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  • 1
    Electronic Resource
    Electronic Resource
    The thermal diffusivity tensor and lattice dynamics of β-oxygen at high pressure (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 5424-5428 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An experimental approach to the study of thermal transport in the diamond-anvil high pressure cell is described and the elements of the thermal diffusivity tensor of β-oxygen are reported to a pressure of 9 GPa. The anisotropy in the thermal conductivity is found to be opposite in sense to that in the velocity of acoustic waves. Results are interpreted in terms of a lattice dynamical model in which the strong interactions between an atom and its first-, second-, and third-nearest neighbors are treated in tensorial form with parameters evaluated directly from experiment. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471775
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  • 2
    Electronic Resource
    Electronic Resource
    Some Granular Carbonaceous Adsorbents for Sugar Refining - A Study of Bone Char Replacements Based on Hydroxyapatite (1951)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 43 (1951), S. 639-654 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50495a026
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  • 3
    Electronic Resource
    Electronic Resource
    Antibiotics (1952)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 44 (1952), S. 468-472 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50507a016
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  • 4
    Electronic Resource
    Electronic Resource
    Ion implantation damage and annealing in InAs, GaSb, and GaP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 629-636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of ion implantation induced damage in InAs, GaSb, and GaP, and its removal by rapid thermal annealing have been investigated by Rutherford backscattering and transmission electron microscopy. There is relatively poor regrowth of these materials if they were amorphized during the implantation, leaving significant densities of dislocation loops, microtwins, and in the case of GaSb, polycrystalline material. For implant doses below the amorphization threshold, rapid annealing produces good recovery of the lattice disorder, with backscattering yields similar to unimplanted material. The redistribution of the implanted acceptor Mg is quite marked in all three semiconductors, whereas the donor Si shows no measurable motion after annealing of InAs or GaP. In GaSb, however, where it appears to predominantly occupy the group III site, it shows redistribution similar to that of Mg.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341952
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  • 5
    Electronic Resource
    Electronic Resource
    Thickness dependence of material quality in GaAs-on-Si grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 775-783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution with increasing layer thickness of the structural and electrical properties of GaAs grown directly on Si or Si-on-insulator (SOI) by metalorganic chemical vapor deposition is reported. There is a substantial improvement in the surface morphology and near-surface crystallinity of the GaAs in thicker films (≥1.5 μm). The implant activation efficiency of 60-keV 29Si ions at a thickness of 4 μm is comparable to that seen in bulk GaAs. The deep level concentration is also observed to decrease with increasing layer thickness. Transmission electron microscopy reveals average defect densities near 108 cm−2 in films deposited either on misoriented or exact (100) Si, and in those grown on SOI.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341141
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  • 6
    Electronic Resource
    Electronic Resource
    High-speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2609-2612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trichloride vapor-phase epitaxy has been employed in a single chamber reactor to achieve the continuous (noninterrupted) growth of n−InP/n−In0.53Ga0.47As/InP superlattice structures for avalanche photodetector applications. Very low background doping has been achieved in both the InP (n≈1×1014 cm−3) and the superlattice layers (n=1×1015 cm−3). We report the details of the epitaxial crystal growth as well as analysis of the structures by secondary ion mass spectrometry and transmission electron microscopy. Avalanche photodiodes have been fabricated by Zn diffusion in the InP layer and mesa etching. The devices exhibit an intrinsic response time (full width at half maximum) of 66 ps at λ=1.5 μm which is the shortest so far achieved in superlattice photodetectors. Dark currents of 50 nA at unity gain, multiplication factors of 6, and breakdown voltages exceeding −120 V have been measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337129
