Library

X
You have 0 saved results.
Mark results and click the "Add To Watchlist" link in order to add them to this list.
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Ion-beam induced oxidation of GaAs and AlGaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3010-3022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of GaAs and AlxGa1−xAs targets by oxygen irradiation has been studied in detail. It was found that the oxidation process is characterized by the strong preferential oxidation of Al as compared to Ga, and of Ga as compared to As. This experimental observation, which has been accurately quantified by using x-ray photoelectron spectroscopy, is connected to the different heats of formation of the corresponding oxides. The oxide grown by ion-beam oxidation shows a strong depletion in As and relatively low oxidation of As as well. The depletion can be associated with the preferential sputtering of the As oxide in respect to other compounds whereas the low oxidation is due to the low heat of formation. In contrast Al is rapidly and fully oxidized, turning the outermost layer of the altered layer to a single Al2O3 overlayer, as observed by transmission electron microscopy. The radiation enhanced diffusion of oxygen and aluminum in the altered layer explains the large thickness of these altered layers and the formation of Al oxides on top of the layers. For the case of ion-beam oxidation of GaAs a simulation program has been developed which describes adequately the various growth mechanisms experimentally observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358650
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, HI) solutions (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1323-1325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface reactivity of hydrogen-passivated, HF-last-cleaned Si(100) toward aqueous HX and HF/HX (X=Cl, Br, I) is examined. The HCl and HBr solutions are found to leave the HF-cleaned bare Si surface unaltered, while the HI solution reoxidizes the hydrogen-passivated surface. Treatments in aqueous HF/HCl or HF/HBr solutions lead to the same surface passivation and surface microroughness as for HF-cleaned surfaces. In the HF/HI solution, a simultaneous oxidation and etching process takes place, resulting in an increased (111) microfaceting of the Si(100) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358938
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2565-2574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of Si based materials for optoelectronic applications is hampered by the indirect nature of the band gap. One possible solution by which to improve the radiative light emission is three-dimensional Stranski–Krastanow growth of Si1−xGex or pure Ge on top of Si. In this article we give a detailed overview about the growth kinetics observed for Ge growth in a standard production oriented chemical vapor deposition system. With increasing deposition time, we observed the usual changeover from monomodal to bimodal island distribution. The island morphology and density can be controlled by varying the growth conditions or by applying a thermal anneal after island growth. Island densities up to 2.3×1010 cm−2 have been obtained for depositions at 650 °C. A Si cap layer is needed for photoluminescence measurements as well as for some device structures. However, Si capping at 700 °C leads to nearly total dissolution of small islands and truncation of bigger dome-shaped islands. This can be prevented by reducing the deposition temperature and by changing the Si gas source. Photoluminescence measurements demonstrate the high layer quality of Si capped islands by the clear separation between the no-phonon line and the transversal optical (TO) replica and the high peak intensities. The spectral range of the island luminescence is between 1.35 (920 meV) and 1.50 μm (828 meV) and depends on the growth conditions. At 20 K, we found up to 70 times higher values for the integrated no-phonon and the TO luminescence from the islands, compared to the integrated intensity from the Si TO peak. Nevertheless, the high photoluminescence intensity can be further enhanced by a thermal treatment in a H2 plasma. Clear island luminescence up to 200 K has been observed after such thermal treatment, which shows the potential of this material system for optoelectronic device applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389335
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Two-step room temperature grain growth in electroplated copper (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3642-3645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroplated copper exhibits some surprising changes at room temperature in sheet resistance, stress, and microstructure. This behavior, now known as self-annealing, is shown here to be intimately linked to the composition of the plating bath and the resulting incorporation of organic additives in the Cu layer. Their addition is a necessary condition for self-annealing to occur, but slows down the process for higher concentrations. The phenomenon also depends critically on film thickness, showing an accelerated transformation when film thickness increases. This dependence is explained in terms of a very rapid primary crystallization from the top surface down just after deposition, followed by a slower lateral recrystallization producing large secondary grains. The stress and sheet resistance during recrystallization are identified as two noncorrelated variables. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371272
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    The influence of oxygen on the analysis of a Pt/Si structure with secondary ion mass spectrometry (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4649-4659 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The introduction of oxygen during analysis with secondary ion mass spectrometry (SIMS) is an important tool to reduce ion beam induced topography, to enhance positive ion yields, and to remove transient effects during shallow and multilayer profiling. Its main drawback, however, is that due to the tendency of some elements to segregate towards the internal SiO2/Si interface (formed by an oxygen primary beam), large profile distortions can occur. In this work, the influence of oxygen pressure on the measurement of the Pt/Si structure is investigated and its relation to the observed SIMS depth profile is established. In the low pressure regime (leading to incomplete oxidation of Si), the profile disturbances occur in the interface region and are totally