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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1813-1815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≈7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2949-2954 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the static I–V characteristics and cavity modes in stacked double Nb/AlOx/Nb Josephson junctions. In junction stacks consisting of two junctions with identical critical currents Ic, the Ic vs H characteristics have been observed to deviate from the usual Fraunhofer pattern in the small junction limit; the data are consistent with a model involving a structural phase transformation to a triangular vortex lattice with increasing H. In a finite voltage state interlayer coupling leads to splitting of the Swihart mode, which manifests itself as Fiske steps with different voltage spacings. The results provide clear evidence that the two junctions in the stack do phase lock. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5379-5380 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Kaufman-type 5 cm convex gridded ion-beam source is characterized in terms of angle-resolved ion-beam current density and beam uniformity at various discharge currents, electromagnet currents, and acceleration potentials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2127-2131 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A sputtering deposition system has been developed to grow high-quality superconductor/insulator multilayers specifically for use in fabricating vertically stacked Josephson junctions. A unique feature of the design is the computer control of all parameters involved in the repetitive deposition of multilayers. The computer is interfaced with stepper motors that position the substrate, and shutter wheels. Additional computer controlled stepper motors allow in situ changing of up to five contact masks. The computer is also interfaced to a gas flowmeter that controls the partial pressure of the inert and reactive sputtering gases. High-quality, reproducible multilayer films have been produced and are described. Stacked Josephson junctions have been patterned with the multilayer films and some of their electrical characteristics are presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3422-3424 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed heating measurements on holes in a strained Ge/Si0.4Ge0.6 quantum well and electrons in a strained Si/Si0.7Ge0.3 quantum well in the temperature range 0.3–5.5 K. While a power law dependence of carrier temperature on current, Te∼Ia, was observed for both samples, the measured values for the current exponent are different: a=0.50±0.02 for the Ge sample and 0.40±0.02 for the Si sample. We attribute this exponent difference to the difference in their phonon dimensionality. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1631-1633 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the use of a miniature microwave Fiske cavity coupled to a Josephson junction oscillator to monitor the dynamic quasiparticle population created in the surrounding superconductor by incident x rays. An expression is obtained for the phase velocities of the TM modes supported by this structure. The design has the advantage of being inherently thick—sufficient to completely absorb low energy x rays and is potentially scalable to a pixilated device with a pixel size 50 μm in linear dimension. The device represents an alternative strategy to implement the dynamic microwave absorption approach suggested by Gulian and Van Vechten and subsequent variations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1069-1071 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37±2 μΩ cm. The residual resistance ratio (R300 K/R4.2 K) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1293-1295 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of oxide–semiconductor interfaces formed by wet thermal oxidation of a thin epitaxial AlAs layer. Photoluminescence (PL) from a quantum well in close proximity to the interface is monitored before and after oxidation. The normalized PL intensity was found to decrease roughly in proportion to the degree of completeness of the oxidation. The diminishing luminescence is attributed to the presence of trap states formed at the oxide–semiconductor interface formed during the oxidation process; hydrogen ion treatment is effective in the partial restoration of the luminescence. In addition to the traps, the oxidation process also "disorders" the material within ∼15 nm from the semiconductor–oxide interface, as revealed by transmission electron micrographs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 33 (1997), S. 0 
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 33 (1997), S. 0 
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : The purpose of this article is to discuss the importance of uncertainty analysis in water quality modeling, with an emphasis on the identification of the correct model specification. A wetland phosphorus retention model is used as an example to illustrate the procedure of using a filtering technique for model structure identification. Model structure identification is typically done through model parameter estimation. However, due to many sources of error in both model parameterization and observed variables and data, error-in-variable is often a problem. Therefore, it is not appropriate to use the least squares method for parameter estimation. Two alternative methods for parameter estimation are presented. The first method is the maximum likelihood estimator, which assumes independence of the observed response variable values. In anticipating the possible violation of the independence assumption, a second method, which coupled a maximum likelihood estimator and Kalman filter model, was presented. Furthermore, a Monte Carlo simulation algorithm is presented as a preliminary method for judging whether the model structure is appropriate or not.
    Type of Medium: Electronic Resource
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