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  • 1
    Digitale Medien
    Digitale Medien
    Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1255-1258 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The properties of low-temperature grown GaAs are studied via the electrical characterization of p-i-n structures with part of the intrinsic layer grown at 300 °C. Comparisons are made between the low-temperature and normally grown samples. The current of the low-temperature sample is about two orders of magnitude higher than that of the normally grown sample in both forward and reverse bias. From temperature-dependent analysis, the leakage current of the low-temperature sample is contributed by the recombination current through defect levels around the midgap, from which a recombination lifetime of 9.4×10−12 s was obtained. By using admittance spectroscopy we observed a dominant electron level at 0.60 eV with a corresponding capture cross section of 1.0×10−13 cm2 that was not observed in the normally grown sample; thus it is believed to be introduced by the As-rich low-temperature layer. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363837
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  • 2
    Digitale Medien
    Digitale Medien
    AlGaAs-GaAs and AlGaAs-GaAs-InGaAs vertical cavity surface emitting lasers with Ag mirrors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5629-5631 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We describe vertical cavity surface emitting lasers of GaAs active regions (0.7 μm thick) emitting at 0.85 μm and of In0.1Ga0.9As-GaAs active regions emitting at 0.90 μm. The vertical cavity is formed using an AlxGa1−xAs-AlAs quarter-wave stack as the n-type mirror and the metal Ag as the p-type mirror. The Ag mirror has potential for reduced series resistance, reduced thermal resistance, and more simplified device processing over other mirror structures for vertical cavity laser diodes. Current thresholds for pulsed room-temperature operation as low as 16 kA/cm2 for the GaAs and 51 kA/cm2 for the In0.1Ga0.9As-GaAs devices have been measured.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343671
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  • 3
    Digitale Medien
    Digitale Medien
    Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1369-1373 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance–voltage data but from resistance–capacitance time constant effect observed in capacitance–frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372022
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  • 4
    Digitale Medien
    Digitale Medien
    Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8074-8079 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current–voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300 °C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550 °C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current–voltage characteristics. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.373500
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  • 5
    Digitale Medien
    Digitale Medien
    Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1251-1254 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The onset of strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures is investigated. X-ray diffraction shows that when the InGaAs thickness increases beyond its critical thickness, another peak on the right shoulder of the GaAs peak appears, indicating that the top GaAs layer is being compressed in the growth direction by the relaxation of the InGaAs layer. Energy shifts of 44 and 49 meV are observed, respectively, from the strains of the InGaAs and GaAs top layers when increasing the InGaAs thickness from 300 and 1000 Å. These energy shifts are in agreement with theory calculated based on the relaxation process observed in x-ray diffraction, providing evidence that the relaxation occurs from near the bottom InGaAs/GaAs interface while the top interface still remains strained. This result is further corroborated by the images of cross-sectional transmission electron micrographs which show that most of the misfit dislocations are confined near the bottom interface. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372004
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  • 6
    Digitale Medien
    Digitale Medien
    The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4432-4435 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We propose and study a new GaSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling diode by varying the thicknesses of the InAs layer. A twice-higher peak current density and a three-times-higher peak-to-valley current ratio in the proposed structure with a 30-A(ring)-thick InAs layer were observed relative to the structure with no InAs layer. This result indicates that the characteristic of the negative differential resistance can be improved simply by placing a thin effective InAs barrier on the GaSb side of the GaSb/AlSb/InAs single-barrier structure. The increase of the peak current is interpreted as the result of forming a quasi-bound state in the GaSb well. This interpretation is supported by the observation that the current-voltage characteristic of the proposed structure is similar to that of a conventional GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structure.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350783
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  • 7
    Digitale Medien
    Digitale Medien
