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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 9 (1993), S. 3635-3639 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of natural products 58 (1995), S. 68-73 
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2355-2357 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Pohang Light Source (PLS) Project is now in its final year of the construction phase. The machine consists of a full energy (2 GeV) linear accelerator injector, a storage ring with a 12-period TBA structure, and 32 eventual beamlines from insertion devices and bending magnets. The commissioning of the injector linac was completed in June 1994. The overall commissioning of the PLS is expected to be completed by the end of 1994. The facility will provide high brightness, tunable radiation in a wide spectral range up to 30 keV of photon energy, and will serve national and international users starting in mid-1995. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 364-369 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of the ZnSe/GaAs heterostructure have been investigated using the acoustoelectric voltage spectroscopy technique, and in particular, the role of the high-resistivity ZnSe on the surface passivation of the GaAs substrate has been evaluated. From the transverse acoustoelectric voltage (TAV) spectra, the carrier type and concentration, energy band offsets, and the energy levels of various trap states at the heterostructure interface have been found. The effect of heterostructure epitaxial layer on the surface properties of GaAs has been studied by comparing the normalized changes in TAV amplitude for samples of various epitaxial layers and different thicknesses. From all these measurements, surface recombination velocities (S) have been evaluated. For the pseudomorphic ZnSe films (thickness ≤0.15 μm) on GaAs, a reduction in S has been found. As the thickness of the ZnSe film was increased, the presence of a large number of interface states due to the introduction of misfit dislocations was detected using TAV measurements.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7867-7868 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The chemical potential of the Stockmayer fluid is computed by the canonical ensemble Monte Carlo methods of Widom, Bennett, and Han. Both spherical cutoff and metallic Ewald sum techniques are employed. For the states studied it is found that the Ewald sum provides little improvement over the simpler spherical cutoff, that Bennett's and Han's methods produce essentially the same results, and that for certain states Widom's method is less accurate than Bennett's or Han's. The accuracy of the chemical potential calculated via the three methods was verified with Adams' version of the grand canonical ensemble Monte Carlo method.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 5167-5171 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new approach to the computation of chemical potential and free energy is presented. The basic idea is to correct the underestimate obtained by the particle-removal method. Application of the new technique to several different thermodynamic states of the Lennard-Jones (12,6) fluid shows that it is capable of providing reliable estimates of the chemical potential, even at high density where standard methods encounter computational difficulties.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3414-3416 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to enhance the efficiency of a blue-green laser through spectrum conversion of the pumping light, a converter dye BBQ was mixed in the laser dye solutions. The laser was pumped with a plasma radiation source. The increase of laser output over the maximum obtainable from the pure dye operation was better than 80% for the dye mixture of LD490+BBQ or coumarin 503+BBQ. The estimated enhancement calculated by a simple spectrum conversion model agrees well with the experimental results. The enhancement is mainly effected by irradiance in the UV from the pumping source, the fairly good match of the fluorescence band of converter dye with the absorption band of the laser dye, and the lack of the overlap of the fluorescence band of the laser dyes with the triplet–triplet absorption band of the converter dye used.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 49 (1977), S. 1829-1832 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4810-4815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation on the effects of oxygen mixing in the sputtering gas and rapid thermal annealing on the electrical properties of radio frequency sputtered silicon oxide films has been carried out. The conductivity of the oxide film decreases as the concentration of oxygen in the sputtering gas increases, and also for rapid thermal anneal temperatures higher than 900 °C. Transport mechanisms for films annealed for 50 and 200 s were found to be that of Schottky emission and space charge limited conduction, respectively. From the capacitance versus voltage measurements, it was concluded that the improvement in the oxide quality of the annealed films was not related to the reduction of the interface trapped charge density. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2308-2314 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the densification of radio frequency sputtered silicon oxide films by rapid thermal annealing was undertaken using both physical (etching, refractive index, and density calculation) and structural [infrared and x-ray photoelectron spectroscopy (XPS)] techniques. It was discovered that the etch rate of annealed films is reduced drastically, compared with as-deposited films and that the refractive index increases with increasing annealing temperature (Tp) or annealing time (tp). The film density also increases as Tp or tp increases and we conclude that annealed films have become denser as compared to the as-deposited films. We also suggest that increasing tp would be more efficient than raising Tp for film densification. Infrared spectrum analysis results show that with increasing Tp or tp, strain in the films has become more relaxed, and a significant amount of the surface hydroxyl groups in the annealed films was removed. The XPS analysis results show that a substantial amount of suboxide species exist within 30–40 Å of the oxide at the Si–SiO2 interface and that the Si–SiO2 interface is not abrupt. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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