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  • 11
    Electronic Resource
    Electronic Resource
    Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1647-1649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of cubic SiC has been carried out on Si(111), Si(100), and SiC(0001) substrates using chemical vapor deposition at atmospheric pressure. Hexamethyldisilane (HMDS) was used as the only precursor and pure Ar or a nonflammable mixture of Ar and H2 was used as the carrier gas. The crystallinity was characterized by x-ray diffraction, reflection high energy electron diffraction (RHEED), and transmission electron microscopy. It was found that polycrystalline layers were obtained at low growth temperatures and with pure Ar as the carrier gas, while the crystallinity improved at temperatures above 1300 °C and when H2 was added. Under optimum growth conditions most of the grains are oriented with parallel epitaxy or with twinned epitaxy with respect to an (111) substrate. A Si/SiC heterodiode was also grown and it shows a breakdown voltage of more than 100 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111819
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  • 12
    Electronic Resource
    Electronic Resource
    Temperature-mediated phase selection during growth of GaN on (111)A and (1¯1¯1¯)B GaAs substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3759-3761 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN layers having the zinc blende and wurtzite structures can be selectively deposited on (111)A and (1¯1¯1¯)B GaAs substrates by varying the growth temperature. Using the growth temperature as a variable, layers having the two structures have been sequentially deposited. The as-grown structures have been examined by cross-sectional high resolution electron microscopy. Results indicate that the two phases once formed are structurally stable in the temperature range examined. Furthermore, the transition from GaN (zinc blende) to GaN (wurtzite) is sharp, whereas a faulted region is observed during the reverse transition. Arguments have been developed to rationalize these observations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115374
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  • 13
    Electronic Resource
    Electronic Resource
    Application of oxidation to the structural characterization of SiC epitaxial films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 183-185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both 3C-SiC and 6H-SiC single-crystal films can be grown on vicinal (0001) 6H-SiC wafers. We have found that oxidation can be a powerful diagnostic process for (1) "color mapping'' the 3C and 6H regions of these films, (2) decorating stacking faults in the films, (3) enhancing the decoration of double positioning boundaries, and (4) decorating polishing damage. Contrary to previously published oxidation results, proper oxidation conditions can yield interference colors that provide a definitive map of the polytype distribution for both the Si face and C face of SiC films. Defects were more effectively decorated by oxidation on the Si face than on the C face.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105960
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  • 14
    Electronic Resource
    Electronic Resource
    Visible-blind GaN Schottky barrier detectors grown on Si(111) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 551-553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report novel GaN detectors grown by molecular beam epitaxy on Si(111) substrates. Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition. Spectral response of lateral geometry Schottky detectors shows a sharp cutoff at 365 nm with peak responsivities of ∼0.05 A/W at 0 V, and ∼0.1 A/W with a −4 V bias. The dark current is ∼60 nA at −2 V bias. The noise equivalent power is estimated to be 3.7×10−9 W over the response bandwidth of 2.2 MHz. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120755
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  • 15
    Electronic Resource
    Electronic Resource
    Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3673-3675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a high positive turn-on voltage (close to 2.5 V) of the gate-source leakage current in AlGaN/GaN high electron mobility transistors (HEMTs). The piezoeffect, the barrier, and channel doping result in the electron sheet concentration as high as 1013 cm−2. A larger conduction band discontinuity and a larger electron effective mass (compared to AlGaAs/GaAs HEMTs) lead to a lower gate current and to a higher turn-on voltage. This means that AlGaN/GaN technology can be suitable for applications in digital and mixed-mode integrated circuits. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120477
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  • 16
    Electronic Resource
    Electronic Resource
    Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2978-2980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction- and valence-band discontinuities at the GaN–In0.13Ga0.87N heterointerface to be approximately 130–155 and 245–220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118762
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  • 17
    Electronic Resource
    Electronic Resource
    High quality GaN–InGaN heterostructures grown on (111) silicon substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3566-3568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117247
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  • 18
    Electronic Resource
    Electronic Resource
    Piezoelectric doping in AlInGaN/GaN heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2806-2808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the piezoelectric doping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H–SiC substrates. The contribution of piezoelectric doping to the sheet electron density was determined using an In-controlled built-in strain-modulation technique. Our results demonstrate that in strained AlGaN/GaN heterostructures, the piezoelectric field generates at least 50% of the 2D electrons. The strain modulation changes the potential distribution at the heterointerface, which, in turn, strongly affects the 2D electron mobility, especially at cryogenic temperatures. The obtained results demonstrate the potential of strain engineering and piezoelectric doping for GaN-based electronics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125156
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  • 19
    Electronic Resource
    Electronic Resource
    Schottky barrier detectors on GaN for visible–blind ultraviolet detection (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2277-2279 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n−/n+-GaN structures grown over sapphire substrates. Spectral responsivity measurements were made using illumination through the UV transparent Schottky barrier metal. A responsitivity as high as 0.18 A/W was measured for wavelengths shorter than the absorption edge of GaN. The detector speed was RC limited and the fall time was 118 ns. The 1/f noise is identified to be the main noise contribution. At 300 Hz, we measure the noise equivalent power at less than 4×10−9 W. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118837
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  • 20
    Electronic Resource
    Electronic Resource
    Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1444-1446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Mg-doped green light emitting diodes (LEDs) over cubic (111) MgAl2O4 substrates with a very strong impurity band electroluminescence. A 0.2-micron-thick Mg-doped In0.13Ga0.87N layer was used in the active region of mesa type LED structures. The emission spectrum was centered at 510 nm (green) with a full-width at half-maximum of 60 nm. At a forward bias current of 20 mA the output power and the external quantum efficiency were about 200 μW and 0.3%. The origin of green light in the Mg-doped In0.13Ga0.87N layer has also been studied by time resolved photoluminescence. Our study demonstrates impurity band LEDs to be a viable alternative to band edge emission green LEDs with high indium mole fractions in the active region. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118557
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