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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of polycrystalline Cd1−xMnxTe (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3459-3463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk polycrystalline cadmium manganese telluride, Cd1−xMnxTe, was manufactured in several compositions by a synthesis process. The structure of the obtained compounds was the characteristic zinc-blende polycrystalline pattern being the grain size 100±20 nm. These materials are manufactured to replace single-crystal compounds in some magneto-optical devices. The cut-off wavelength and the Verdet constant are the same as the single-crystals with identical composition. A polarized laser beam, after having passed through a sample of 0.76 mm thickness, was depolarized less than 2.5%, and 90% of its energy was spread into a 2° cone. Scattering of light is produced because of the polycrystalline structure of these compounds. Some scattering diagrams, due to the diffraction and Mie scattering in the polycrystalline grains are shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354521
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  • 2
    Electronic Resource
    Electronic Resource
    Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 189-194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growth temperature. At substrate temperatures lower than 300 °C amorphous or poorly crystalline Se-excess films are obtained, showing high resistivity (≈103 Ω cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single-crystal counterparts). At the higher growth temperatures, polycrystalline films are obtained (average grain size 0.7 μm) with lower values of resistivity (1 Ω cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single-crystal values). A hopping conduction mechanism has been detected at the lower measuring temperature (T〈150 K), and a grain boundary limited conduction process at the higher measurements temperature (T〉150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347113
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  • 3
    Electronic Resource
    Electronic Resource
    Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1906-1913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600 °C without any change in the oxygen to silicon ratio of the films. The activation energy of the hydrogen release is in the 0.21–0.41 eV range independently of film composition, suggesting that the process occurs via network bond reactions. For annealing temperatures higher than 700 °C, a change in the Si–O–Si stretching wave number from the initial unannealed value to the 1070–1080 cm−1 range was promoted, independently of the initial film composition. Electron spin resonance measurements showed that all the films contain two type of bulk paramagnetic defects: the E′ center (•Si(Triple Bond)O3) and the silicon dangling bond center (•Si(Triple Bond)Si3). The RTA process promotes a general decrease of defect concentration for annealing temperatures below 400 °C. At higher temperatures, E′ center disappears, and the •Si(Triple Bond)Si3 center increases its concentration up to the 1017–1018 cm−3 range. This suggests that the RTA at higher temperatures promotes the formation of a high-quality, almost defect-free, SiO2 matrix in which highly defective Si nanocrystals are also formed, where the •Si(Triple Bond)Si3 centers are located. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495068
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  • 4
    Electronic Resource
    Electronic Resource
    Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2055-2061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the effect of thermal processes on the optical properties (refractive index, optical gap, Tauc coefficient, and Urbach energy) of SiNx:H films. Films with three different nitrogen to silicon ratios (x=0.97, x=1.43, and x=1.55, respectively) were deposited by a chemical vapor deposition technique assisted by an electron cyclotron resonance generated plasma. After deposition they were subjected to rapid thermal annealing at temperatures ranging from 300 °C to 1050 °C. We found that the percolation threshold for Si–Si bonds (at x=1.1) separates films with different response to thermal treatments. The changes of the Tauc coefficient and the Urbach energy at moderate annealing temperatures indicate a structural relaxation of the network for the films with x above the percolation threshold, while at higher temperatures the trends are inverted. In the case of x below the percolation limit the inversion point is not observed. These trends are well correlated with the width of the Si–N infrared stretching absorption band. Additionally the samples with as-grown x=1.43 show a good correlation between the Urbach energy and the density of unpaired spins in silicon dangling bonds. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371008
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  • 5
    Electronic Resource
    Electronic Resource
    Improvements in soil quality and performance of mycorrhizal Cistus albidus L. seedlings resulting from addition of microbially treated sugar beet residue to a degraded semiarid Mediterranean soil (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Soil use and management 19 (2003), S. 0 
    Details
    ISSN: 1475-2743
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract. A field experiment was undertaken to assess the effectiveness of a combined treatment, involving addition of Aspergillus niger-treated sugar beet (SB) residue in the presence of rock phosphate and mycorrhizal inoculation of seedlings with Pisolithus tinctorius. The aim was to improve the physical, chemical, biochemical and biological properties of a degraded semiarid Mediterranean soil. Short-term effects of such improvements on the establishment of Cistus albidus L. seedlings were evaluated. Eight months after planting, macronutrients (NPK), total carbohydrates, water-soluble C, water-soluble carbohydrates, microbial biomass C and enzyme activities (dehydrogenase, urease, protease, acid phosphatase and β-glucosidase) measured in the rhizosphere soil of C. albidus were increased greatly by addition of fermented SB residue. Soil structural stability improved only with the fermented SB addition (about 79% higher in the amended soils than in the non-amended soils). The mycorrhizal inoculation was the most effective treatment in improving the growth of C. albidus plants, but only slightly improved soil quality. Growth of inoculated plants was about 33% greater than plants grown in the amended soil and about 131% greater than control plants. The combined benefit of mycorrhizal inoculation of seedlings and addition of fermented SB residue to soil on plant growth was similar to that of the treatments applied individually.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1475-2743.2003.tb00316.x
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  • 6
    Electronic Resource
    Electronic Resource
    Nutrient acquisition and nitrate reductase activity of mycorrhizal Retama sphaerocarpa L. seedlings afforested in an amended semiarid soil under two water regimes (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Soil use and management 21 (2005), S. 0 
    Details