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  • 7
    Electronic Resource
    Electronic Resource
    Hugoniot data for iron (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5496-5498 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A definitive set of the Los Alamos Hugoniot data for iron in a pressure regime extending to 442 GPa is given. Earlier standards data, obtained using conventional explosive systems, were thoroughly reprocessed. All original film records were reread. On the basis of more recent experiment and theory, some data were culled because the experimental designs were found to be insufficiently conservative. The analysis was also modified to take into account preheating of the explosively driven flyer plates. Minor clerical errors in transcription of measurements were corrected. An improved algorithm for the flash-gap time correction was incorporated. Higher-pressure data were obtained using a conventional 13-pin target assembly on a two-stage light gas gun. Several polynomial representations of the data are given. A linear fit to the data (Us=3.935+1.578 Up, where the shock velocity Us and the particle velocity Up are in km/s) has a root-mean-square misfit of 62 m/s. The quadratic fit (Us=3.691+1.788 Up−0.038 Up2) has a root-mean-square misfit of 39 m/s. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319320
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  • 8
    Electronic Resource
    Electronic Resource
    Calibration of Sm:YAG as an alternate high-pressure scale (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5357-5359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure-induced wavelength shift of a laser-excited fluorescence in samarium-doped yttrium aluminum garnet (Sm:YAG) was compared with that of ruby to 26 GPa at room temperature. Because the fluorescence wavelength for Sm:YAG has a negligible temperature dependence, it provides a better pressure scale for diamond anvil cell applications than ruby under high-temperature conditions. However, the overall intensity of the Sm:YAG fluorescence is less than that for ruby. A Gaussian–Lorentzian profile was chosen to analyze the fluorescence spectra. The Sm:YAG fluorescence wavelength exhibits an approximately linear pressure dependence (3.07±0.45 A(ring)/GPa) only to 20 GPa at room temperature. A polynomial fit for all data to 26 GPa gives P(GPa)=−10 280(λ/λ0−1)2 +2085(λ/λ0−1), with a rms misfit of 0.14 GPa.〈squeeze〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347031
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  • 9
    Electronic Resource
    Electronic Resource
    Perturbed rotational structure in the 18 373 cm−1 band of the fluorescence excitation spectrum of jet-cooled chromyl fluoride (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 2423-2428 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The 18 373 cm−1 band in the fluorescence excitation spectrum of jet-cooled CrO2F2 has been recorded with 0.007 cm−1 linewidth. The stronger lines have been assigned to a type c transition, consistent with a B1←A1 vibronic transition analogous to that in CrO2Cl2. Ground-state rotational constants, A″=0.148, B″=0.130, and C″=0.120 cm−1, agree well with electron diffraction predictions. The B1 excited state is significantly perturbed. Evidence includes (i) a decreasing fluorescence yield with increasing J′, such that signals were not observed for J′〉3, (ii) the appearance of "extra'' lines in the spectrum, leading to perturbing levels strongly mixed with levels of the B1 state, and (iii) anomalous effective rotational constants for the B1 state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451099
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  • 10
    Electronic Resource
    Electronic Resource
    Far infrared laser magnetic resonance detection of NH and ND (a 1Δ) (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 324-330 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rotational spectra of the excited a 1Δ state of NH and ND have been observed by far infrared laser magnetic resonance spectroscopy. For ND(a 1Δ) the spectroscopic constants are B0=264 750.263(30) MHz, D0=14.383 83(91) MHz, aN =109.63(22) MHz, aD =11.03(23) MHz, eqQ(N)=−4.0(15) MHz, gr=−0.000 86(10), and gL =1.000 506(17). For NH (a 1Δ), the constants are B0=493 043.182(95) MHz, D0=50.453 MHz (constrained in fit), aN =109.65(85) MHz, aH =70.9(14) MHz, eqQ(N)=−4.0 MHz (constrained in fit), gr =−0.001 58(6), and gL =1.001 03 (constrained in fit). Aspects of the electronic structure of the radical as revealed by the magnetic hyperfine constants are discussed in relation to those of chemically similar systems. The Zeeman parameters are interpreted in terms of mixing of the a 1Δ state with the c 1Π state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451659
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