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  • 1
    Electronic Resource
    Electronic Resource
    Growth of 2H-SiC on 6H-SiC by pulsed laser ablation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2667-2669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 2H-SiC thin film has been grown on a 6H-SiC substrate by laser ablation using an excimer laser. The deposition of 2H-SiC film occurred in a high vacuum system (≈10−6 Torr) with the substrate temperature near 1200 °C. Plan-view and cross-sectional transmission electron microscopy (TEM) were used to measure the lattice parameters and to identify the polytype. Cross-sectional TEM images clearly show the symmetry of the film as c-axis oriented 2H-SiC containing columnar grains with an average diameter of 20 nm and a length of 100 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111486
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  • 2
    Electronic Resource
    Electronic Resource
    Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7001-7004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362448
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  • 3
    Electronic Resource
    Electronic Resource
    Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 707-709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the electron sheet concentration ns(approximate)1013 cm−2) grown on conducting 6H–SiC substrates in the temperature range T=0.3–300 K. The electron mobility in AlGaN–GaN heterostructures grown on SiC was higher than in those on sapphire substrates, especially at cryogenic temperatures. The highest measured Hall mobility at room temperature was μH=2019 cm2/V s. At low temperatures, the electron mobility increased approximately five times and saturated below 10 K at μH=10250 cm2/V s. The experimental results are compared with the electron mobility calculations accounting for various electron scattering mechanisms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120852
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 64-66 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of external strain on the two-dimensional electron gas density in AlGaN/GaN heterostructures grown on sapphire by low pressure metalorganic chemical vapor deposition. The electron sheet concentration in the studied samples was 4×1012–2×1013 cm−2 and decreased with compressive strain. Lower doped heterostructures had a higher sensitivity to applied strain. The comparison between the experimental data and our model shows that the GaN layers are primarily nitrogen terminated at the heterointerface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120645
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  • 5
    Electronic Resource
    Electronic Resource
    High transconductance heterostructure field-effect transistors based on AlGaN/GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 794-796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field-effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 μm. This represents one of the best results for such device. A comparison of the maximum transconductance of devices on wafers with different channel conductance is presented to analyze the factors limiting the performance. Our data indicates the series resistance between the source and drain to be the limiting factor for the maximum dc transconductance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117894
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  • 6
    Electronic Resource
    Electronic Resource
    InGaN-GaN based light-emitting diodes over (111) spinel substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 369-370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the deposition of high quality GaN-InGaN double-heterostructure pn junctions over (111) spinel substrates using low-pressure metalorganic chemical vapor deposition. A ten-period undoped GaN-In0.1Ga0.9N multiple quantum well was used for the active region. Mesa-type light-emitting diode (LED) structures were fabricated which under forward bias exhibited only strong band-edge electroluminescence. The spectral emission was centered at 385 nm and had a linewidth of 15 nm. This is similar to what is measured for similar LED structures over sapphire substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118063
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  • 7
    Electronic Resource
    Electronic Resource
    Electron beam induced current measurements of minority carrier diffusion length in gallium nitride (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2531-2533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority carrier diffusion length in epitaxial GaN layers was measured as a function of majority carrier concentration and temperature. The diffusion length of holes in n-type GaN is found to decrease from 3.4 to 1.2 μm in the doping range of 5×1015–2×1018 cm−3. The experimental results can be fitted by assuming the Einstein relation and by the experimental dependence of hole mobilities on carrier concentration. The low injection carrier lifetime of ∼15 ns, used in the fit, is largely independent of the doping level. The diffusion length, measured for ∼5×1015 and 2×1018 cm−3 dopant concentrations, shows an increase with increasing temperature, characterized by an activation energy Ea of ∼90 meV, independent of the impurity concentration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117729
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  • 8
    Electronic Resource
    Electronic Resource
    Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1129-1131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the deposition of high quality single-crystal wurtzite GaN films on cubic (111) spinel (MgAl2O4) substrates. The room-temperature electron mobility and the optically pumped stimulated emission threshold for these films are nearly identical to those of films deposited on basal plane sapphire. Using cross sectional high resolution TEM we have determined the following orientation relationship between the film and the substrate: [0001]GaN//[111]MgAl2O4 and [112¯0]GaN//[110]MgAl2O4. This should provide a common cleavage plane for (111) spinel and the wurtzite GaN films over it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115735
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  • 9
    Electronic Resource
    Electronic Resource
    Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 333-335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater than 1.5° were required to achieve 6H on 6H at this growth temperature. In addition, 3C-SiC could be induced to grow within selected regions on the 6H substrate. The 3C regions contained few (or zero) double-positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105587
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  • 10
    Electronic Resource
    Electronic Resource
    Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2407-2409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the low pressure metal organic chemical-vapor deposition of single crystal cubic GaN films over (100) GaAs substrates. Using photoluminescence and direct optical absorption measurements we estimate the band gap for c-GaN at room temperature to be 3.3 eV. Reflection high energy electron diffraction, x-ray, transmission electron microscopy, optical absorption, and room-temperature photoluminescence data are presented to establish the quality of a 0.8-μm-thick cubic GaN film over (100) GaAs substrate. Preliminary measurement results for the carrier density and mobility of the as-deposited c-GaN film are also presented. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112690
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