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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 2637-2641 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 6-7 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1543-1546 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Extraction of infrared beams from SPring-8 storage ring is investigated. SPring-8 is a third generation insertion device oriented synchrotron radiation source in x-ray region. It is noticeable, however, that a highly powerful radiation source in infrared region can be obtained from the bending magnet because of the large bending radius of 40 m. In this wavelength region, SPring-8 storage ring has a very sharp natural collimation in the vertical direction and the source size is very small. Extraction of infrared radiation in wavelength of 2–25 μm was designed. Source is a bending magnet and a water-cooled copper mirror is incorporated into the crotch laid just downstream by the bending magnet. The design of crotch and the transport system is carried out.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4438-4444 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A small scale inductive pulsed power (IPP) generator with copper wire fuses as an opening switch has been applied to an argon gas-puff z-pinch plasma which can be used as a point source for x-ray lithography. The IPP generator with fuses supplies a driving current of 60 kA in 400 ns to the z-pinch plasma. Without fuses, the generator serves as a conventional fast bank (FB) system which supplies z-pinch current of 60 kA in 4.5 μs. Characteristics of the z-pinch implosions in IPP and FB systems are investigated and compared. The result obtained shows that the intensity of soft x rays emitted from hot spots in both systems is decreased gradually with longer delay time, which is the time difference between energizing a gas-puff actuator and a primary current trigger. Dual axis pinhole imagery shows that the hot spot size is 0.8 mm in diameter in both systems. However, the average radial displacement of hot spots is 0.9 mm in the FB system and it is reduced to 0.4 mm in the IPP system. Optical framing camera images have confirmed that the radial distribution of hot spots is due to kink instability. The framing images also show that the imploding plasma in the FB system which has a pinch size of 2.2 mm in diameter can be further compressed to 1.3 mm. The IPP system can suppress the kink instability of pinch plasma and increases plasma column uniformity along the z axis. This suggests that the IPP system can improve the stability of the pinched plasma so as to minimize the end-on source size for x-ray lithography applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5664-5666 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of ultrahigh-density recording higher than 10 Gb/in.2 with perpendicular magnetic recording is investigated by computer simulation for a ring-type head and single-layer medium combination. A nucleation model is used as a media model because it incorporates a nucleation site, which causes irreversible magnetization switching. Fundamental read–write characteristics are found to be entirely different from those of longitudinal recording. Recorded magnetization strongly depends on head field strength; the maximum magnetization appears around the head field strength of media coercivity, and beyond this the recorded magnetization decreases abruptly. Spacing loss in the recording process also depends on head field strength and recording density. However, saturation recording can be attained even at an ultrahigh recording density of 600 kFCI with a spacing of 30 nm. Also, a higher signal-to-noise ratio than in longitudinal recording can be obtained by introducing weak intergrain exchange interaction with a relatively large grain size in the media film. This suggests that perpendicular magnetic recording is stable in thermal fluctuation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7377-7383 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma hydrogenation of laser-crystallized and -amorphized films was investigated. The hydrogen concentration was determined to be 1.5 at. % using a method of laser-induced hydrogen effusion for 20-nm-thick crystallized films which were hydrogenated at 250 °C for 30 s. The defect density was reduced from 1×1017 to 4×1016 cm−3. The hydrogen concentration was 2.5 at. % for amorphized films of 12 nm-thickness. This low hydrogen concentration resulted in a low optical band-gap energy of 1.7 eV for amorphized films, while the width of the Urbach tail was 0.06±0.005 eV, which is close to that of hydrogenated amorphous silicon (a-Si:H) films fabricated using radio-frequency glow discharge (rf GD). The defect density of the laser-amorphized silicon films was reduced from 2×1020 to 4×1015 cm−3 eV−1 comparable to a-Si:H films fabricated by rf GD. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simulations of hexagonal magnetic particles with uniform exchange energy and random c-axis in-plane orientation do not reproduce real media magnetic properties. Simulation software was thus modified to model four experimentally observed Co-alloy microstructures, to distinguish the effects of grain size, cluster size, exchange decoupling, and cluster substructure; and to more accurately model real media behavior. Results include: (1) Clusters of isolated uniaxial particles act like single grains having the cluster size. Exchange decoupling on a size scale smaller than the crystallographic grain size has little effect upon hysteresis loops or media noise. (2) The magnetic properties of clustered bicrystal and randomly oriented media depend on the exchange interactions within and between clusters of grains. Media hysteresis loops and recorded tracks are well simulated using exchange energies within randomly oriented or bicrystal grain clusters up to ten times larger than those used in the standard model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1719-1721 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper outlines the status of a 6-GeV synchrotron radiation designed at RIKEN. This facility consists of a main storage ring, a booster synchrotron, a 1.5-GeV preinjector linac, positron injection linacs, and others. The electronan GeV. The storage ring has a circumference of 1069.2 m and 7-m-long straight sections for insertion devices. The lattice of the main ring is a Chasman–Green-type one and has 36 periodicity. The low emittance (εx=8.2 nm rad) and large dynamic aperture are expected even with field errors and misalignments of magnetic elements. Three years of a preconstruction research and development period and 5 years of construction period are scheduled.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1866-1868 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Radiation losses from the main plasma of the JAERI Tokamak-60 (JT-60) were measured by a 15-channel bolometer array and those from divertor chambers in the ion and electron drift sides were each measured by two bolometers. The bolometric detector consisting of three layers (5-μm-thick gold absorber, 7-μm-thick polyimide foil, and 0.1-μm-thick gold resistor grid) was developed for this measurement. In typical diverted discharges with NB heating, the ratios of power radiated from the main and divertor chambers to the absorbed power were approximately 10% and 20%, respectively. Intense poloidal asymmetries of radiated power localized near the X point outside the torus were observed in diverted discharges. The profiles of the radiated power were reconstructed by an Abel inversion with an asymmetric term. On the other hand, a poloidally asymmetric radiation band localized near the inner wall, "marfe,'' was observed for dense plasmas in limiter discharges with neutral beam heating.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1018-1020 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reactive evaporation of SiO in an oxygen atmosphere was investigated for forming a good interface of SiO2/Si. SiO2 films are formed at room temperature by evaporation of a SiO powder in an oxygen atmosphere with a flow rate of 2 sccm at a pressure of 1×10−4 Torr. The interface trapping density at SiO2/Si was lower than 5×1010 cm−2 eV−1. n- and p-channel Al-gate polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated at 270 °C with the present SiO2 films as a gate oxide and laser crystallized poly-Si films formed using a pulsed XeCl excimer laser. They showed good characteristics of a low threshold voltage of 1.1 V (n-channel) and −1.2 V (p-channel), and a high carrier mobility of 450 cm2/V s (n-channel) and 270 cm2/V s (p-channel).
    Type of Medium: Electronic Resource
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