the result of ionization variations. The depth at which these disturbances are seen, as well as as the magnitude of the variations, are strongly dependent on the oxygen pressure in relation to the primary current density. The latter can be explained by the competition for the Si atoms between the formation of a Pt-Si alloy and an oxide. For high pressures where Si is completely oxidized, two regimes are observed. In the first regime, when the sample still contains a large amount of Pt, a large decay length is observed, representative of the strong segregation toward the SiO2/Si interface. In a later stage, when the amount of Pt has been reduced, the decay length decreases significantly suggesting that the segregation disappears. Internal depth profiling has shown that the two decay lengths can be correlated with two different internal Pt distributions, whereby the longest decay length corresponds to a Pt accumulation in the interface region. This correlation is in agreement with theoretical predictions about the role of the internal distribution on the SIMS decay length. The work also revealed that the polarity of the detected ions has a pronounced influence on the segregation caused by field-induced migration. This segregation depended strongly on the oxidizing conditions, suggesting the formation of higher quality oxides under higher oxygen pressures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352760
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Oxygen distribution in silicon-on-insulator layers obtained by zone melting recrystallization (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7337-7347 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxygen content in zone melting recrystallization silicon-on-insulator (ZMR SOI) layers with thicknesses ranging between 0.5 and 25 μm obtained with a movable lampheater is studied. Secondary-ion-mass spectrometry profiling as well as numerical calculations are presented. The simulations are based on oxygen redistribution during cooling down. In the model it is assumed that the interface reaction is fast enough to be not the rate-limiting step in the redistribution process. Consequently, the oxygen transport was considered to be entirely diffusion limited. Good agreement was found between the measurements and calculated values. The profiles show a maximum at the center of the layer and symmetrically depleted regions in the top and bottom of the silicon film. It has been generally accepted that ZMR SOI layers have a high oxygen concentration corresponding to the saturation level at melting point. In the present study, however, we show that in the 0.5-μm layers the oxygen concentration is as low as 1×1017(O atoms)/cm3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344520
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Mass and energy dependence of depth resolution in secondary-ion mass spectrometry experiments with iodine, oxygen, and cesium beams on AlGaAs/GaAs multilayer structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1531-1533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of an I+2 and I+ primary ion beam in secondary-ion mass spectrometry measurements was studied to investigate its depth profiling properties. A comparison with the results of a Cs+, O+2, and O+ primary beam was made. Experiments were performed with low impact energy (down to 1.7 keV) and glancing angle of incidence on molecular beam epitaxy AlGaAs-GaAs multilayer structures. The best obtainable decay length of the Al+ signal with an iodine primary beam is 1.1 nm. At low impact energies, no mass dependence on the depth resolution is observed. In these conditions, a useful yield for Al+ of approximately 5×10−5 was obtained with the Cs+ beam and 10−2 with the iodine and oxygen beams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101341
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effects (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2856-2858 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative comparison is made of the junction depths determined by spreading resistance (SR) and secondary-ion mass spectrometry (SIMS) for submicron abrupt pn junctions (grown by molecular beam epitaxy) and Gaussian implants. The discrepancies between SR and SIMS are explained in terms of carrier spilling. From the comparison with a theoretical model, general trends can be adequately explained. In order to overcome the uncertainties imposed by the boundary conditions in this model, experimental diagrams are derived which can be used in routine analysis to assess the importance of carrier spilling effects in SR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103761
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Influences of trace metal impurities on the thermal quenching of photoluminescence in hydrogenated amorphous silicon by homogeneous chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1591-1593 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of trace metal impurities of low-temperature undoped amorphous silicon by homogeneous chemical vapor deposited a-Si:H has been explored for the first time. The metal impurities Ni, Cr, and Fe cause a shift of the transition temperature for the double-activated regime to a relatively low value. However, Ga and B impurities quench the photoluminescence intensity at a low temperature. Both of them cause weak photoemission of the films at room temperature. The shift of the transition temperature can be explained by the presence of non-radiative deep recombination centers. The quenching of the photoluminescence intensity is caused by the presence of nonradiative recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103137
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1922-1924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of phosphorus-doped silicon deposited at 250 °C from a radio-frequency glow discharge from SiH4 is demonstrated by high-resolution electron microscopy (HREM) and spreading resistance profile measurements. Thin epitaxial films are present at the interface between (100) Si substrates and hydrogenated amorphous silicon. After recrystallization at 700 °C, single-crystal layers are obtained, in which HREM reveals extensive twinning. The fact that epitaxial growth can take place at 250 °C in a system with a background pressure of only 5×10−6 mbar can be attributed to the presence of species in the SiH4 plasma that reduce the native oxide and the use of HF in the cleaning procedure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98301
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...