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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2848-2853 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have developed a variational formalism to calculate the effects of electric and magnetic fields on confined hydrogenic donor states in asymmetric coupled double quantum well structures. It is demonstrated that an electric field applied along the growth axis can easily shift the electron wave function from one quantum well across the center barrier into the neighboring well, without ejecting the electron from a confined donor state. Depending on donor location in the structure, binding energy can either increase or decrease under the applied electric field, as had been found in the case of single quantum wells, but with significantly greater rates of change in response to the external field. The magnetic field applied along the growth axis of the quantum well structure leads to additional quantum confinement, increasing both the donor binding energies and the transition energy between the 1s and 2p+ donor states. Effect of the relative size of the two coupled quantum wells on the donor binding energy is also discussed. Dipole moment and polarizability of the confined donor states are obtained simultaneously as well.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5348-5356 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a theory of absorptive electro-optic spatial light modulators based on GaAs/AlGaAs multi-quantum well structures using arbitrary potential well profiles. In particular, we consider three different quantum well profiles: square, parabolic, and asymmetric triangular. We calculate the transition energies, oscillator strengths and absorption co-efficients of the lowest-lying heavy- and light-hole excitons as a function of well width and electric field using a variational approach assuming decoupled valence subbands. For illustrative purposes we select the photon energy of the monochromatic source to be modulated at 1572 meV and aluminum concentration in the barriers to be 0.3. For the sake of comparison among the various modulators with different quantum well profiles we assume that this photon energy coincides with the lowest-heavy-hole exciton transition in the absence of an electric field. We find that the required well widths are 75 A(ring) for the square well, 174 A(ring) for the parabolic well, and 676 A(ring) for the asymmetric triangular well. At zero electric field the values of the exciton oscillator strengths in all three quantum well systems are comparable. However, superior performance in terms of higher contrast ratio is obtained in the case of modulators based on asymmetric triangular wells. For instance, in the case of a square well with excitonic linewidth of 3 meV, a field of approximately 50 kV/cm is required to achieve a 30% decrease in absorption. On the other hand, the field required to achieve the same change in absorption in a parabolic well is 35 kV/cm and in an asymmetric triangular well is −7 kV/cm. The contrast ratio at an electric field of −20 kV/cm is 6.7 for an asymmetric triangular well and 1.02 for a square well in a multi-quantum well sample where the contacts are 2 μm apart.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3958-3961 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Low-temperature (4.5 K) photoluminescence (PL) spectra of liquid phase electroepitaxially grown GaSb and GaInAsSb have been examined. The excitonic transitions observed in GaSb and GaInAsSb layers of compositions close to the GaSb corner of the phase diagram indicate an excellent quality of the grown layers. A systematic trend in the low-temperature PL spectra is observed with the change in the alloy composition. The overall PL emission efficiency decreases and the number of excitonic transitions are fewer with the shift in the composition towards the lower band gap. Shift in the PL peak energy corresponding to the band to band transition with temperature was determined. The linear part of the shift above 100 K exhibits a slope of −0.3 meV/K.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1866-1868 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a calculation on the effect of the magnetic field on the excitonic photoluminescence linewidth in intentionally undoped semiconductor alloys. We assume that the dominant mechanism for line broadening is due to the potential fluctuations caused by the disorder of the components of the alloy. Variations in the local concentrations from the global value are accounted for by using statistical mechanical arguments developed by Lifshitz [Adv. Physics 13, 483 (1965)] and then related to the linewidth. When a magnetic field is applied to the system, the effective volume of the optical probe, namely, the exciton, is reduced, causing it to become more responsive to the statistical potential fluctuations. This results in the broadening of the photoluminescence line as a function of the magnetic field. Variation of the excitonic linewidth as a function of the magnetic field and alloy composition in AlxGa1−x As is presented.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1788-1796 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A quantum statistical formalism has been developed for the excitonic luminescence linewidths and line shapes in semiconductor binary alloys due to band-gap fluctuations caused by the random distributions of the alloy components in an applied magnetic field. The virtual crystal approximation is used to estimate the local band-gap variations. The shifts of the excitonic transition energy due to the band-gap fluctuations are obtained using the first-order perturbation theory. A Gaussian line shape is obtained for the excitonic transition using standard statistical techniques. This formalism is applied to calculate the linewidths and line shapes associated with the ground-state excitonic transition as a function of alloy composition and magnetic-field strength in AlxGa1−xAs and InxGa1−xP alloys. The resulting linewidths and line shapes are in good agreement with the available low-temperature photoluminescence data; however, the calculated linewidths are consistently smaller than the measured values. The possible mechanisms responsible for this discrepancy are discussed. A comparison of excitonic linewidths obtained from the present theory with those calculated earlier is also presented.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6478-6483 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effective mass of an electron in InP determined from Zeeman splittings of the donor 2P level shows a strong magnetic field dependence. This Zeeman effective mass is approximately 45% smaller than the cyclotron mass at low magnetic fields. This was deduced from both the orbital and spin splittings of the 2P donor levels. The magnetic field splittings were determined from radiative transitions resulting from collapse of donor bound excitons leaving the terminal state in an excited state. The magnitude of the effect is much larger than that previously observed in GaAs. This anomaly is qualitatively explained on the basis of level mixing resulting from random static electric fields present throughout the crystal due to ionized impurity centers. The mass obtained from the orbital splitting is in good agreement with that obtained from the spin splitting.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4056-4059 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a theory correlating the excitonic photoluminescence linewidth in quantum wells with the microscopic structure of the interface in the presence of a magnetic field. The interface is described in terms of microscopic fluctuations δ1 and δ2 where δ1 is the local fluctuation in the well width and δ2 is the lateral correlated extent of the fluctuation. We use Lifshitz's theory of disordered alloys to determine the probability distribution of fluctuations of the well size over the effective extent of the optical probe, namely, the exciton. The line shape is then calculated from this distribution. We have evaluated the fullwidth at half maximum (σ) for both the heavy-hole exciton and the light-hole exciton as a function of the well size and interface parameters δ1 and δ2 in the presence of a magnetic field in GaAs-Al0.3Ga0.7As and In0.53Ga0.47As-InP quantum well structures. We find that for a given set of values of well width and interface parameters, the application of the magnetic field reduces the effective size of the exciton and thus increases the linewidth.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 322-324 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We propose a new model for alloy scattering in semiconductor alloys in which the alloy scattering potential is allowed to have an energy dependence which is calculated from the band structures of the components. At low electric fields this model reduces to the conventional model based on electronegativity differences of the components. At high fields where the electron distribution function is shifted to higher electron energies, our model leads to reduced alloy scattering. This in turn leads to a reduction in the threshold fields and an increase in peak velocities. This model is applied to In0.53Ga0.47As and the results thus obtained are compared with the available experimental data.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5433-5437 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A formalism to study the effect of alloy disorder and interface roughness on the linewidths of excitonic emission spectra in quantum-well structures is developed. The study includes the cases where the alloy forms (a) the barrier region, (b) the well region, and (c) both the barrier and well regions of the quantum-well structures, and demonstrates the importance of alloy quality in all three cases. The relative importance of the effects of alloy disorder and interface roughness on the excitonic linewidths is discussed. As an illustration, the formalism is applied to AlGaAs/GaAs, InP/InGaAs, and InAlAs/InGaAs quantum-well structures and the results compared with the available experimental data.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1185-1185 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
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