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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1811-1817 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth kinetics of the N2O furnace oxynitridation process demonstrating the importance of input flow rate, and therefore gas residence time, in determining the final film thickness and the nitrogen concentration. This dependence on residence time can explain the variation in the tendency to thickness saturation observed in the film growth data reported by several groups. Using published gas phase kinetic data, we have shown that, for a 950 °C oxynitridation process, N2O decomposes into N2, O2, and NO before reaching the wafer load. Again using published information, we have derived a simple equation which describes the subsequent reaction between NO and O2 to produce NO2 as the gas flows down the tube. This reaction results in loss of NO by an amount which depends on the gas residence time and therefore on the input gas flow rate and the dimensions of the system. Since it can be argued that NO2 does not contribute to nitridation, this system-dependent loss of NO can explain the variation in the reported film growth data. Combining our experimental data and model, we find that the peak nitrogen concentration in the film depends linearly on the NO gas phase concentration. Further, the oxynitride grows more slowly as the NO concentration increases supporting the idea that oxidation sites are blocked by nitrogen as oxynitridation time increases.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4618-4624 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scaling of dry thermal oxides into the thin (〈400 A(ring)) range continues to motivate studies of the rapid initial oxidation rate of silicon unaccounted for by a linear-parabolic model. In this paper, silicon oxidation kinetics in this unresolved regime are studied by the incremental reoxidation of thin thermally grown and deposited silicon oxide layers on silicon. It is found that the reoxidation rates of thermally grown oxides in the thin regime rapidly decrease with increasing oxide thickness. In contrast, the reoxidation rates of deposited oxides are faster, and nearly thickness independent. It is also found that the reoxidation rates of thin thermal oxides can be significantly increased by inert thermal annealing. Existing thin-regime oxidation models are evaluated in light of these experimental findings, and it is concluded that only models invoking stress suppression of early oxidation kinetics can reconcile all experimental observations. In further support of a stress argument, the time and temperature effects of inert annealing are shown to be quantitatively consistent with a Maxwellian model for stress relaxation. Kinetic parameters extracted from experimental data are utilized to isolate specific mechanisms for the suppression of oxidation rate during the initial stages of silicon oxidation.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Immunology 22 (2004), S. 307-328 
    ISSN: 0732-0582
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Medicine
    Notes: Development of the acquired immune response is dependent on the signaling of CD40 by its ligand, CD154. These molecules govern both the magnitude and quality of humoral- and cell-mediated immunity. A litany of studies have conclusively documented that blockade of this ligand-receptor pair can prevent, and also intervene in, the progression of antibody- and cell-mediated autoimmune diseases, and can instill long-lived allogeneic and xenogeneic graft tolerance. Many effector mechanisms of inflammation are abolished as a result of CD154 blockade, but we are now beginning to understand that CD154 blockade may, in some instances, engender long-lived, antigen-specific tolerance. In the context of transplantation tolerance, we present a hypothesis that alphaCD154 blockade is most effective at inducing long-lived allospecific tolerance if anergy and regulation can be elicited prior to the onslaught of inflammation that is induced by grafting (preemptive tolerance). This facet of alphaCD154-induced tolerance appears to co-opt the normal processes of peripheral tolerance induced by immature DCs and can be exploited to induce long-lived antigen-specific tolerance. The underlying science and the prospects for inducing long-lived antigen-specific tolerance in a model of allograft tolerance through CD154 blockade are presented and discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 29 (1990), S. 82-89 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 662-667 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate by high-resolution electron microscopy studies that the breakup upon annealing of the once nearly continuous oxide in polysilicon/thin oxide/single-crystal silicon structures occurs by a process of nucleation and growth of oxide voids. A kinetic model is developed that assumes capillarity as a driving force and one-dimensional diffusion along the interface as a kinetic pathway. Detailed measurements of void radii (before coalescence) as a function of anneal time and temperature show an excellent fit of the model to experiment, confirming a linear dependence of void size with time and an Arrhenius dependence on temperature. Different activation energies are extracted for oxide void growth occurring in thick and thin oxides, suggesting two competing diffusion mechanisms are in effect. It is postulated that oxygen diffusion through both the oxide and the silicon above and underneath is taking place.