    ISSN: 1475-2743
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract. We studied the effect of inoculation with three arbuscular-mycorrhizal (AM) fungi (Glomus intraradices Schenck & Smith, Glomus deserticola (Trappe, Bloss. & Menge) and Glomus mosseae ([Nicol & Gerd.] Gerd. & Trappe) and the addition of composted sewage sludge on root nitrate reductase (NR, EC 1.6.6.1.) activity, mycorrhizal colonization, plant growth and nutrient uptake in Retama sphaerocarpa L. seedlings afforested in a semiarid, degraded Mediterranean soil under well-watered and non-watered conditions. Six months after planting, the mycorrhizal inoculation and the irrigation of plants had a strong effect on the growth parameters. The effect on plant growth was a negative interaction between plant irrigation and mycorrhizal inoculation and a positive interaction between plant irrigation and composted sewage sludge addition. The latter treatment had a significant, but moderate, effect on the growth but conferred no additional benefit when combined with mycorrhizal inoculation. Mycorrhizal inoculation, composted sewage sludge and irrigation had a significant effect on NR activity in roots and on foliar nutrients. The irrigation significantly increased the positive effect of composted sewage sludge on NR activity and the concentrations of foliar N and K. The effect of mycorrhizal inoculation on NR activity did not depend on the water regime. The effectiveness of mycorrhizal inoculation on the establishment and growth of R. sphaerocarpa seedlings in these Mediterranean conditions was independent of water regime. The addition of composted sewage sludge was only effective when soil water was freely available. The combination of mycorrhizal inoculation and composted sewage sludge addition had no synergistic effect on plant growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1475-2743.2005.tb00100.x
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  • 7
    Electronic Resource
    Electronic Resource
    Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5325-5330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forward bias is recombination in the space-charge zone, whereas a thermally activated tunneling mechanism involving a trap at 0.32 eV dominates at reverse bias. Five deep levels located in the upper-half of the band gap were detected in the junctions by DLTS measurements, three of which (at 0.6, 0.45, and 0.425 eV) were found to appear due to rapid thermal annealing. The origin of the other two levels, at 0.31 and 0.285 eV, can be ascribed to implantation damage. Admittance spectroscopy measurements showed the presence of three levels at 0.44, 0.415, and 0.30 eV, all in agreement with those found by DLTS. The DLTS measurements showed that the concentration of deep levels decreased after longer annealing times, and that the concentration of deep levels due to the implantation increased after additional P or Si implantations. This explains the influence of annealing time and additional implantations on the I-V characteristics of the junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359710
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  • 8
    Electronic Resource
    Electronic Resource
    Raman-scattering assessment of Si+-implantation damage in InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3927-3929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the lattice damage caused by Si+ implantation into semi-insulating InP, with doses in the range of 1012 to 5×1014 cm−2, and the subsequent lattice recovery achieved by rapid thermal annealing (RTA), by means of Raman spectroscopy. With increasing implantation dose, an intensity reduction of the first- and second-order Raman peaks characteristic of crystalline InP is observed, together with the enhancement of disorder-activated modes. In samples implanted with doses higher than 1014 cm−2 the Raman spectra resembles that of amorphous InP, and the samples can be considered as fully amorphized. By RTA at 875 °C for 10 s, sample crystallinity is recovered, even in the case of those samples implanted with the highest dose. After annealing, the Raman spectra show no evidence of disorder-activated modes, and the intensity of the characteristic second-order peaks approaches the value found in unimplanted InP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361819
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  • 9
    Electronic Resource
    Electronic Resource
    Use of Kramers–Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7830-7836 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of Kramers–Kronig transforms is proposed for the treatment of admittance spectroscopy data of junctions when significant shunt conductance or series resistance is present. An algorithm has been implemented to calculate the transformations numerically and the validity of the method developed has been tested using simulated data. Two experimental systems, p-n junctions into InP made by ion implantation, and atomic-layer-epitaxy-grown CdS/CdTe heterojunctions, have been characterized using this procedure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362391
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  • 10
    Electronic Resource
    Electronic Resource
    Deposition of SiNx:H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 332-338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 °C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films with the ratio N/Si〈1.33) or to nitrogen (for films where the ratio N/Si is higher than 1.33). In the films with the N/Si ratio of 1.38, the hydrogen content is 6 at. %. For compositions which are comprised of between N/Si=1.1 and 1.4, hydrogen concentration remains below 10 at. %. The films with N/Si=1.38 exhibited the better values of the electrical properties (resistivity, 6×1013 Ω cm; and electric breakdown field, 3 MV/cm). We have used these films to make metal-insulator-semiconductor (MIS) devices on n-type silicon wafers. C–V measurements accomplished on the structures indicate that the interface trap density is kept in the range (3–5)×1011 cm−2 eV−1 for films with the N/Si ratio below 1.38. For films where the N/Si ratio is higher than 1.4, the trap density suddenly increases, following the same trend of the concentration of N–H bonds in the SiNx:H films. The results are explained on the basis of the model recently reported by Lucovsky [J. Vac. Sci. Technol. B 14, 2832 (1996)] for the electrical behavior of (oxide–nitride–oxide)/Si structures. The model is additionally supported by deep level transient spectroscopy measurements, that show the presence of silicon dangling bonds at the insulator/semiconductor interface (the so-called PbN0 center). The concentration of these centers follows the same trend with the film composition of the interface trap density and, as a consequence, with the concentration of N–H bonds. This result further supports the N–H bonds located at the insulator/semiconductor interface which act as a precursor site to the defect generation of the type •Si≡Si3, i.e., the PbN0 centers. A close relation between interface trap density, PbN0 centers and N–H bond density is established. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366713
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