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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    BBA Section Nucleic Acids And Protein Synthesis 119 (1966), S. 84-91 
    ISSN: 0005-2787
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0031-9422
    Keywords: Ganoderma applanatum ; Polyporaceae ; anti-tumour promoters. ; applanoxidic acids A, B, C and D ; triterpenes
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Tetrahedron: Asymmetry 4 (1993), S. 2290-2294 
    ISSN: 0957-4166
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Tetrahedron: Asymmetry 5 (1994), S. 1427-1430 
    ISSN: 0957-4166
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2543-2549 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies have been carried out to characterize hydrogenated amorphous silicon prepared by alternatively repeating chemical-vapor deposition (CVD) from disilane and hydrogen plasma (HP) treatment (referred to as HP treated CVD a-Si:H). It has been found that hydrogen plasma treatment induces structural relaxation of Si network in addition to the passivation of Si dangling bonds. Two types of defect states with different Gaussian energy distribution exist in this material, and this type of distribution has been found to be common in undoped a-Si:H prepared by a variety of methods. High film quality, i.e., a low defect density (〈1016 cm−3) and a fairly long ambipolar diffusion length (0.12 μm), and significant reduction of light-induced changes have been simultaneously achieved in HP treated CVD a-Si:H. Steady state transport of electrons and holes under illumination are controlled by the states other than neutral Si dangling bond state (D0). The behavior of these states with long exposure to light is different from that of D0.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4344-4353 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies by means of a constant photocurrent method (CPM) have been carried out on the deep defect states in undoped hydrogenated amorphous silicon (a-Si:H). Assuming Gaussian energy distributions, two types of defect states (ST1 and ST2) have been found from careful analysis of CPM spectra; one of these states (ST1) is a neutral Si dangling-bond (Si D0) state, and the other (ST2) is a negatively charged dangling-bond-like defect state located in the lower gap. ST2 lies deeper in energy by 0.1 eV, and has a narrower full width at half-maximum (FWHM) when compared with ST1. Possible candidates for ST2 have been discussed by referring to the previous models of defects in a-Si:H. The FWHM of ST1 (the Si D0 state) does not always depend on the overall structural disorder estimated from Raman spectra. The energy position of the Si D0 state measured from the valence-band edge is almost independent of the optical band gap. Long exposure to light increases the density of ST1 (the Si D0 state) and decreases that of ST2, which suggests that defect conversion proceeds during the illumination.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7924-7931 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH4 as the source of carbon and with different nitrogen flow rates (N2/CH4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp2-bonded carbon or a change in sp2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5252-5256 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For plasma-assisted processing of future semiconductor devices, a new compact electron cyclotron resonance (ECR) plasma source has been specifically designed. The source is novel in that the magnets required for the production of ECR plasma are movable even in vacuum, and in situ monitoring of the discharge zone is also possible. Typical plasma characteristics were evaluated for nitrogen gas using Langmuir probe diagnostics and ion energy analysis. The measured plasma parameters include electron densities in excess of 1010 cm−3 and low ion energies (〈30 eV) with narrow distributions, which can be easily controlled by varying the discharge pressure and downstream position. Moreover, changing the aperture size of the discharge cavity enables one to control the relative ratio of the ionic and atomic species in the plasma. In determining plasma stability, changes in plasma parameters after plasma start-up were investigated. The results show a correlation between changes in the plasma potential and the total plasma optical emission. In situ monitoring of the total plasma emission is suggested as a simple means of providing valuable information in real time about physical plasma parameter changes during processing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Suite 500, 5th Floor, 238 Main Street, Cambridge, Massachusetts 02142, USA : Blackwell Science Inc.
    International journal of gynecological cancer 5 (1995), S. 0 
    ISSN: 1525-1438
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Exfoliated cervical cells from 321 Japanese women were examined for human papillomavirus (HPV) DNA types 6, 11, 16, 18, 31, 33 and 35 using polymerase chain reaction (PCR) and dot-blot hybridization methods. HPV DNA was present in 9.3% of patients with normal cervixes, 72.7% of patients with cervical intraepithelial neoplasia (CIN) and 77.8% of patients with invasive carcinoma. Younger patients (〈inlineGraphic alt="leqslant R: less-than-or-eq, slant" extraInfo="nonStandardEntity" href="urn:x-wiley:1048891X:IJG05010045:les" location="les.gif"/〉29 years) with normal cervixes had a 18.5% incidence of HPV DNA, whilst similar older patients (〈inlineGraphic alt="geqslant R: gt-or-equal, slanted" extraInfo="nonStandardEntity" href="urn:x-wiley:1048891X:IJG05010045:ges" location="ges.gif"/〉50 years) had a 1.9% incidence, a significant difference (χ2= 6.478, P 〈 0.01). In the CIN I and II groups, an incidence of 11.1% of types 16 and 18 was found, while in the CIN III or invasive carcinoma group the incidence was 58.1%, again a significant difference (χ2 = 12.075, P 〈 0.01). Furthermore, persistence or progression of CIN showed a significant correlation with infections by types 16 and 33 (χ2= 4.904, P 〈 0.01). However, no significantly different incidence of HPV infection was found between the CIN and the invasive carcinoma groups. It is suggested that (a) younger patients with normal cervixes have a higher incidence of HPV infection than do older patients; (b) HPV types 16, 18 and 33 are important etiologic agents of CIN III and invasive carcinoma, as well as in the persistence and progression of CIN; (c) progression of CIN to invasive carcinoma may depend on factors other than HPV infection in the cervix.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Three Cambridge Center, Suite 208, Cambridge, MA 02142, USA : Blackwell Scientific Publications Inc.
    International journal of gynecological cancer 1 (1991), S. 0 
    ISSN: 1525-1438
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A differential assessment by colposcopy of three subgroups of stage I in the new FIGO classification of cervical cancer was attempted. Colposcopic findings in invasive cancer were atypical white epithelium, atypical mosaic, papillary punctation, atypical vessels, abnormal ‘rock-like’ projection, papillomatous growth and ulcer. Ulcer and abnormal ‘rock-like’ projection were more suggestive of a frank invasive carcinoma than a microinvasive carcinoma. While 89% of the cases in stage Ib were correctly predicted, only about 50% of those in stage Ia were correctly predicted. We propose that a colposcopic assessment be included in the armamentarium to decide the method of treatment for cervical cancer patients.
    Type of Medium: Electronic Resource
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