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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3764-3769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using thermally stimulated current (TSC) spectroscopy we have identified the presence of several deep traps in low temperature grown (LTG) nonintentionally doped bulk molecular beam epitaxy (MBE)-GaAs and silicon planar-doped MBE-GaAs samples. The experiments of TSC spectroscopy were carried out on a LTG MBE-GaAs epilayer grown at 300 °C and the planar-doped layer with a nominal silicon concentration of 3.4×1012 cm−2. The LTG nonintentionally doped bulk MBE-GaAs sample shows three peaks in the TSC spectra but the planar-doped MBE-GaAs sample shows spectra similar to those of bulk samples grown by the liquid-encapsulated Czochralski and vertical gradient freeze methods. The main achievement is the experimental evidence that the potential well present in the planar-doped sample is effective in detecting the presence of different deep traps previously not seen in LTG bulk MBE-GaAs epilayers due to a shorter carrier lifetime (about 10−12 s) in the conduction band which occurs due to EL2-like deep traps recombination. This fact is evidenced by a strong hopping conduction in LTG bulk MBE-GaAs samples at temperatures lower than 300 K, but not in planar-doped MBE-GaAs samples because the two-dimensional electron gas has a higher mobility than lateral LTG bulk MBE-GaAs epilayers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368588
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Te as a surfactant on the optical properties of InAs self-assembled quantum dots (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 521-523 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical experiments in self-assembled InAs quantum dots grown on (100) and (311)A GaAs surfaces which were precovered with Te. We observe a strong reduction of the luminescence intensity with increasing Te coverage in the (100)-oriented samples. The Te-induced luminescence reduction is, however, much smaller in the (311)A oriented samples. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119597
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    Paper (German National Licenses)
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