ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
There is a great need for an in-line, high-speed and non-destructive inspection systemcapable of evaluating and analyzing the quality of SiC wafers for SiC power devices. We haveexamined whether the laser-based optical non-destructive inspection system by KLA-Tencor meetsthese requirements. Using this system, incoming inspection of purchased SiC wafers has beenperformed. The obtained inspection data show that micropipe density is sufficiently low in adevice-grade wafer, and therefore, micropipes are not the main cause of device failure. The nextchallenges for a device-grade SiC wafer are reduction of epitaxial defects and relatively small defectsclassified as “particles”
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.553.pdf
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