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  • 1
    Electronic Resource
    Electronic Resource
    Two-dimensional growth of strained Ge0.85Si0.15 on Si(111) by liquid phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2083-2085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxy immediate to thermodynamical equilibrium is investigated for liquid phase epitaxy of Ge0.85Si0.15 on Si(111). Below and beyond the critical thickness for strain relaxation, the GeSi layer grows in a two-dimensional mode. The critical thickness agrees well with mechanical equilibrium considerations. Strain relaxation is found to take place by the confined formation of misfit dislocations directly at the Ge0.85Si0.15/Si interface. We do not observe half-loop formation at the layer surface. The misfit dislocations (b=1/6〈112〉) form regular networks, which are buried under a structurally perfect relaxed GeSi layer virtually free of threading dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351644
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of epitaxial lateral overgrowth by x-ray topography (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 405-409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial lateral overgrowth by liquid phase epitaxy of silicon over SiO2 has been investigated by x-ray double crystal topography. A large number of lamellae was free of crystallographic defects, but all of the lamellae showed growth striations. For the lamellae grown from indium solutions growth striations with indium concentration differences of about 1016–2 × 1017 cm−3 were detected. A considerable part of the indium impurities in the lamellae seemed to be electrically inactive. The tilt of the defect free lamellae against the substrate is of the order of 10−6. Some of the lamellae showed single dislocations parallel to the sample surface. These dislocations originated at the edges of the seeding windows and ended in reentrant corners at the outer edge of the lamellae. In most of the defective lamellae the dislocations formed a dense network.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351868
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  • 3
    Electronic Resource
    Electronic Resource
    Water vapor controlling selective reactive ion etching of SiO2/Si in NF3 plasma (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1575-1578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Water vapor added to NF3 plasma during reactive ion etching controls the ratio of the etch rates of SiO2 and Si. Selectivity rises from a value of 0.14 at water-free 100% NF3 to 1.99 for an initial gas composition of 35% H2O-65% NF3. The results of mass and energy analysis of the plasma yield a basis for discussing the mechanisms which effect the selectivity. The NF3/H2O plasma removes native oxides from Si surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354830
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  • 4
    Electronic Resource
    Electronic Resource
    Mass and energy analysis of gaseous species in NF3 plasma during silicon reactive ion etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 62-67 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutral molecules and positive ions, extracted directly from the reaction zone during reactive ion etching of silicon in NF3 plasma, have been identified by quadrupole mass spectrometry. The main etching end products are SiF4 molecules and SiF+3 ions. Reactive species that contribute to the etching are atomic F radicals and F+2 molecular ions. Most of the positive ions in the plasma hold NF+2 ions and this facilitates etching of negatively biased Si by bombardment. Likewise, the kinetic energy of ions that impinge on an electrically grounded surface can be measured by using a cylindrical mirror analyzer. Within a certain range of plasma parameters there are no obvious differences in kinetic energies among the observed ions in the plasma. Under a constant NF3 pressure of 6.7 Pa, the characteristic mean ion energy of 4 eV at an rf power of 10 W increases to 20 eV by increasing the rf power to 90 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355250
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  • 5
    Electronic Resource
    Electronic Resource
    Liquid-phase epitaxy and characterization of Si1−xGex layers on Si substrates (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2158-2163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid-phase epitaxy allows SiGe alloys of good quality to be grown on Si substrates. We deposit single crystalline, n-type Si1−xGex films with 0.7〈x〈1 from Bi solutions on (111)-oriented Si. The films are up to several μm thick and are uniform in thickness and in composition. The analysis by x-ray diffraction indicates good crystallinity and a dislocation density below 5×107 cm−2. Photoluminescence measurements show well-resolved peaks with the smallest linewidths reported so far for epitaxial SiGe. Hall-effect measurements yield electron concentrations around 1×1016 cm−3 and room-temperature electron mobilities of up to 340 cm2/V s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346572
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  • 6
    Electronic Resource
    Electronic Resource
