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  • 1
    Electronic Resource
    Electronic Resource
    Photoreflectance mapping of InAlAs Schottky diode layer on InAlAs/InGaAs high electron mobility transistor wafers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 374-379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The uniformity of surface layer characteristics of InAlAs Schottky diodes, the so-called level-shift diodes, on InAlAs/InGaAs high electron mobility transistors is noninvasively examined by photoreflectance (PR) spectroscopy, on-wafer mapping of PR signal intensity at a particular wavelength, and analyzed data. From the observed Franz–Keldysh oscillations, we have been able to evaluate the built-in dc electric fields in the i–n+, or so-called UN+, InAlAs Schottky diode layer. The on-wafer fluctuation of the electric fields in the diode layer, which is due to the fluctuation of the thickness of the diode layer, is clearly visualized by on-wafer mapping. Nonuniform composition of the InAlAs diode layers is also observed. The shape of the contour lines in the map of the PR signal intensity is related to the structure of the growth equipment. Our results suggest that photoreflectance mapping is quite effective for noninvasive screening of device epiwafers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370741
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  • 2
    Electronic Resource
    Electronic Resource
    In situ observation of molecular beam epitaxy of GaAs and AlGaAs under deficient As4 flux by scanning reflection electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 622-624 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stages of molecular beam epitaxial (MBE) growth of GaAs and AlGaAs are directly observed by scanning reflection electron microscopy. Under deficient As4 flux, it is shown that dark areas appear within several layers of growth, but disappear within several seconds of growth interruption, indicating that they are droplets of Ga and Al. The distance between the droplets is approximately 1 μm, which is identical in GaAs and AlGaAs growth. Thus, the diffusion length of Ga and Al on a group III-rich surface at around 600 °C is estimated to be about 5000 A(ring), which is the largest among previous reports. The role of droplet disappearance in interface flattening in alternating supply MBE is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101829
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon reduction in GaAs films grown by laser-assisted metalorganic molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 451-453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary-ion mass spectroscopy and cathodoluminescence (CL) studies were carried out on GaAs films grown by Ar+ laser-assisted metalorganic molecular beam epitaxy. The Ar+ laser irradiation leads to the formation of a 400-μm-diam spot. In the growth temperature range 425–500 °C, the carbon concentration within the spot is maintained at 1017 cm−3, while that in the area not irradiated by the laser increases from 1017 to 1019 cm−3. The process of decomposition of the triethylgallium molecules and the mechanism by which the carbon concentration is maintained by the laser irradiation are discussed in detail. Low-temperature CL spectra revealed that the CL signal intensity in the selectively grown spot was some ten times greater than that in the area not irradiated by the laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101872
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  • 4
    Electronic Resource
    Electronic Resource
    Cathodoluminescence study of substrate offset effects on interface step structures of quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 436-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface structures of single quantum wells grown on vicinal (100) substrates with a controlled offset 0.2° are studied by cathodoluminescence microscopy. Bright and dark stripe patterns are periodically observed in monochromatic images of the single quantum wells and the stripes replicate stair-like stepped interfaces. It is further shown that the observed terrace width is several times larger than the average interstep distance of monolayer steps calculated from the offset angle and that the step height is not one monolayer. Based on the results, a new interface structure model has been proposed that takes the offset angle into account. Finally, it is shown that employing growth interruption during epitaxial growth as an interface smoothing technique has limitations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100944
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of scanning deep level transient spectroscopy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1617-1619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fundamental processes such as charge generation, trapping and emission, and collection in scanning deep level transient spectroscopy (SDLTS) are analyzed. It is concluded that SDLTS is more sensitive to minority-carrier traps than to majority-carrier traps and that a two-dimensional map of SDLTS peak signal magnitude, i.e., SDLTS image, of minority-carrier traps does not necessarily show the trap concentration distribution. A practical equation for trap concentration is derived by utilizing an electron beam induced current. Concentration of a hole trap with an activation energy 0.45 eV in an n-type as-grown liquid encapsulated Czochralski GaAs is calculated to be 1×1016 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98573
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  • 6
    Electronic Resource
    Electronic Resource
    Low temperature annealing of ion-implantation-induced defects in GaAs by minority carrier injection (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2525-2527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter demonstrates that minority-carrier injection entirely removes ion-implantation- induced defects in GaAs at temperatures as low as 200 °C, where no annealing is observed as a result of a simple thermal annealing. The enhancement mechanism is discussed within the framework of recombination-enhanced defect reaction. The present findings have opened the door to "room temperature semiconductor material processing.''
