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  • 1
    Electronic Resource
    Electronic Resource
    Low leakage current characteristics of YMnO3 on Si(111) using an ultrathin buffer layer of silicon oxynitride (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6598-6604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown YMnO3 (YMO) thin films on Si(111) using silicon oxynitride (SiON) as a buffer layer. Thickness of SiON buffer layer was well controlled within 2 nm. High resistance of ultrathin SiON layer (dSiON∼0.7 nm) to Si oxidation was confirmed by x-ray photoelectron spectroscopy (XPS). Using the ultrathin SiON layer, we obtained c-axis oriented ferroelectric phase of YMO. Although capacitance–voltage curves of Al/YMO/SiON/Si(111) showed hystereses attributed to ferroelectricity of the YMO films, the memory window was not sufficient (0.2 V), seemingly due to poor crystallinity of the YMO films. On the other hand, leakage current characteristic was good enough for application. The typical value of leakage current density was 10−8 A/cm2 at a drive voltage of ±5 V. In this article, the details of the characterization elucidated by using x-ray diffraction, atomic force microscopy, and XPS will be shown as well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315614
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  • 2
    Electronic Resource
    Electronic Resource
    Ferroelectric behavior of epitaxial Bi2VO5.5 thin films on Si(100) formed by pulsed-laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1193-1195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Bi2VO5.5 have been prepared epitaxially using a pulsed-laser deposition method on a Si(100) substrate using TiN as a buffer layer and SrTiO3 as a seed layer. The films have smooth surface morphology with atomically flat terraces and steps of 4 Å in height. The ferroelectric characterization shows a spontaneous polarization of 2.2 μC/cm2 and a coercive field (Ec) of 22 kV/cm. The leakage current obtained is about 5×10−6 A/cm2 at a drive voltage of ±2 V. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373798
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of YBa2Cu3O7−y/BaTiO3 multistructures by pulsed laser deposition for high-temperature superconducting device applications (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 554-556 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of YBa2Cu3O7−y(YBCO)/BaTiO3(BTO)//SrTiO3(STO) (100) and BTO/ YBCO//STO(100) bilayer structures is demonstrated for the construction of a superconductor ferroelectric field transistor. The resulting films of the bilayers have highly c-axis oriented structure. Epitaxial YBCO films formed on the BTO//STO(100) have a zero resistance temperature of 88.9 K. The surface morphology of the epitaxial BTO films on the YBCO//STO is very smooth with a mean surface roughness of 32 A(ring). Moreover, the Au/BTO/YBCO structures have been fabricated, and the dielectric constant and remanent polarization of BTO layer are obtained to be 180 and 3.5 μC/cm2 at 77 K, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115167
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  • 4
    Electronic Resource
    Electronic Resource
    Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2534-2536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Li-doped ZnO of different compositions (Zn1−xLix)O, x=0.1, 0.17, and 0.3 have been prepared on Si(100) substrates, with no buffer layer, by the pulsed laser deposition method. Ferroelectric behavior with a memory window of 1.2 V has been observed in capacitance–voltage measurements. The peak maximum in the capacitance–temperature curve suggests that the ferroelectric phase transition occurs around 340 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123889
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  • 5
    Electronic Resource
    Electronic Resource
    Two-dimensional assembly of gold nanoparticles with a DNA network template (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1181-1183 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold nanoparticles have been assembled into two-dimensional complexes using a DNA network template. Atomic force microscope images indicate that gold nanoparticles can be artificially arranged using a DNA molecular template with an average separation of 260 nm. Furthermore, the pattern of the complex can be controlled by changing the concentration of the DNA solution. The results suggest that this method is effective in achieving positional control of nanoscale arrangements for a wide range of applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396630
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic ordering in the LaFe0.5Mn0.5O3 solid solution film (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 512-514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: LaFe0.5Mn0.5O3 solid solution films have been formed on SrTiO3 (111) substrates using a pulsed laser deposition technique and their magnetic properties have been examined. The films showed ferromagnetic (or ferromagnetic) behavior with a Curie temperature of 380 K and the saturation magnetization was estimated to be about 1.5μB per magnetic ion site (B site). The x-ray photoemission spectra indicated that this behavior was due to the partial ordering of magnetic ions (Fe and Mn ions) which is caused by the charge disproportion between Fe and Mn ions under the film formation conditions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343844
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  • 7
    Electronic Resource
    Electronic Resource
    Photocontrol of spin-glass state in Mg1.5FeTi0.5O4 spinel ferrite films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1179-1181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A spin-glass state up to 210 K has been found in (Mg, Fe){Mg,Fe,Ti}2O4 spinel ferrite thin films formed on α-Al2O3(0001) substrates. The films exhibit long-time relaxation of the magnetization in zero-field-cooled operation below 210 K; also, the ac susceptibility measurements show the presence of frequency-dependent cusp temperature. Both of the above observations are characteristic features of a spin glass. The change of magnetic state in the films from a spin glass to ferrimagnet has been achieved over a wide temperature range below 160 K by means of light irradiation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125975
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 403-405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of ferroelectric Bi4Ti3O12 (BiT) films on Si(100) using a 1 nm thick silicon oxynitride (SiON) buffer were investigated. The capacitance–voltage (C–V) characteristics of Au/BiT/SiON/Si(100) exhibited hysteresis loops with a memory window of 2 V due to the ferroelectricity, and did not show large carrier injections. The effects of the SiON buffer were demonstrated in current–voltage characteristics. In the reverse bias region, a leakage current density of the specimen without the SiON buffer was much larger than that of the specimen with the buffer. Apart from these electrical measurements, anomalous features appeared in C–V characteristics of the illuminated specimen, which were likely to be due to the ac response of the optically generated electrons in some trap states at the interface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385799
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  • 9
    Electronic Resource
    Electronic Resource
    Interface control of Bi4Ti3O12 film growth on Si(100) by use of an ultrathin silicon oxynitride buffer layer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1858-1860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of Bi4Ti3O12 (BiT) films on Si(100) were improved due to insertion of silicon oxynitride (SiON) buffer layers with thicknesses of 1–2 nm. Capacitance–voltage measurements indicated that the improvement was largely attributable to better Si interface properties rather than to the difference of the BiT film quality. By means of x-ray photoelectron spectroscopy and high-resolution transmission microscopy, the Si interfaces of the specimens with and without the SiON buffer layers were investigated. Consequently, we found that a postannealing treatment at 680 °C inevitably resulted in nonuniform growth of Si oxide layers at the Si interface of the specimen without the SiON buffer layer, and that the layer thickness mounted to approximately 10 nm. In contrast, 1–2-nm-thick SiON buffer layers terminated the growth of the additional oxide layer of less than about 3 nm, and the resulting Si oxide layers were quite uniform. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400078
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  • 10
    Electronic Resource
    Electronic Resource
    Optimization of electronic-band alignments at ferroelectric (ZnxCd1−x)S/Si(100) interfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3283-3285 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have obtained ferroelectric characteristics from nonoxide (ZnxCd1−x)S (x=0.1–0.3) thin films. On the basis of x-ray photoelectron and visible–ultraviolet light absorption spectroscopy measurements, the conduction-band discontinuity at the (ZnxCd1−x)S/Si(100) interfaces is found to vary between 0.4 and 1.3 eV with a change in composition x between 0.1 and 0.9. The leakage current density, which strongly depends on the conduction-band discontinuity, is reduced to less than 10−6 A/cm2 at a gate voltage of 4 V. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356724
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