Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    The role of hydrogen in excimer-laser-induced damage of fused silica (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2809-2815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen nuclear magnetic resonance (NMR) was used to probe defect reactions in fused silica during 193 nm ultraviolet irradiation and thermal treatment. Hydrogen concentration and Carr–Purcell measurements indicate that the majority of hydrogen atoms are isolated and do not segregate or evolve from the fused silica during annealing or irradiation. Previously, NMR spin-lattice relaxation measurements have revealed that a small fraction of hydrogen in fused silica exists as centers that undergo molecular motion and are consumed during annealing. Here, a detailed analysis of the NMR spin-lattice relaxation behavior is used to support the identification of this center as a pair of adjacent silanol groups. These silanol pairs react during annealing to form a strained bond, thus increasing the susceptibility of fused silica to E' formation. Excimer laser irradiation, like thermal treatment, is shown to directly reduce the number of relaxation centers in the material. The measured dependence of spin-lattice relaxation as a function of irradiation for identically prepared samples is consistent with silanol pair center consumption by a two-photon process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353057
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Electrical, crystallographic, and optical properties of ArF laser modified diamond surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2295-2297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulses of 193 nm radiation from an ArF laser with energies exceeding 0.5 J/cm2 have been shown to modify 40–60 nm thick layers of {100} and {110} oriented diamond surfaces. These layers exhibit highly anisotropic electrical and optical properties which have principal in-plane axes along the 〈110〉 directions. The minimum resistance is (4–10)×10−4 Ω cm, and minimum in the optical transmittance and maximum in the reflectance occur when the electric field vector of the incident polarized light is aligned along the low resistance direction. Transmission electron microscopy indicates that the modified layer primarily consists of unidentified graphite-like carbon phases embedded in diamond. The first-order electron diffraction spots correspond to lattice spacings of 0.123, 0.305, and 0.334 nm. The modified layer is stable at 1800 °C, forms ohmic contacts to type IIb diamond, and supports epitaxial diamond growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102042
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effects of excimer laser irradiation on the transmission, index of refraction, and density of ultraviolet grade fused silica (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1276-1278 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation-induced changes in high-purity fused silica during prolonged irradiation with a pulsed laser at 193 nm have been studied. Radiolytically induced UV absorption bands, an increase in index of refraction, and stress birefringence are observed. The formation mechanisms are analyzed in terms of radiolytic atomic rearrangement of a-SiO2 initiated by two-photon absorption. The quantum efficiency for the formation of E' point defects per pair of absorbed 193 nm photons has been determined to be ∼7.5×10−4; matrix compaction, as high as a few parts in 10−5, is identified as the source of the birefringence and index change. It has been further observed that E' centers can be photobleached.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102471
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Selective area laser photodeposition of transparent conductive SnO2 films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1631-1633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of SnO2 films has been demonstrated using an ArF (193 nm) excimer laser to drive the photochemical reactions of mixed SnCl4 and N2 O vapors. Without any annealing, films 100 nm thick grown on room-temperature substrates have resistivities as low as 0.04 Ω cm. The optical band gap of 3.20 eV and transmission cutoff wavelength of 330 nm compare favorably with the best films obtained using alternate higher temperature techniques. Subsequent annealing does not increase the film's conductivity. Selective area growth of 10-μm-wide lines has been performed using proximity printing. The maximum temperature excursion during the laser pulse is estimated to be 300–400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101395
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Reversible laser chemically induced phase transformations in thin-film Ba2YCu3Ox superconductors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 404-406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase transformations of a thin film of Ba2YCu3Ox were induced with a focused laser beam in chemical ambients. The transformations, involving superconductive and nonsuperconductive phases, are achieved rapidly and with a high degree of spatial control. They are fully reversible, and the appropriate processing parameters have been studied. These effects are interpreted within present models, which relate the superconducting properties of Ba2YCu3Ox to its oxygen content and crystalline structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99452
