ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
We detail a comprehensive approach to preparing epiwafers for bipolar SiC powerdevices which entails etching the substrate, growing a semi-sacrificial basal plane dislocation (BPD)conversion epilayer, polishing away a portion of that conversion epilayer to recover a smoothsurface and then growing the device epilayers following specific methods to prevent the reintroductionof BPDs. With our best processing, we achieve a BPD density of 〈 10 cm-2 and anextended defect density of 〈 1.5 cm-2. Specifics of low BPD processing and particular concerns andmetrics will be discussed in regard to process optimization and simplification
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.77.pdf
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