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 4599-4603 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Convergent renormalized perturbation series for the Stark rotational energies of rigid polar diatomic molecules are presented. The small- and large-field expansions are considered and convergence for all field intensities is proved in both cases. Results are in excellent agreement with accurate numerical non- perturbative calculations.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 2812-2820 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A potential energy surface has been calculated for the competing associative and reactive ion–molecule processes involving the reactants C3H++H2. Our ab initio results show that the linear ion C3H+ and H2 can directly access the deep potential well of the propargyl ion H2CCCH+, which is calculated to lie 390 kJ mol−1 below the zero-point energy of the reactants. Isomerization between the propargyl ion and the lower energy, cyclic C3H3+ ion, calculated to lie 501 kJ mol−1 below the zero-point energy of reactants, can subsequently occur via two pathways. One of these pathways involves a transition state lying 22 kJ mol−1 below the energy of the reactants while the other, which occurs at much lower energies, involves two transition states and an intermediate. The dissociation of c-C3H3+ into c-C3H2++H is calculated to occur directly, without any intermediate potential energy maximum, but the energy of the products lies 7.3 kJ mol−1 above the energy of the reactants. Using the minimum energy potential pathway and properties of the stationary point structures determined via ab initio methods, we have calculated both the association rate coefficient to produce C3H3+ as a function of density and the branching ratio between the propargyl and cyclic structures of the ion. Our results are in good agreement with some experimental results and in conflict with others. Specifically, we agree with the 1:1 branching ratio measured for the propargyl and cyclic isomers of C3H3+ at 80 and 300 K and we agree with the rate coefficient for radiative association measured at 80 K. We cannot reproduce reported measurements that the reactive channel (C3H2++H) is the dominant channel at 80 K and at low gas densities, or that the association channel at high densities saturates at an effective rate coefficient well below the Langevin value −2×10−11 cm3 s−1 at 300 K and 1×10−10 cm3 s−1 at 80 K.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 974-987 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Complete harmonic force fields have been calculated for the ground state (S0) and the first excited singlet state (S1) of naphthalene using the multiconfiguration self-consistent field (MCSCF) approach. Identical calculations were performed for benzene to test the methodology with already available theoretical and empirical force fields. Two different basis sets were applied (STO-3G and near double-zeta) and all π-orbitals included in the active space. The geometries of ground and excited states were separately optimized. Following the ideas of Pulay, the force constants were scaled before calculating frequencies and normal modes. For the ground states the influence of correlation is discussed by comparison with Pulay's results. Except for special vibrations where correlation effects turn out to be important, the use of Pulay's scaling factors leads to a satisfactory description of the in-plane-vibrations. In the case of benzene the calculated frequency shifts between S0 and S1 are in complete qualitative agreement with experimental observations. In the case of naphthalene the new theoretical results suggest several revisions of earlier empirical assignments.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 1491-1497 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A sufficient condition to relate the general solutions of two different bidimensional problems, both in classical and quantum mechanics, is found. The point transformation, as well as the explicit construction of the related potentials, is presented. The procedure is then used in geometrical optics, the vibrating membrane, and other physical systems in two dimensions. Several examples and applications are worked out.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 142-146 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: This work starts with classical equations of motion and sets very general quantization conditions (commutation relations). It is proved that these conditions imply that the equations of motion are equivalent to the Euler–Lagrange equations of a Lagrangian L. The result is a generalization of work by Feynman, recently reported by Dyson [Am. J. Phys. 58, 209–211 (1990)]. The Lagrangian L need not be unique. Examples are given, including classical equations that do not come from a Lagrangian and therefore cannot be quantized consistently.
    Type of Medium: Electronic Resource
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