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  • 1
    Electronic Resource
    Electronic Resource
    Texture-induced asymmetric reactions in TiN/Al–Cu/TiN (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7419-7421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally induced reactions in TiN/Al–Cu/TiN have been investigated. It is observed that the amount of the reactions is different at the two interfaces between Al–Cu and TiN. While there is minimal reaction between Al–Cu and the TiN overlayer, the reaction between Al–Cu and the TiN underlayer increases the sheet resistance of Al–Cu by as much as 15%. It is further shown that the asymmetric reactions are most likely caused by the different degree of (111) texture of TiN grown on amorphous SiO2 and textured, polycrystalline Al–Cu. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360398
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  • 2
    Electronic Resource
    Electronic Resource
    Precipitate morphologies in heat-treated Czochralski silicon crystals (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3775-3778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three types of oxygen precipitate morphologies at 1050 °C have been identified to be plate-type, pyramidal, and polyhedral. This study was carried out using a set of slices with the same initial oxygen concentration but varying carbon concentrations. The morphology is shown to depend on carbon concentration and heat treatment. It is demonstrated that increasing carbon concentration tends to change the morphology from the plate to polyhedra and enhance the nucleation rate at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335590
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  • 3
    Electronic Resource
    Electronic Resource
    Generation and propagation of threading dislocations in GaAs grown on Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2862-2865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation and propagation of threading dislocations in GaAs grown on Si was studied by transmission electron microscopy. This study was conducted by analyzing dislocation structures in GaAs at various growth stages. The dislocation structure changes as the GaAs grows from initial islands to a thick film. These changes are explained by the following physical processes: (1) nucleation of dislocations in GaAs islands, (2) generation and propagation of threading dislocations during coalescence of initial GaAs islands and their subsequent growth, and (3) bending of threading dislocations under misfit-strain force and their interactions. The second process results in threading dislocations extending from the interface to the surface in thin films. The third process causes an improvement in near-surface quality in thick films. The iplication of this study in confining threading dislocations to near the interface is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345457
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  • 4
    Electronic Resource
    Electronic Resource
    Quantitative resonant tunneling spectroscopy: Current-voltage characteristics of precisely characterized resonant tunneling diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1256-1258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic comparison of precisely characterized resonant tunneling structures is presented. A self-consistent band bending calculation is used to model the experimentally observed resonant peak positions. lt is found that the peak positions can be accurately modeled if the nominal characterization parameters are allowed to vary within the measurement accuracy of the characterization. As a result, it is found that the asymmetries in the current-voltage characteristics are solely explainable by tunnel barrier thickness fluctuations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101355
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of post-growth annealing on patterned GaAs on silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2611-2613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of post-growth thermal annealing on the defect surface of patterned GaAs on silicon. Significant improvements in defect structure of the patterned GaAs were observed by transmission electron microscopy (TEM) after short anneal times (15 min) at temperatures as low as 750 °C. At anneal temperatures of 950 °C, long-range single-crystal lateral regrowth of the original polycrystalline GaAs deposited over the amorphous patterning mask was observed. Micro-Raman spectroscopic characterization of the GaAs grown on the oxide/nitride mask corroborated the TEM results by showing a significant improvement in the crystalline quality of patterned GaAs on silicon following post-growth annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100174
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of patterning on defect structure in GaAs grown on Si (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 288-290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we address the effectiveness of patterned growth in reducing defect density in GaAs on Si. Defect reduction is considered to be subject to the effect of edge profile and the density of defects in initial GaAs islands. Pattern edges (mask edges or large steps) are often the sites for generating microtwins/stacking faults. Mutual interaction of dislocations inhibits the gliding of dislocations to pattern edges, thus affecting the effectiveness of patterned growth in improving the epilayer quality. The study also shows that surface orientation influences the formation of misfit dislocations with a preferred Burgers vector. This observation is interpreted by considering the variation of misfit with different lattice planes across the interface between Si and "tilted'' GaAs lattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103716
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  • 7
    Electronic Resource
    Electronic Resource
    Generation of misfit dislocations in GaAs grown on Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 265-267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The misfit dislocation configurations in initial GaAs islands grown on silicon were studied by high-resolution electron microscopy. Misfit dislocations, especially 60° type and stacking faults, were observed to generate from near the edges of the islands. Large steps on the substrate surface were observed to help the nucleation of these dislocations. The presence of threading dislocations in thicker films is attributed to the misfit dislocation segments in initial GaAs islands. A mechanism is proposed to explain the propagation and multiplication of misfit dislocations during the coalescence of islands and their subsequent growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101924
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  • 8
    Electronic Resource
    Electronic Resource
    Defect structures at the GaAs/Si interface after annealing (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 130-132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution electron microscopy was applied to investigate the effect of post-annealing on the defect structure at the GaAs/Si interface. This study indicates that annealing results in dislocation rearrangement at the interface to form the majority of Lomer's dislocations with their Burgers vectors parallel to the interface. Dislocations with inclined Burgers vectors (type 2) at the interface after annealing are often observed at steps introduced by the substrate surface roughness. This observation is discussed in terms of the shrinking of stacking faults and microtwins and the preferential nucleation of both stacking faults (or microtwins) and type 2 dislocations at surface steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98591
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  • 9
    Electronic Resource
    Electronic Resource
    Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2393-2395 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si–C–N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si–C–N contain a relatively large 1s→π* peak, indicating that a substantial percentage of carbon atoms in the a-Si–C–N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young's modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si–C–N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409275
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of an Al/CaF2/Al/Si(111) structure (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 270-272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite their large lattice mismatch (∼25%), epitaxial CaF2 films have been grown on single crystal Al(111) on Si(111) by low temperature molecular beam epitaxy. X-ray diffraction shows that the orientations of the CaF2 are the same as those of the Al films, whether the orientations of the Al are the same rotated 180° or with respect to the underlying Si substrate. Furthermore, our successful fabrication of an epitaxial Al/CaF2/Al/Si(111) structure suggests that Al can be a useful conductor material in three-dimensional device integration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107966
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