Library

X
You have 0 saved results.
Mark results and click the "Add To Watchlist" link in order to add them to this list.
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependent mobility in single-crystal and chemical vapor-deposited diamond (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2888-2894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combined electron and hole mobility of a single-crystal type IIa natural diamond and a polycrystalline diamond film deposited by chemical vapor deposition (CVD) were measured using transient photoconductivity as a function of excitation density (1013–1017 cm−3) and temperature (120–410 K). In natural diamond the temperature dependence suggests that the mobility is limited by phonon scattering at low free carrier densities, and by electron-hole scattering at high densities. The combined electron and hole phonon-limited mobility at room temperature is 3000 (±500) cm2/V s. In the CVD film, the mobility at room temperature was estimated to be 50 cm2/V s at low excitation densities. The temperature dependence of the mobility-lifetime product at low excitation densities is different from that of natural diamond, and suggests that charged center scattering, rather than acoustic phonon scattering, is the dominant effect. High densities of nitrogen and dislocations are known to be present in the natural diamond, and these appear to be the dominant recombination sites which limit the carrier lifetime. In the polycrystalline film a variety of structural defects and impurities are believed to exist, but it is unknown which of these dominates the transport and recombination properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353018
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Absolute x-ray power measurements with subnanosecond time resolution using type IIa diamond photoconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 124-130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductive devices have been fabricated from type IIa diamonds. The sensitivity of these devices is independent of photon energy from 200 to 2200 eV. The dynamic range is 105. The large band gap of the diamond greatly reduces the sensitivity to photons with an energy less than 5.5 eV which is an attractive feature for many applications. The carrier lifetime in the material is 90 ps and the mobility is 1650 cm2/V/s at 106 V/m.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347104
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Particle- and photoinduced conductivity in type-IIa diamonds (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1086-1095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics associated with radiation detection were measured on single-crystal natural type-IIa diamond using two techniques: charged particle-induced conductivity and time-resolved transient photoinduced conductivity. The two techniques complement each other: The charged particle-induced conductivity technique measures the product of the carrier mobility μ and lifetime τ throughout the bulk of the material while the transient photoconductivity technique measures the carrier mobility and lifetime independently at the first few micrometers of the material surface. For each technique, the μτ product was determined by integration of the respective signals. The collection distance that a free carrier drifts in an electric field was extracted by each technique. As a result, a direct comparison of bulk and surface electrical properties was performed. The data from these two techniques are in agreement, indicating no difference in the electrical properties between the bulk and the surface of the material. The collection distance continues to increase with field up to 25 kV/cm without saturation. Using the transient photoconductivity technique the carrier mobility was measured separately and compared with a simple electron-phonon scattering model. The general characteristics of carrier mobility, lifetime, and collection distance at low electric field appear to be adequately described by the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354957
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Soft x-ray detection with diamond photoconductive detectors : Proceedings of the 8th Topical Conference on High−Temperature Plasma Diagnostics (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2765-2767 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Photoconductive detectors (PCDs) fabricated from natural IIa diamonds have been used to measure the x-ray power emitted from laser-produced plasmas. The detector was operated without any absorbing filters which distort the x-ray power measurement. The 5.5 eV band gap of the detector material practically eliminates its sensitivity to scattered laser radiation thus permitting filterless operation. Excellent agreement was achieved between a diamond PCD and a multichannel photoemissive diode array in the measurement of radiated x-ray power and energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141824
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    A Fourier transform microscope for x-ray imaging : Proceedings of the 9th topical conference on high temperature plasma diagnostics (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5089-5093 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This is a progress report on development of a new x-ray imaging system, called a Fourier transform microscope, intended for use with x-ray emitting targets in laser fusion experiments. It is being built by Naval Research Laboratory and Lawrence Livermore National Laboratory. The system works at energies from 3 to 7 keV. We describe the development of the design, which utilizes fine etched grids to extract Fourier amplitudes for the source brightness distribution at selected spatial frequencies. The finest grids in the prototype system will have rib dimensions of 2 μm. The prototype system is expected to achieve position resolution of 4 μm in 3–7 keV. Simulations of the expected imaging performance are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143501
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Spatially resolved measurement of lattice damage in alpha-particle-irradiated type IIa natural diamond by confocal photoluminescence microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4050-4053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Confocal fluorescence microscopy has been used to measure the three-dimensional distribution of the H3 color center produced in type IIa natural diamonds by 5 MeV He+ irradiation at a total fluence of 8×1015 cm−2. The peak of the H3 emission occurs 16 μm below the surface of the irradiated side of the diamond, which is in fair agreement with the peak of the vacancy distribution predicted by a Monte Carlo calculation (transport of ions in matter or trim). The H3 distribution is broader in the direction normal to the surface (10 μm full width at half maximum) than the trim calculation. This is attributed to diffusion of vacancies caused by self-annealing during irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357353
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Carrier density dependent photoconductivity in diamond (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 623-625 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal natural diamonds have been intrinsically photoexcited using 2 ps laser pulses. Electron and hole mobilities and decay times are examined as a function of induced carrier density. Two major density dependent effects are observed. First, at high induced carrier densities, a dramatic decrease in the carrier mobility is observed. This is attributed to carrier-carrier scattering between the electrons and the holes. A model describing carrier-carrier scattering in silicon and germanium has been scaled to diamond. Second, the decay time of the electrons decreases as the initially photoexcited density increases. A simple one-level recombination model successfully explains this density dependence. The combination of these two effects results in a minimum in the measured photoconductive decay times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103616
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Measurement of single 14 MeV neutron bursts with 100 ps time resolution (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1988-1989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have constructed a detector using neutron-damaged GaAs and used it to measure subnanosecond 14 MeV neutron bursts from laser-driven deuterium-tritium filled microspheres. The detector's very fast response (measured to be 60 ps full width at half-maximum) is due to the phenomenon of radiation-induced conductivity. The absolute sensitivity of the detector has been measured and is in excellent agreement with Monte Carlo calculations. We have also verified that the dectector is linear with neutron flux over two orders of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100341
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Heating of a dense plasma using a relativistic electron beam (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1748-1752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out an experiment to measure the heating of a dense carbon plasma, ne∼1018–1019 cm−3, by a relativistic electron beam. Using spectroscopic methods, the temperature of the plasma was measured. By taking into consideration the heat loss mechanisms in the plasma, the amount of energy deposited into the plasma by the beam was determined. The results are consistent with theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341770
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Flat response detectors for the vacuum ultraviolet and soft x-ray region: InP:Fe photoconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2596-2599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that InP:Fe photoconductive detectors are sensitive to radiation between 20 and 3000 eV. Within experimental error the measured response is flat in this energy range, in agreement with theory. This property, coupled with the simplicity and high speed (full width at one half maximum of less than 200 ps) of these devices, makes them very interesting for the measurement of pulsed vacuum ultraviolet and x-ray radiation and the total instantaneous integrated radiative power emitted from a pulsed source. Low fidelity response can occur in these devices for excitation times that are many times longer than the primary response time of the detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337127
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...