Bibliothek

feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
Materialart
Erscheinungszeitraum
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2249-2252 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Growth and interface formation of the Ga1−xInxSb/InAs (x≤0.4) strained-layer superlattices (SLSs) on GaSb(100) substrates have been studied by the reflection high-energy electron diffraction (RHEED) during molecular beam epitaxy. A number of surface atomic structures were observed in the growth of the SLS: a (1×3) phases from the InAs epilayer surface; a (2×3) phase, a (2×4) phase and diffuse (1×1)-like phases from the InAs epilayer surface. The RHEED intensity variations in the formation of the interfaces have been discussed in terms of interface chemical reactions.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5908-5912 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have used the technique of molecular beam epitaxy to grow InAs on GaSb, GaSb on InAs, and InAs/InxGa1−xSb (0≤x≤0.4) multilayered structures and have performed a detailed investigation of the layers and resultant interfaces. The structures were grown on (100) oriented GaSb or GaAs substrates. Combined reflection high energy electron diffraction, x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) studies indicate that Sb is persistently present on the InAs growth surface. XPS and AES analysis of InAs/GaSb heterojunctions indicates no compound formation at either the InAs/GaSb or GaSb/InAs interface. Secondary ion mass spectroscopy (SIMS) and XPS extinction profiles reveal the presence of approximately 5–10% As in the nominally pure GaSb layers. Analysis of InAs/GaSb/GaSb (100) structures by SIMS indicates that the As is incorporated during growth. The multilayer structures have been characterized by double crystal x-ray diffraction and the data has been modeled using kinematic formulations. We find that the experimental data is fitted by assuming atomically abrupt composition changes across the interfaces.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2833-2837 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Adsorption of Ba and its effect on the GaAs(110) surface oxidation has been studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The Ba adsorption onto the surface results in a disordered interface of Ba and the GaAs surface at temperatures 〈500 °C. However, the reactivity of the GaAs surface to oxygen is dramatically enhanced by the adsorbed Ba atoms. This enhancement of the surface oxidation is proportional to the Ba exposure. Study of LEED and AES intensities has also revealed evidence of Ba-induced surface disorder on the GaAs.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3609-3613 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The interaction of strontium overlayers with atomically clean Si(100) surface has been studied by x-ray photoelectron spectroscopy. Also studied were the effects of Sr overlayers on the oxidation of silicon at different Sr coverage (0≤θ≤1.85) and different oxygen exposure. It is found that at low coverage, θ≤1 monolayer (ML), Sr interacts with the Si(100) surface to form a strong ionic bond. Also, Sr is found to significantly increase the oxidation of the Si(100) surface. Silicon oxidation increased with increasing Sr coverage to a maximum at θ≈1 ML. Above 1-ML Sr coverage, the rate of Si oxidation decreased with increasing coverage.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2323-2325 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O6+δ thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O6+δ film growth on silicon with thin buffer layers has shown c orientation and Tc0=78 K.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 6
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Langmuir 5 (1989), S. 582-588 
    ISSN: 1520-5827
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    Digitale Medien
    Digitale Medien
    New York, NY [u.a.] : Wiley-Blackwell
    Fire and Materials 22 (1998), S. 103-108 
    ISSN: 0308-0501
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Architektur, Bauingenieurwesen, Vermessung , Maschinenbau
    Notizen: The thermal decomposition of six different samples of wood and leaves in nitrogen has been studied by using dynamic thermogravimetry. In the experiments two main weight loss processes took place and the total weight loss at 500°C was over 95% in all six cases. By means of the Doyle method, the two processes were found to fit most closely the plot for the second-order equation in the form dα/dt=k(1-α)2, and each of the weight loss processes was found to be controlled, respectively, by two dominant reactions as the temperature increases. It was inferred that competing reactions occur during the overall temperature interval for all the six samples. By comparing the activation energies using this model with those by the method of Moll et al., and by comparing the experimental and theoretical thermogravimetric curves, the ‘second-order’ model was tested to be able to predict the weight loss processes of the samples with very good accuracy. It can be concluded that the ‘second-order’ kinetic model acts much better than the conventionally adopted first-order model. © 1998 John Wiley & Sons, Ltd.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 8
    Digitale Medien
    Digitale Medien
    New York, NY [u.a.] : Wiley-Blackwell
    Fire and Materials 22 (1998), S. 219-220 
    ISSN: 0308-0501
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Architektur, Bauingenieurwesen, Vermessung , Maschinenbau
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...