    Adhesion in growth of defect-free silicon over silicon oxide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4101-4107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By applying liquid phase epitaxy, we have grown defect-free silicon and silicon–germanium layers on partially oxide-masked Si wafers. The growth of the layers started epitaxially in oxide-free seeding areas and proceeded laterally over the thermal oxide film. Detailed studies by x-ray topography and electron microscopy show that the obtained thin semiconductor-on-insulator layers bend towards the oxide during lateral growth. The bending of the layers can be ascribed to adhesion and interfacial forces. Adhesion operates across a gap between the closely spaced surfaces of the oxide and the epitaxial Si and facilitates lateral growth of high-quality semiconductor layers on dissimilar layers or substrates. The technical potential of adhesion-dependent solution growth on dissimilar substrates is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363371
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  • 7
    Electronic Resource
    Electronic Resource
    A local vibrational mode investigation of p-type Si-doped GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7839-7849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption (IR) and Raman scattering measurements have been made of the localized vibration modes (LVM) due to defects incorporating silicon impurities in p-type Si-doped GaAs grown by liquid phase epitaxy (LPE) on (001) planes and by molecular beam epitaxy (MBE) on (111)A and (311)A planes. Analysis of a closely compensated LPE sample indicated that an existing calibration factor for the SiAs LVM (399 cm−1) relating the integrated absorption coefficient (IA) to the concentration [SiAs] should be increased by 40%, so that IA=1 cm−2 corresponds to [SiAs]=7×1016 cm−3. The SiAs LVM appeared as a Fano dip in the hole absorption continuum at ∼395 cm−1 in the highly doped p-type material, some 4 cm−1 lower in frequency than its normal position in compensated GaAs. Electron irradiation of samples led to the progressive removal of the Fano dip and a shift with the emergence of the expected SiAs LVM absorption line at 399 cm−1. In MBE samples the irradiation also generated SiGa donors, but the site switching was not detected in LPE material. By contrast, Raman spectra of as-grown p-type samples exhibited a symmetrical peak at 395 cm−1, which also shifted towards 399 cm−1 as the free carriers were removed. MBE (111)A GaAs:Si compensated by SnGa donors revealed the SiAs LVM at its normal position. After hydrogenation of MBE and LPE samples, only stretch modes due to H-SiAs were observed. Passivated MBE GaAs (111)A codoped with Si and Be showed stretch modes due to both shallow acceptors. It was thereby concluded that only one type of acceptor (SiAs) was present in p-type Si-doped GaAs, contrary to previous proposals. There was no evidence for the presence of SiAs pairs or larger clusters. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357892
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  • 8
    Electronic Resource
    Electronic Resource
    Defect-free epitaxial lateral overgrowth of oxidized (111) Si by liquid phase epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 351-353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on epitaxial lateral overgrowth of Si on oxidized (111) Si wafers by liquid phase epitaxy. The growth starts in oxide-free seeding windows and proceeds laterally over the SiO2. Growth effectively ceases when (111) sidewalls form. This observation allows the development of a geometrical model that, for the first time, explains the observed dependence of the overgrowth width on the orientation of the seeding windows. We obtain a maximum overgrowth width of 120–130 μm and a maximum aspect ratio of 40:1. Transmission electron microscopy reveals no crystallographic defects in the overgrown lamellae.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103689
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  • 9
    Electronic Resource
    Electronic Resource
    Surface ripples, crosshatch pattern, and dislocation formation: Cooperating mechanisms in lattice mismatch relaxation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1232-1234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the interplay of elastic and plastic strain relaxation of SiGe/Si(001). We show that the formation of crosshatch patterns is the result of a strain relaxation process that essentially consists of four subsequent stages: (i) elastic strain relaxation by surface ripple formation; (ii) nucleation of dislocations at the rim of the substrate followed by dislocation glide and deposition of a misfit dislocation at the interface; (iii) a locally enhanced growth rate at the strain relaxed surface above the misfit dislocations that results in ridge formation. These ridges then form a crosshatch pattern that relax strain elastically. (iv) Preferred nucleation and multiplication of dislocations in the troughs of the crosshatch pattern due to strain concentration. The preferred formation of dislocations again results in locally enhanced growth rates in the trough and thus leads to smoothing of the growth surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115017
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  • 10
    Electronic Resource
    Electronic Resource
    Pressure dependence of the DX center in Ga1−xAlxAs:Te in the vicinity of the Γ-X crossover (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1195-1197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure dependence of the DX center in Ga1−xAlxAs :Te has been studied in two samples with x=0.15 and 0.35, respectively. The pressure coefficients of the activation energies for both emission and capture were found to change sign when the band gap of GaAlAs changes from direct to indirect. These results, together with previous experiments, suggested that electrons can be emitted from and capture into the DX centers via both L and X valleys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100017
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