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  • 1
    Electronic Resource
    Electronic Resource
    Growth of 2H-SiC on 6H-SiC by pulsed laser ablation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2667-2669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 2H-SiC thin film has been grown on a 6H-SiC substrate by laser ablation using an excimer laser. The deposition of 2H-SiC film occurred in a high vacuum system (≈10−6 Torr) with the substrate temperature near 1200 °C. Plan-view and cross-sectional transmission electron microscopy (TEM) were used to measure the lattice parameters and to identify the polytype. Cross-sectional TEM images clearly show the symmetry of the film as c-axis oriented 2H-SiC containing columnar grains with an average diameter of 20 nm and a length of 100 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111486
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  • 2
    Electronic Resource
    Electronic Resource
    Bias-assisted photoelectrochemical oxidation of n-GaN in H2O (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1029-1031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of gallium oxide on n-GaN was realized in H2O by bias-assisted photoelectrochemical (PEC) oxidation using Al as a counterelectrode instead of a Pt commonly used in the PEC process. Although the growth of the oxide was not observed at below 2 V, the initial oxide growth rate of 8.7 nm/min was shown at a bias of 15 V and ultraviolet light intensity of 300 mW/cm2. However, the growth rate lowered and oxide thickness was saturated to 340 nm. The saturated oxide thickness and initial growth rate were increased with the applied bias. The homogeneous oxide growth and near stoichiometric composition of Ga2O3 were observed in Auger electron spectroscopy analysis results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498863
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  • 3
    Electronic Resource
    Electronic Resource
    Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7001-7004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362448
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  • 4
    Electronic Resource
    Electronic Resource
    Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 707-709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the electron sheet concentration ns(approximate)1013 cm−2) grown on conducting 6H–SiC substrates in the temperature range T=0.3–300 K. The electron mobility in AlGaN–GaN heterostructures grown on SiC was higher than in those on sapphire substrates, especially at cryogenic temperatures. The highest measured Hall mobility at room temperature was μH=2019 cm2/V s. At low temperatures, the electron mobility increased approximately five times and saturated below 10 K at μH=10250 cm2/V s. The experimental results are compared with the electron mobility calculations accounting for various electron scattering mechanisms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120852
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  • 5
    Electronic Resource
    Electronic Resource
    Visible-blind GaN Schottky barrier detectors grown on Si(111) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 551-553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report novel GaN detectors grown by molecular beam epitaxy on Si(111) substrates. Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition. Spectral response of lateral geometry Schottky detectors shows a sharp cutoff at 365 nm with peak responsivities of ∼0.05 A/W at 0 V, and ∼0.1 A/W with a −4 V bias. The dark current is ∼60 nA at −2 V bias. The noise equivalent power is estimated to be 3.7×10−9 W over the response bandwidth of 2.2 MHz. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120755
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  • 6
    Electronic Resource
    Electronic Resource
    Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2407-2409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the low pressure metal organic chemical-vapor deposition of single crystal cubic GaN films over (100) GaAs substrates. Using photoluminescence and direct optical absorption measurements we estimate the band gap for c-GaN at room temperature to be 3.3 eV. Reflection high energy electron diffraction, x-ray, transmission electron microscopy, optical absorption, and room-temperature photoluminescence data are presented to establish the quality of a 0.8-μm-thick cubic GaN film over (100) GaAs substrate. Preliminary measurement results for the carrier density and mobility of the as-deposited c-GaN film are also presented. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112690
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  • 7
    Electronic Resource
    Electronic Resource
    Properties of WNx films and WNx/GaAs Schottky diodes prepared by ion beam assisted deposition technique (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1134-1136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy ion beam assisted deposition (IBAD) of refractory tungsten nitride films onto GaAs is attempted for the first time. This ion beam technique provides lower process pressure, and less ion damage to substrates and films than conventional reactive sputter deposition. Schottky diode characteristics of W/ and WNx/GaAs and their thermal stability were investigated by capping the refractory films with SiO2 films and subsequent annealing at 700–900 °C for 30 min. While both tungsten and tungsten nitride contacts were stable up to 850 °C, the tungsten nitride contact showed better thermal stability and higher Schottky barrier height. The Schottky barrier heights of W/ and WN0.27/GaAs diodes annealed at 850 °C were 0.71 and 0.84 eV, respectively. These preliminary results are comparable to those of the best results reported with the conventional sputtering methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345759
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  • 8
    Electronic Resource
    Electronic Resource
    Lattice and energy band engineering in AlInGaN/GaN heterostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1161-1163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on structural, optical, and electrical properties of AlxInyGa1−x−yNGaN heterostructures grown on sapphire and 6H–SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap, ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔEg on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN heterostructures strongly affect the transport properties of the two-dimensional electron gas at the heterointerface. The obtained results demonstrate the potential of strain energy band engineering for GaN-based electronic applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125970
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  • 9
    Electronic Resource
    Electronic Resource
    Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 977-979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of a comparative photoluminescence (PL) study of GaN and InGaN-based epilayers, and InGaN/GaN multiple quantum wells (MQWs). Room-temperature PL spectra were measured for a very broad range of optical excitation from 10 mW/cm2 up to 1 MW/cm2. In contrast to GaN epilayers, all In-containing samples exhibited an excitation-induced blueshift of the peak emission. In addition, the blueshift of the emission in the InGaN epilayers with the same composition as the quantum well was significantly smaller. The comparison of the blueshift in the "bulk" InGaN and in the MQWs allowed us to separate two different mechanisms responsible for this effect: (i) filling of the localized states in In-rich areas and (ii) screening of the polarization electric field in strained MQW structures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433164
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  • 10
    Electronic Resource
    Electronic Resource
    High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3800-3802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on quaternary AlInGaN/InGaN multiple quantum well (MQW) light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–n junctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes (LEDs). The obtained data indicate the recombination in p–n junction space charge region to be responsible for a current transport in LED structures with quaternary quantum wells. This is in contrast to InGaN based LEDs, where carrier tunneling dominates either because of high doping of the active layer or due to the high density of localized states. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331084
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