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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2025-2035 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this paper, we emphasize the temperature- and exposure-dependent development of low-energy electron diffraction patterns,measured quantitatively during oxidation of Ni(100) at 80 to 400 K. We find a strong temperature dependence in the development of LEED patterns associated with NiO. NiO(111) is favored by adsorption temperatures below 300 K, whereas a (7×7)-like structure is favored by adsorption temperatures of 300 to 400 K. Room temperature is a "crossover'' point between these two forms of the oxide. The final oxide depth is independent of adsorption temperature and, therefore, of epitaxial orientation, between 80 and 400 K. When the sample is heated in vacuum after adsorption, massive rearrangements take place above 500 K. Some of the nickel reverts to metallic nickel covered by a c(2×2) oxygen overlayer, and some forms NiO crystallites which are probably deeper than the initial oxide skin. Effectively, the parent oxide disproportionates into a less-oxygen-rich phase and a more-oxygen-rich phase. This is again independent of the orientation of the initial oxide epitaxy.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 752-754 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ultrahigh-vacuum compatible sample manipulator which incorporates rotation and a Dewar for sample cooling is described. The rotation is accomplished using a differentially pumped rotary seal made of two Teflon O rings and the temperature of the sample can be controlled from 30 K to over 1600 K.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4780-4783 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) (001) thin films, integrated to high Tc superconducting YBa2Cu3O7−x (YBCO) films used as electrodes, have been studied for their photocurrent response and permittivity as a function of temperature. A stable photocurrent was observed to increase with increasing the temperature over the range of 25–350 °C. This increase was found to be strongly polarization dependent and due to the change of the pyroelectric coefficient of PZT thin film with temperature. The pyroelectric coefficient for a PZT sample was measured as ∼30 nC/cm2 K at room temperature, and ∼80 nC/cm2 K at 320 °C. The YBCO electrode showed a stable metallic resistance behavior in this temperature range. There was no detectable photocurrent from YBCO layer. No poling is required until 350 °C for the PZT/YBCO heterostructure detector because the PZT film is oriented when grown on c-axis oriented YBCO. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1004-1007 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (Mn, Sb) doped Pb(Zr, Ti)O3 (PMSZT) thin film infrared (IR) detectors were integrated with Si substrates. The epitaxial PMSZT thin films, deposited on c-axis oriented YBa2Cu3O7−y (YBCO) bottom electrodes, show good ferroelectric properties with a remnant polarization Pr of 31 μC/cm2, a spontaneous polarization Ps of 38 μC/cm2, and a coercive field Ec of 21 kV/cm under an electric field of 76 kV/cm. Doping with Mn and Sb into Pb(Zr, Ti)O3 (PZT) not only decreased the Curie temperature TC from 350 °C for PZT to 175 °C for PMSZT, but also enhanced IR responsivity significantly. PMSZT thin films show high figures of merit, Fi of 15.5×10−9 C cm/J, Fv of 1758 cm2/C and Fd of 5×10−5 Pa−1/2 at 25 °C. IR detector arrays, fabricated with PMSZT films deposited on YBCO microbridges with an air gap between them and the substrate for reduced thermal mass, show a higher IR voltage responsivity compared to those without an air gap. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2749-2751 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films. Electric field-direction-dependent resistance changes of more than 1700% were observed under applied pulses of ∼100 ns duration and as low as ±5 V magnitude. The resistance changes were cumulative with pulse number, were reversible and nonvolatile. This electrically induced effect, observed in CMR materials at room temperature has both the benefit of a discovery in materials properties and the promise of applications for thin film manganites in the electronics arena including high-density nonvolatile memory. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4980-4984 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mn- and Sb-doped PbZrTiO3 (PMSZT) thin-film pyroelectric infrared (IR) detectors have been fabricated on c-oriented YB2Cu3O7−x (YBCO) thin films. The thin-film heterostructure detectors were prepared by pulsed laser deposition on LaAlO3 (100) substrates. The YBCO layer in the PMSZT/YBO heterostructure was used as an atomic template for the epitaxial growth of the PMSZT thin films, as well as a nonsuperconducting electrode and IR reflector in the detector. Mn and Sb doping was used to tune the Pb(Zr,Ti)O3 transition temperature to a lower value (Curie temperature of ∼170 °C), and hence, to modify the pyroelectric and dielectric properties of the pyroelectric material. The PMSZT IR detectors were examined as to their photovoltage and photocurrent in response to IR source temperature, detector temperature, and chopper frequency. The experimental results show that the detector has relatively high IR sensitivity with a detectivity D* of ∼4×108 cm Hz1/2/W, and is capable of operating from room temperature to ∼170 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7130-7133 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ferroelectric-superconducting photodetector has been developed and characterized. An atomically ordered PbZrTiO3 (PZT) ferroelectric gate was grown over a c-oriented YBa2Cu3O7−x (YBCO) high Tc superconductor substrate by excimer laser deposition. Irradiation of the PZT gate with photons near the ferroelectric gap energy resulted in a measurable change of the drain-source photocurrent with the device at a temperature near Tc of the YBCO. The critical temperature of the YBCO base was shifted up to 4 K when the PZT gate was irradiated with photon flux of wavelength from 300 to 500 nm. A responsivity of 360 A/W was measured and an upper bound on response time to optical irradiation of 100 ns was determined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2323-2325 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O6+δ thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O6+δ film growth on silicon with thin buffer layers has shown c orientation and Tc0=78 K.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1172-1174 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature photoresponse properties for a PbZrxTi1−xO3/YBa2Cu3O7−x thin-film heterostructure capacitor are reported. The fast optical readout effect measured for the device while the YBCO bottom electrode was superconducting indicates a fall time dependent on YBCO state. A simple equivalent circuit model confirmed that the temperature dependence of the YBCO electrode resistance is responsible for the variation of the fall time of the optical readout signal. Such heterostructures can be used to fabricate high power, radiation-hard optical sensors which cover the whole visible range. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1789-1791 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization retention for Au/Pb(Zr0.52Ti0.48)O3/YBa2Cu3O7−x ferroelectric capacitors has been studied at elevated temperatures. A device with an effective area of 4×10−3 cm2 and 1 μm thickness was fabricated, and its retention measured at 150 °C and 200 °C. The retention was studied for two polarization directions in Pb(Zr0.52Ti0.48)O3 (PZT) by the pyroelectric current and phase detection method as well as by the conventional double pulse method. A polarization degradation of less than 5.5% was detected for PZT at 200 °C for more than 24 h. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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