materials science 18 (1999), S. 1547-1549 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006687627323
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  • 2
    Electronic Resource
    Electronic Resource
    Crystallographic alignment of calcite prisms in the oblique prismatic layer of Mytilus edulis shell (2000)
    Springer
    Journal of materials science 35 (2000), S. 3337-3340 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The structure and crystallographic orientation of mineral phase in the oblique prismatic layer of Mytilus edulis shell were studied by SEM, XRD and TEM with selected area electron diffraction (SAED). A crystallographic orientation regulation, i.e. the adjacent 1–5 calcite prisms with the same three-dimensional orientation in the oblique prismatic layer, was found for the first time. It is observed that the calcite prisms in the oblique prismatic layer were grown with their (104) parallel to the shell surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004843900161
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  • 3
    Electronic Resource
    Electronic Resource
    Paramagnetism and scaling behavior of volume flux pinning force density in a GdBa2Cu3O6+x thin film (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3287-3292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic measurements have been performed on a GdBa2Cu3O6+x superconducting thin film. The paramagnetism carried by rare earth Gd3+ ions in the film tilts the magnetic hysteresis loop and broadens the width of the magnetic hysteresis ΔM, then the magnetization critical current density and the volume flux pinning force density based on the Bean critical state model deviate from intrinsic values. Therefore, in order to get useful information on the pinning mechanism, correction for the paramagnetism is essential. And after correction for the paramagnetism, a scaling law of the volume flux pinning force density is obtained as f(b)=(b/4)0.5(1−b/4)1.5, based on which the possible pinning mechanism in the film is discussed. In the end, deviation from the scaling law at high fields is interpreted by the collective pinning theory. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360019
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of strained InxGa1−xAs-Al0.28Ga0.72As heterostructures grown by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 246-250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence measurements were carried out on pseudomorphically strained InxGa1−xAs-Al0.28Ga0.72As ternary-on-ternary heterostructures grown by molecular-beam epitaxy to investigate the change in the transition energy and linewidth as a function of InGaAs well thickness at two different indium compositions x=0.10 and x=0.15, respectively. Sharp exciton peaks as narrow as 4–6 meV were observed from the InGaAs wells grown at 530 °C with 1 min of growth interruption at the top and bottom heterointerfaces. The linewidth decreases as the well thickness is increased up to 300 A(ring). In addition, there are signs of linewidth broadening at higher well thicknesses which may indicate the onset of plastic relaxation. Relatively small variations in the transition energy were observed at well thicknesses which are above the theoretical critical thickness as calculated by the Matthews–Blakeslee model [J. Cryst. Growth 27, 118 (1974)], suggesting the existence of a second critical thickness higher than the theoretical value. Good agreement between experimental and calculated transition energy versus well thickness data was obtained, from which the conduction-band offset ΔEc/ΔEg was estimated to be 0.65±0.05 for x=0.10–0.15, consistent with the results derived from other techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357135
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  • 5
    Electronic Resource
    Electronic Resource
    Application of the principle of minimum entropy production to shock wave reflections. I. Steady flows (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2027-2037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on new experimental results of Chpoun, Passerel, Li, and Ben-Dor [J. Fluid Mech. 301, 19 (1995)] and numerical results of Vuillon, Zeitoun, and Ben-Dor [J. Fluid Mech. 301, 37 (1995)] regarding the shock wave reflection transitions from regular to Mach reflection and from Mach to regular reflection in steady flows of perfect gases which contradicted the present understanding regarding these processes [Hornung and Robinson, J. Fluid Mech. 123, 155 (1982)], we present a new approach for better understanding the supersonic flow deflection over straight wedges and the transition of steady shock wave reflections over straight wedges. The new approach is based on the principle of minimum entropy production which enables one to choose the physical (stable) solutions out of a variety of possible mathematical ones. To the best of our knowledge the new transition criteria which are proposed in this study agree with all the available experimental results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363096
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  • 6
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Fe–N films prepared by ion-beam-assisted deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3299-3302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe–N films were prepared by ion-beam-assisted deposition at different N/Fe atomic arrival ratios to the substrates. Films consisted of nitrogen-rich α-Fe and different phases of iron nitrides including ζ-Fe2N, ε-Fe2-3N, and γ′-Fe4N were formed. The phase composition of Fe–N films was found to depend sensitively on the N/Fe atomic arrival ratio and deposition temperature. The magnetic properties of the films mainly depends on phase composition. It was found that nitrogen-rich α-Fe films exhibited higher Ms than that of the pure iron film, and their Ms could be increased further by vacuum annealing at relatively low temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360021
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  • 7
    Electronic Resource
    Electronic Resource
    Transfer-matrix analysis of waveguide phase modulator using the linear electro-optic effect of asymmetric quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4903-4905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase modulation of asymmetric quantum-well embedded waveguides is studied. In order to accurately analyze the modulation from quantum wells and optimize the performance of waveguide modulators, a transfer-matrix method is developed to calculate the bias-controlled phase modulation of waveguides with an arbitrary refractive index distribution. The refractive index change may include those from free-carrier effects and the nonlinear effects of bulk material and quantum wells. The linear electro-optic effect introduced by asymmetric quantum wells can potentially be used to improve the frequency performance of semiconductor waveguide phase modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357271
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  • 8
    Electronic Resource
    Electronic Resource
    Application of the principle of minimum entropy production to shock wave reflections. II. Pseudosteady flows (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2038-2048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of both regular reflection and Mach reflection wave configurations in pseudosteady flows has been investigated by applying the principle of minimum entropy production, in a way similar to that done by us in Part I of this study [Li and Ben-Dor, J. Appl. Phys. 80, 2027 (1996)] where the stability of steady flow reflection configurations was considered. As a result, it was found that Mach reflection wave configurations are stable inside the dual solution domain, although, based on the state of the art when this study started, they were considered not to be stable. Consequently, a new general transition criterion from regular to Mach reflection was proposed. With the aid of this criterion the domains of regular, direct-Mach and stationary-Mach reflections, in the domain of the incident shock-wave Mach number and the reflecting wedge angle, were reestablished. All the analytical findings were supported by experimental results from different sources. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363097
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  • 9
    Electronic Resource
    Electronic Resource
    Transport property of Si/Si1−xGex/Si p-type modulation doped double heterostructure (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2544-2546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High mobility Si/Si1−xGex/Si p-type modulation-doped double heterostructures with Ge fractions of 0.2, 0.25, 0.3 have been grown by rapid thermal process/very low pressure-chemical vapor deposition. Hole Hall mobilities as high as ∼300 cm2/V s (at 293 K and sheet carrier concentration of ∼2.6×1013 cm−2) and ∼8400 cm2/V s (at 77 K and sheet carrier concentration of ∼1.2×1013 cm−2) have been obtained for heterostructures with x=0.3. The variation of hole mobility with temperature and the influence of the Ge fraction on hole mobility were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357569
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  • 10
    Electronic Resource
    Electronic Resource
    Salt effects on histone IV conformation (1972)
    s.l. : American Chemical Society
    Biochemistry 11 (1972), S. 2952-2957 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00766a005
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