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  • 1
    Electronic Resource
    Electronic Resource
    Growth of 2H-SiC on 6H-SiC by pulsed laser ablation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2667-2669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 2H-SiC thin film has been grown on a 6H-SiC substrate by laser ablation using an excimer laser. The deposition of 2H-SiC film occurred in a high vacuum system (≈10−6 Torr) with the substrate temperature near 1200 °C. Plan-view and cross-sectional transmission electron microscopy (TEM) were used to measure the lattice parameters and to identify the polytype. Cross-sectional TEM images clearly show the symmetry of the film as c-axis oriented 2H-SiC containing columnar grains with an average diameter of 20 nm and a length of 100 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111486
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  • 2
    Electronic Resource
    Electronic Resource
    Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7001-7004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362448
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature-mediated phase selection during growth of GaN on (111)A and (1¯1¯1¯)B GaAs substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3759-3761 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN layers having the zinc blende and wurtzite structures can be selectively deposited on (111)A and (1¯1¯1¯)B GaAs substrates by varying the growth temperature. Using the growth temperature as a variable, layers having the two structures have been sequentially deposited. The as-grown structures have been examined by cross-sectional high resolution electron microscopy. Results indicate that the two phases once formed are structurally stable in the temperature range examined. Furthermore, the transition from GaN (zinc blende) to GaN (wurtzite) is sharp, whereas a faulted region is observed during the reverse transition. Arguments have been developed to rationalize these observations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115374
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of WNx films and WNx/GaAs Schottky diodes prepared by ion beam assisted deposition technique (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1134-1136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy ion beam assisted deposition (IBAD) of refractory tungsten nitride films onto GaAs is attempted for the first time. This ion beam technique provides lower process pressure, and less ion damage to substrates and films than conventional reactive sputter deposition. Schottky diode characteristics of W/ and WNx/GaAs and their thermal stability were investigated by capping the refractory films with SiO2 films and subsequent annealing at 700–900 °C for 30 min. While both tungsten and tungsten nitride contacts were stable up to 850 °C, the tungsten nitride contact showed better thermal stability and higher Schottky barrier height. The Schottky barrier heights of W/ and WN0.27/GaAs diodes annealed at 850 °C were 0.71 and 0.84 eV, respectively. These preliminary results are comparable to those of the best results reported with the conventional sputtering methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345759
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  • 5
    Electronic Resource
    Electronic Resource
    Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 977-979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of a comparative photoluminescence (PL) study of GaN and InGaN-based epilayers, and InGaN/GaN multiple quantum wells (MQWs). Room-temperature PL spectra were measured for a very broad range of optical excitation from 10 mW/cm2 up to 1 MW/cm2. In contrast to GaN epilayers, all In-containing samples exhibited an excitation-induced blueshift of the peak emission. In addition, the blueshift of the emission in the InGaN epilayers with the same composition as the quantum well was significantly smaller. The comparison of the blueshift in the "bulk" InGaN and in the MQWs allowed us to separate two different mechanisms responsible for this effect: (i) filling of the localized states in In-rich areas and (ii) screening of the polarization electric field in strained MQW structures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433164
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  • 6
    Electronic Resource
    Electronic Resource
    Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2343-2345 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A "pulsed metalorganic chemical vapor deposition" technique has been developed for lateral overgrowth of GaN thin films on SiC with conducting buffer layers for vertically conducting devices. Growth was carried out at temperatures as low as 950 °C keeping a constant gallium flux while pulsing NH3. We demonstrate that, by varying the NH3 pulse duration, growth morphology can be gradually changed from triangular to rectangular for the lateral overgrowth. Even at a V/III ratio as low as 550, high quality smooth layers with (11¯00) vertical facets were successfully grown with a lateral to vertical growth rate ratio as high as 4:1. Atomic force microscopic measurements show the root-mean-square roughness of the laterally overgrown layers to be 7.0 Å. Scanning thermal microscopy was used to measure a thermal conductivity of 1.7 and 1.5 W/cm K, respectively, for the laterally overgrown film and the GaN deposition in the window region. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316063
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  • 7
    Electronic Resource
    Electronic Resource
    Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 273-275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor deposition growth procedure in selective areas defined by openings in a SiO2 mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 °C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the thermal impedance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125745
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  • 8
    Electronic Resource
    Electronic Resource
    Lattice and energy band engineering in AlInGaN/GaN heterostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1161-1163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on structural, optical, and electrical properties of AlxInyGa1−x−yNGaN heterostructures grown on sapphire and 6H–SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap, ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔEg on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN heterostructures strongly affect the transport properties of the two-dimensional electron gas at the heterointerface. The obtained results demonstrate the potential of strain energy band engineering for GaN-based electronic applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125970
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  • 9
    Electronic Resource
    Electronic Resource
    High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3800-3802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on quaternary AlInGaN/InGaN multiple quantum well (MQW) light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–n junctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes (LEDs). The obtained data indicate the recombination in p–n junction space charge region to be responsible for a current transport in LED structures with quaternary quantum wells. This is in contrast to InGaN based LEDs, where carrier tunneling dominates either because of high doping of the active layer or due to the high density of localized states. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331084
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  • 10
    Electronic Resource
    Electronic Resource
    SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 863-865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a transparent Schottky-barrier ultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306647
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