    Effects of Sb4/Ga ratios on the electrical properties of GaSb Schottky diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2760-2764 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Au, Cu, Ag, and Al are deposited on Te-doped n-GaSb layers directly grown on lattice mismatched GaAs semi-insulating substrates. Sb4/Ga beam equivalent pressure ratios are found to profoundly influence the electrical properties of the Schottky diodes investigated here. The fact that both breakdown voltage and barrier height decrease with increasing Sb4/Ga ratios is attributed to the increase in surface state densities for samples grown at higher Sb4/Ga ratios. This suggestion is further confirmed by the model of surface state densities employing the relationship of barrier height to metal work function. The surface state densities are in the range of 2.3×1014 to 1.2×1015 states/cm2/eV corresponding to Sb4/Ga ratios of 2 to 9, respectively. X-ray rocking peaks of samples grown at various Sb4/Ga ratios, and subsequently subjected to annealing, indicate different interactions at the interfaces which might support the observations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351050
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  • 8
    Digitale Medien
    Digitale Medien
    Interband tunneling through a heavy hole state (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6443-6445 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated interband tunneling transport through a hole well in five GaSb/AlSb/GaSb/AlSb/InAs type II tunnel devices in which the effect of the variation of barrier and well widths is systematically studied. Low temperature measurements were performed using high magnetic fields applied perpendicular to the current and hydrostatic pressures as external perturbations. A resonant current through the ground heavy hole subband in the GaSb well could be identified for the first time. This examination points out (i) the role of in-plane momentum conservation in determining the resonance onset voltage, and (ii) the occurrence of a shoulder in the current when a maximum of states conducts through a resonant subband.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355128
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  • 9
    Digitale Medien
    Digitale Medien
    Characterization of Te-doped GaSb grown by molecular beam epitaxy using SnTe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 277-281 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The use of SnTe as a source of donor impurities in the growth of n-type GaSb by molecular beam epitaxy (MBE) is investigated. Hall carrier concentrations between 1.23×1016 and 3.7×1018 cm−3 have been obtained with room-temperature Hall mobility as high as 5114 cm2/V s for a lightly doped GaSb layer with nH = 3.8 × 1016 cm−3. The temperature-dependent Hall concentrations have been analyzed according to the two-band model to obtain information about the effect of the band structure of GaSb on the electrical properties. In addition, the effects of V-III flux ratio on Te incorporation in GaSb are studied. The measured carrier concentrations are found to be insensitive to the antimony-to-gallium beam equivalent pressures (from 1.5 to 9) at a growth temperature of 500 °C. These results may lead to SnTe being one of the donor dopants of choice in the MBE growth of n-type GaSb.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350296
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  • 10
    Digitale Medien
    Digitale Medien
    Electrical and microstructural characteristics of Ti contacts on (001)Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2590-2597 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An investigation of the electrical and microstructural characteristics of the Ti contact on silicon has been carried out. The presence of As in Ti/n+-Si samples was found to retard the formation of polycrystalline silicide (p-silicide) compared with that in Ti/p+-Si samples with BF2+ implantation. Amorphous interlayers (a-interlayers) were found to be present in both Ti/n-Si and Ti/p-Si samples annealed at temperatures of and lower than 450 °C. Although the Schottky barrier heights (SBH's) vary for about 0.05–0.08 eV for samples annealed over a temperature range from room temperature to 900 °C, SBH's at the a-interlayer/n-Si and a-interlayer/p-Si were measured to be about 0.52–0.54 and 0.59–0.57 eV, respectively. The specific contact resistance (ρc) in the Ti/n+-Si system was measured to be the lowest with a value of 1.4×10−7 Ω cm2 when the a interlayer is present. In Ti/p+-Si system, the minimum ρc is about 3×10−7 Ω cm2. The variation in contact resistance with annealing temperature for both Ti/n+-Si and Ti/p+-Si samples is correlated to the change in dopant concentration beneath the contacts as well as microstructures. In the temperature regime where the a interlayer is in contact with the silicon substrate, the junction diode leakage current densities (Jleak's) are considerably lower than those in samples annealed at higher temperatures. The Jleak at −6 V reverse bias is lower than 1 nA/cm2. The breakdown voltage is about 14 V (16 V) for the n+/p (p+/n) junction. The thickness of consumed Si is less in samples annealed at low temperature, and the a-interlayer/Si or p-silicide/Si interface is accordingly farther away from the junction as well as the end-of-range defects. The interface of p-silicide/Si is rougher than that of a-interlayer/Si. In addition, the roughness of the p-silicide/Si interface increases with annealing temperature. For both p+/n and n+/p junctions annealed at 900 °C, rough p-silicide/Si interfaces are thought to lead to spiking and increase the leakage currents.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354672
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