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Low-temperature laser deposition of tungsten by silane- and disilane-assisted reactions (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1072-1074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reaction, based on tungsten hexafluoride chemically reduced by silicon hydride vapors, has been developed for low-temperature laser deposition of high-purity tungsten. Compared to previous tungsten deposition methods, the new (pyrolytic) process requires very little thermal energy for initiation and propagation of the scanned reaction. WF6 and SiH4 (or Si2H6) mixtures have been optimized to yield tungsten interconnect lines with abrupt square cross section and conductivities of 12–25 μΩ cm. Impurity levels are below the detection limits of Auger spectroscopy. Lines 3–20 μm in width and 0.1–4 μm in thickness are written at scan speeds of ∼100 μm/s. Argon-ion laser powers (488 nm) are typically 30–60 mW, corresponding to reaction temperatures sufficiently low for direct writing on polyimide dielectrics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102569
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Three-dimensional metallodielectric photonic crystals exhibiting resonant infrared stop bands (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2937-2939 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using standard microelectronic techniques, we have fabricated arrays of infrared metallodielectric photonic crystals (IR MDPCs) on silicon substrates. The metallic "atoms" are located on a three-dimensional (100)-oriented face-centered-cubic lattice. Resonant stop-band characteristics have been measured with rejection levels of up to 20 dB and widths of up to 83% of the center frequency. We demonstrate structures with stop bands across the midinfrared wavelength range from 2 to 12 μm. Angular studies of the photonic stop bands show an insensitivity to incident angle for some of the structures. The IR MDPC results are compared with measurements made on microwave-scale MDPC structures to help in understanding the infrared results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118749
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Patterning of sub-50 nm dense features with space-invariant 157 nm interference lithography (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3149-3151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have implemented a space-invariant interference lithography tool for 157 nm F2 lasers, capable of creating dense line and space patterns with a spatial period of 91 nm. No gratings or curved optics are required, allowing a simple and inexpensive tool for resist and process development at 157 nm. Initial patterning of several commercial and experimental resists has resulted in high contrast features with little line edge roughness and good cross-sectional profiles, indicating that the fundamental performance of acid-catalyzed resists patterned at 157 nm may meet lithography requirements for sub-50 nm features. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326490
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Observation of a nanocrystalline-to-amorphous phase transition in luminescent porous silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1766-1768 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline silicon aggregates imbedded in a predominantly amorphous silicon layer have been observed in anodically etched p-Si(100) by using valence band x-ray photoelectron spectroscopy and lattice imaged high-resolution transmission electron microscopy (XTEM). XTEM has identified the as-prepared porous silicon to be a mixed phase of amorphous and nanocrystalline silicon, with the nanocrystalline aggregates being randomly dispersed throughout the full thickness of a 1 μm thick amorphous layer and exhibiting a size distribution from 2 to 5 nm in diameter. The abundance of the nanocrystalline aggregates seems to decrease as the anodic etching proceeds and as the sample is irradiated by x rays at room temperature in ultrahigh vacuum. Valence band photoelectron measurements show evidence for a crystalline-to-amorphous phase transition induced by x radiation which may, in part, be activated by photoelectron stimulated hydrogen desorption. The x-ray irradiated samples also exhibit a significant reduction in photoluminescence yield, possibly caused by a reduction in the density of nanocrystallites. The observed mixed phase porous silicon and the metastability of the nanocrystallites help to explain apparent contradictory descriptions of the nature of porous silicon. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114376
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Excimer-laser-induced sub-0.5-μm patterning of WO3 thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1790-1792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous WO3 thin films have been deposited in a plasma-enhanced chemical vapor deposition system, and were patterned with a 193-nm excimer laser (one pulse, 10–25 mJ/cm2). Negative-tone, sub-0.5-μm lines and spaces were obtained following dry development in a low-power CF4 plasma. The mechanism for laser-induced etch selectivity was studied with angle-resolved x-ray photoelectron spectroscopy. It was inferred from the fluorine photoelectron spectra that the laser induces atomic rearrangements that impede the etch process initiated by fluorine-containing radicals. A possible interpretation is that the rearrangements, which may be partially thermally activated, reduce the volume of the microvoids present in WO3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106202
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...