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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4382-4385 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(001) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of γ-FeSi2, α-FeSi2, and β-FeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the γ-α and α-β phase transitions were determined as ≈11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4686-4694 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: FeSi2 precipitates were produced in Si(001) wafers by an ion-beam induced epitaxial crystallization process and subsequently annealed at temperatures in the range 650–900 °C. The resulting precipitate coarsening and phase transition were studied by transmission electron microscopy. The coarsening process basically involves the evolution of plate-shaped precipitates. The lengthening rate of the precipitates is considerably greater than the thickening rate, because the two broad faces of a plate are coherent or semicoherent, while the plate edges are incoherent. The lengthening kinetics was shown to be volume-diffusion controlled and obey a cube power law. The corresponding activation energy was determined to be 3.55 eV, in excellent agreement with the value predicted by the classical Ostwald ripening model. In contrast, we demonstrated that the thickening process is interface controlled, which involves the migration of the interfaces via a ledge mechanism. Accordingly, an apparent activation energy of 2.18 eV was obtained. The precipitate coarsening is accompanied by phase transitions. Upon annealing at 650 °C, it was observed that γ-FeSi2 precipitates tend to transform from a fully aligned (A-type) to a twinned (B-type) orientation with respect to the Si matrix. For higher temperature anneals, nearly all the precipitates transform from the γ phase into the β phase, except those having a relatively small diameter (〈≈5 nm) which remain as A-type γ-FeSi2. These observations suggest that the phase transition of FeSi2 is size dependent. This can be understood, in terms of the interfacial energy versus the volume free energy of a precipitate as a function of precipitate size.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 752-762 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The epitaxial growth of FeSi2 silicides was studied by using ion-beam epitaxial crystallization (IBIEC) of Fe-implanted Si(001) samples. By employing Rutherford backscattering/channeling spectrometry and transmission electron microscopy it was possible to determine that the IBIEC process produces a γ-, α-, and β-FeSi2 phase sequence, with increasing Fe concentration along the implantation profile. The critical concentrations for γ→α and α→β phase transitions are 11 and 21 at. %, respectively. A study of the thermal behavior of these phases shows that the γ- and α-FeSi2 are metastable with respect to the β-FeSi2 phase. The γ to β-FeSi2 transition starts at 700 °C via an Ostwald ripening process. In addition a 800 °C, 1 h anneal of high Fe concentration samples produces a complete α and γ to β-FeSi2 transformation. Finally, it is demonstrated that a regular or a rapid thermal annealing on Fe-implanted Si samples induces only the formation of a β-FeSi2 phase. © 1996 American Institute of Physics.
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6514-6519 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Formation of bulk metallic glass in quaternary Ti–Zr–Cu–Ni alloys by relatively slow cooling from the melt is reported. Thick strips of metallic glass were obtained by the method of metal mold casting. The glass forming ability of the quaternary alloys exceeds that of binary or ternary alloys containing the same elements due to the complexity of the system. The best glass forming alloys such as Ti34Zr11Cu47Ni8 can be cast to at least 4-mm-thick amorphous strips. The critical cooling rate for glass formation is of the order of 250 K/s or less, at least two orders of magnitude lower than that of the best ternary alloys. The glass transition, crystallization, and melting behavior of the alloys were studied by differential scanning calorimetry. The amorphous alloys exhibit a significant undercooled liquid region between the glass transition and first crystallization event. The glass forming ability of these alloys, as determined by the critical cooling rate, exceeds what is expected based on the reduced glass transition temperature. It is also found that the glass forming ability for alloys of similar reduced glass transition temperature can differ by two orders of magnitude as defined by critical cooling rates. The origins of the difference in glass forming ability of the alloys are discussed. It is found that when large composition redistribution accompanies crystallization, glass formation is enhanced. The excellent glass forming ability of alloys such as Ti34Zr11Cu47Ni8 is a result of simultaneously minimizing the nucleation rate of the competing crystalline phases. The ternary/quaternary Laves phase (MgZn2 type) shows the greatest ease of nucleation and plays a key role in determining the optimum compositions for glass formation. © 1995 American Institute of Physics.
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6543-6545 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structural and magnetic properties of sputtered Fe/Fe-O films were studied by x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy, transmission electron microscopy, and superconducting quantum interference device. XPS studies showed the presence of FeO and Fe2O3 on the surface of as-made samples. Microstructure studies showed a uniform nanostructure with the grain size in the range of 50–150 A(ring) with smaller grains corresponding to thinner films. The coercivity at 10 K was found to increase substantially with decreasing film thickness below 60 A(ring). A high Hc (2.7 kOe) was observed in samples with a thickness about 20 A(ring). Magnetization curves showed a planar anisotropy with a shifted hysteresis loop characteristic of an exchange anisotropy between the Fe and Fe-O coating. The coercivity was found to drop steeply with increasing temperature. This may be attributed to the superparamagnetic behavior of the Fe-O surface layer.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6676-6678 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The magnetic and structural properties of Co/CoO bilayers prepared by sputtering have been studied in films with Co thickness in the range of 65 to 250 A(ring). A two-phase structure consisting of hcp Co and fcc CoO was observed in the films. The coercivity was found to change inversely proportional to the Co thickness and to the sputtering rate. The highest Hc (9 kOe) was obtained in films exposed to ambient conditions for long periods of time. A shift in the hysteresis loop was found in field-cooled samples, indicating a strong exchange coupling between the Co and CoO phases.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2699-2701 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Both the hexagonal and cubic GaN phases were synthesized in GaAs (001) by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.5×1017 cm−2, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 3×1017 cm−2, a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced. © 1995 American Institute of Physics.
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2215-2217 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Doping of the nanocrystalline-Si/SiO2 composite material with tungsten results in a quenching of the "red'' photoluminescence (PL) and an appearance of an intense blue/violet one with a spectral maximum around 2.8 eV and decay time of ≤3 ns. Unlike the green/blue PL from silanol groups, this PL is stable upon annealing and does not show any polarization memory. A possible mechanism of this PL is suggested. © 1995 American Institute of Physics.
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  • 9
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Inorganic chemistry 26 (1987), S. 830-836 
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3745-3749 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A miniature electron-beam evaporator (MEBE) has been fabricated and adapted to our ultrahigh-vacuum atom-probe field-ion microscope (APFIM). The MEBE allows for in situ vapor deposition−under ultrahigh-vacuum conditions ( 〈 4 × 10−10 Torr)−of a wide range of elements, on the surface of an atomically clean FIM specimen; the surface is prepared via the field-evaporation process. The deposition rate of an evaporant from the MEBE is calibrated to give an accurate value of this quantity. Examples of the deposition−at ≈0.3 nm min−1− of silicon or titanium on tungsten FIM specimens are presented. And in the case of a Ti/W couple it is demonstrated that an interface between a tungsten substrate and a titanium overlayer is chemically sharp on an atomic scale; the titanium was vapor deposited at a substrate temperature of 77 K. Also a 20-kV electron-beam gun was adapted to our APFIM. This gun is useful for in situ electron-beam heating of bilayer couples, or the introduction of point defects in metal oxide or semiconductor overlayers via electronic mechanisms.
    Materialart: Digitale Medien
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