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110470
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 363-365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ridge quantum wire structure has been successfully fabricated on a patterned (001) GaAs substrate by first growing a (111)B facet structure with a very sharp ridge and then depositing a thin GaAs quantum well on its top. Electron microscope study has shown that a GaAs wire with the effective lateral width of 17–18 nm is formed at the ridge top. Photoluminescence and cathodoluminescence measurements indicate that one of the luminescence lines comes from the wire region at the ridge and its blue shift (∼60 meV) agrees with the quantum confined energy calculated for the observed wire structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111967
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  • 8
    Electronic Resource
    Electronic Resource
    Changes of cheek pressure during swallowing following expansion of the maxillary dental arch in repaired cleft palates (1975)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of oral rehabilitation 2 (1975), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Cheek pressure during swallowing was measured on six operated complete cleft lip and palate cases (4–8 years of age) before and after expansion of buccal segments of maxillary arch, As control, seven non-cleft subjects with acceptable occlusion of the same age level were used. Before expansion, the pressures in the cleft cases were much higher than the controls. Immediately after expansion, increase in pressure was observed in cases which received rapid expansion. However, a few months after expansion, most cases showed a decrease in pressure. This is explained as being due to the adaptation of the perioral musculature to the expanded dental arch and/or the disappearance of hyperactivity of the perioral musculature during swallowing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2842.1975.tb01525.x
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of acid suppression therapy on development of gastric erosions after cure of Helicobacter pylori infection (2002)
    Oxford UK : Blackwell Science Ltd.
    Alimentary pharmacology & therapeutics 16 (2002), S. 0 
    Details
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Helicobacter pylori eradication markedly improves histological inflammation and decreases peptic ulcer recurrence, but little is known about the subsequent development of gastric mucosal injury.〈section xml:id="abs1-2"〉〈title type="main"〉Aim:To investigate whether acid suppression treatment after eradication influences the development of gastric erosions.〈section xml:id="abs1-3"〉〈title type="main"〉Methods:Eighty-one patients (gastritis or peptic ulcer) after successful H. pylori eradication were divided into two groups: 40 received an H2-blocker for 6 months (H2-blocker-positive) and 41 received no treatment (H2-blocker-negative). Endoscopy was performed before, and at 3 and 6 months after completion of eradication.〈section xml:id="abs1-4"〉〈title type="main"〉Results:Cumulative prevalence of gastric erosions in the H2-blocker-positive group was significantly lower than in the H2-blocker-negative group, 25% vs. 42%, respectively. In the H2-blocker-negative group but not the H2-blocker-positive group, the cumulative prevalence of gastric erosions after eradication was higher in patients with less severe corpus atrophy or more severe corpus gastritis.〈section xml:id="abs1-5"〉〈title type="main"〉Conclusions:Development of gastric erosions after H. pylori eradication may be controlled by acid suppression treatment. Less severe atrophy or more severe gastritis in oxyntic glands before eradication may be involved in the development of gastric erosions. These results support the idea that recovery of acid secretion may be one of factors for development of gastric mucosal erosions after successful eradication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2036.16.s2.14.x
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  • 10
    Electronic Resource
    Electronic Resource
    Preventive therapy for non-steroidal anti-inflammatory drug-induced ulcers in Japanese patients with rheumatoid arthritis: the current situation and a prospective controlled-study of the preventive effects of lansoprazole or famotidine (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Alimentary pharmacology & therapeutics 21 (2005), S. 0 
    Details
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background : There is a lack of evidence for the efficacy of preventive medications for peptic ulcers (PUs) among long-term users of non-steroidal anti-inflammatory drugs (NSAIDs) in Japan.Aim : To estimate the preventive effect by normal dose, not high-dose histamine-H2 receptor antagonists (H2RA) for NSAID-induced ulcers.Methods : We designed two different studies to assess the efficacy of anti-ulcer agents in rheumatoid arthritis (RA) in patients treated over a long term with NSAIDs. An investigative survey divided patients into those not taking anti-ulcer agents (non-medication group); those taking mucosal protective agents (mucosal protectant group), H2RA (H2RA group), proton pump inhibitors (PPI group), or a prostaglandin E1 analog (PG) (PG group). The second study compared prospectively the preventive effects of either famotidine 20 mg bd (famotidine group) or lansoprazole 15 mg daily (lansoprazole group) in patients with PU scars.Results : The prevalence of PU in the H2RA group was significantly lower compared to the mucosal protectant group (P 〈 0.05), and the mucosal protectant group was not significantly different to the non-medication group. The prospective study revealed that the PU onset rate of the famotidine group was 8% (1/13), and lansoprazole group was 15% (2/13), indicating no significant differences between the two.Conclusions : In Japan, normal-dose H2RA is expected to be a new PU preventive treatment strategy in patients requiring long-term NSAID therapy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2036.2005.02477.x
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