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  • 1
    Electronic Resource
    Electronic Resource
    Effects of stressed materials on the radial sensitivity function of a quartz crystal microbalance (1982)
    s.l. : American Chemical Society
    Analytical chemistry 54 (1982), S. 2341-2343 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00250a045
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of magnetic anisotropies in ultrathin films by magnetometry in situ in UHV (invited) : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5764-5768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic anisotropies of Ni(111) films on Re(0001) and Fe(110) films on W(110) were analyzed using torsion oscillating magnetometry in UHV. They can be decomposed in volume contributions that are independent of thickness and surface state and can be explained as a superposition of shape, magnetocrystalline and residual strain anisotropies, and surface contributions, which scale with 1/d and depend sensitively on the state of the surface. Néel's phenomenological anisotropy model provides a useful connection between different components of surface anisotropies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350155
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  • 3
    Electronic Resource
    Electronic Resource
    Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2000-2005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study radiative and nonradiative recombination at individual dislocations in GaN by cathodoluminescence performed in a transmission electron microscope. The dislocations are produced by indentation of dislocation free single crystals and have a-type Burgers vectors (b=1/3〈112¯0〉). They are aligned along 〈112¯0〉 directions in the basal plane. Our direct correlation between structural and optical properties on a microscopic scale yields two main results: (i) 60°-basal plane dislocations show radiative recombination at 2.9 eV; (ii) screw-type basal plane dislocations act as nonradiative recombination centers. We explain the nonradiative recombination by splitting this dislocation into 30° partials that have dangling bonds in the core. The dissociation width of these dislocations is 〈2 nm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490618
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  • 4
    Electronic Resource
    Electronic Resource
    Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3792-3798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a method that solves the problem of the independent determination of the indium and nitrogen concentrations in a strained quaternary InGaAsN superlattice. The method is experimentally based on the simultaneous measurement: (i) of the tetragonal lattice distortion of the unit cell from high resolution micrographs and (ii) of the intensity of the chemically sensitive (002) reflection from dark field images. As an example, we evaluate InGaAsN quantum wells with a nominal N concentration of 1.7% and with In concentrations of 10%, 20%, or 35%. We reveal local fluctuations of the In and N concentrations over distances down to 4 nm with a sensitivity of 0.1% for N and 1% for In fluctuations in this distance range. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402139
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  • 5
    Electronic Resource
    Electronic Resource
    Six-circle diffractometer for surface diffraction using an in-vacuum x-ray detector (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3239-3243 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report on the design of a diffractometer, which offers improved capabilities for x-ray experiments in ultrahigh vacuum. Its main features are (i) the possibility to follow the evolution of diffraction spots in situ during adsorption or film deposition; (ii) the measurement of reflections at high exit angles, i.e., large perpendicular momentum transfer. This goal is achieved by placing a movable x-ray detector inside the vacuum chamber. (iii) Other surface analysis equipment, e.g., a low-energy electron diffraction or an electron energy analyzer can be moved in front of the sample and operated simultaneously with x-ray diffraction. (iv) A load lock system—currently in preparation—will allow the quick exchange of samples without breaking system vacuum. In addition, a new design of the chi circle used for sample alignment provides a compact, space-saving design of the diffractometer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149899
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  • 6
    Electronic Resource
    Electronic Resource
    Surface ripples, crosshatch pattern, and dislocation formation: Cooperating mechanisms in lattice mismatch relaxation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1232-1234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the interplay of elastic and plastic strain relaxation of SiGe/Si(001). We show that the formation of crosshatch patterns is the result of a strain relaxation process that essentially consists of four subsequent stages: (i) elastic strain relaxation by surface ripple formation; (ii) nucleation of dislocations at the rim of the substrate followed by dislocation glide and deposition of a misfit dislocation at the interface; (iii) a locally enhanced growth rate at the strain relaxed surface above the misfit dislocations that results in ridge formation. These ridges then form a crosshatch pattern that relax strain elastically. (iv) Preferred nucleation and multiplication of dislocations in the troughs of the crosshatch pattern due to strain concentration. The preferred formation of dislocations again results in locally enhanced growth rates in the trough and thus leads to smoothing of the growth surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115017
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrafast broadband frequency modulation of a continuous wave reflectometry system to measure density profiles on ASDEX Upgrade (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4138-4145 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A reflectometry system has been developed for ASDEX Upgrade to measure the plasma profile from the scrape-off layer until the bulk plasma, simultaneously at the high and low field sides. Unique features of the system are the ultrafast broadband frequency modulation of a continuous wave using solid state stable hyper abrupt tuned oscillators (down to 10 μs), high and low field side channels and fully remote control operation, via optical fiber links. Due to the special design of the transmission line, with decoupled in going and out going lines and one-antenna configuration, the system is optimized for reception and spurious reflections are eliminated. The ultrafast operation guarantees that the effect of plasma turbulence is greatly reduced. Both features determine the high performance of the diagnostic. A dedicated data acquisition system handles the large amounts of data generated by the broadband operation. Recent developments include the operation of new channels and an automatic and accurate frequency calibration circuit. Also, advanced digital signal processing techniques were applied to obtain density profiles with high spatial and temporal (20 μs) resolutions under turbulent plasma regions, e.g., the scrape-off layer. Experimental results are presented showing the great sensitivity of the diagnostic to plasma radial movements and its tolerance to vertical movements of the plasma. Density profiles measured in ELMy regimes illustrate the capabilities of the diagnostic to detect fast profile changes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147517
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  • 8
    Electronic Resource
    Electronic Resource
    Dislocation glide in {110} planes in semiconductors with diamond or zinc-blende structure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2206-2208 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation of the secondary a/2〈110〉{110} glide systems as observed by transmission electron microscopy in epitaxial Ge(Si) and InGaAs layers grown on comparatively highly misfitting substrates, is rationalized in terms of a mechanical equilibrium analysis that includes a frictional force on the gliding dislocations. The conditions for occurrence of further secondary glide planes, such as {113} and {100}, are outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109443
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  • 9
    Electronic Resource
    Electronic Resource
    Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron-diffraction measurements (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3617-3619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present calculations by three-dimensional finite element method and measurements by convergent beam electron diffraction of the displacement field resulting from misfitting Ge0.85Si0.25 islands on Si(001). A good agreement between the results of both methods indicates that the three-dimensional finite element method is a reliable tool to calculate the strain, and thus the stress field, in such nanostructures. As a result both methods show that the substrate substantially takes part in the elastic relaxation process in such heteroepitaxial systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111217
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  • 10
    Electronic Resource
    Electronic Resource
    Reduced effective misfit in laterally limited structures such as epitaxial islands (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 574-576 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical finite element calculations have been reported to determine a correction function Φ that describes the reduction of the misfit that occurs when laterally limited structures such as faceted islands or mesa structures are grown on a substrate. The reduction of the average strain energy density is calculated in these three-dimensional islands and compared to the constant strain energy density in a continuous layer. Ratios Φ are obtained from the calculation of different island geometries, i.e., different facet angles γ and different aspect ratios island width l to island height h. These discrete values are fitted by a function which can easily be applied to the full range of aspect ratios (l/h(approximately-greater-than)0) and facet angles (0°〈γ〈90°). Faceted Ge(Si) islands on Si(001) substrate, grown from the solution in the Stranski–Krastanov growth mode, serve as an example for the calculation. Experimental and theoretical values for the critical thickness of these islands agree well. This result demonstrates the drastic influence of islanding on misfit strain distribution in island and substrate as well and, consequently, on the strong increase of the critical thickness as determined by the mechanical equilibrium theory of Matthews and Blakeslee. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114017
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