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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells'' [Appl. Phys. Lett. 67, 3432 (1995)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2591-2591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116792
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of InGaAs/InAlAs strained double quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5348-5351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements have been performed on a In0.82Ga0.18As/In0.52Al0.48As strained double quantum wells with narrow well widths of 38 and 48 A(ring). The band offset ratio Qc in this narrow quantum well structures was found to be 0.70±0.01. Based on a steady-state photoluminescence model, the temperature and laser excitation dependences of the luminescence intensity allow us to conclude that the thermal quenching of luminescence is controlled by the quantum transport of the photogenerated carriers for temperature below 125 K, while the dominant luminescence quenching mechanism above 150 K is a thermally activated detrapping of carriers from the wells into barriers, followed by nonradiative recombination in the barriers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363474
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Fe1−xNix/Cu Invar superlattices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2327-2333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared by sputtering techniques a series of fcc [Fe1−xNix/Cu]×10 superlattices with sublayer thicknesses of 3 nm and with Ni concentrations x ranging from 0.26 to 0.54. The use of MgO single-crystal substrates and Cu sublayers in the superlattice growth ensures a well-defined fcc crystal structure in the Fe–Ni sublayers with a Ni concentration as low as 26 at. % and down to liquid helium temperatures. The magnetization of the Fe–Ni sublayers in the superlattices starts to deviate from the well-known Slater–Pauling curve at 40 at. % Ni, and continues to drop until the fcc–bcc transition is completed. A strong dependence of the magnetization on temperature was also observed for the Fe–Ni sublayers in the Invar range, consistent with the behavior of bulk Fe–Ni Invar alloys. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363065
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  • 4
    Electronic Resource
    Electronic Resource
    Optical and photoelectrical properties of β-FeSi2 thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4793-4795 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Absorption, photocurrent, and infrared reflectivity spectra of the polycrystalline β-FeSi2 thin films in relation to the Si substrate temperature are presented. The photocurrent spectra involving both the fundamental interband, extrinsic defect transitions of β-FeSi2 and the intrinsic transitions of Si substrates are observed. Both the absorption and photocurrent measurements show the direct gap nature. A simple recombination model is proposed to account for the photocurrent results. We show that better quality β-FeSi2 films can be achieved at higher substrate temperature. The simplicity, sensitivity, and reliability of the photocurrent measurements for studying β-FeSi2 are well demonstrated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359761
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  • 5
    Electronic Resource
    Electronic Resource
    Raman study of the time evolution of the facet temperature of coated AlGaAs single-quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5433-5435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Facet temperature and output power of coated AlGaAs single-quantum-well lasers were examined as a function of operating time. In contrast to previous results on uncoated lasers, which show a linear rise of facet temperature with time, these measurements on coated lasers show an initial rapid rise and then a substantial slowing of the temperature rise rate. Qualitatively similar behavior is observed in both the temperature rise and power degradation rates. Facet temperature measurements as a function of drive current at time zero show no observable discontinuity at threshold; however, formation of a kink at threshold is observed soon after stressing the lasers at constant current, suggesting a large role of photon heating in the facet degradation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355699
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  • 6
    Electronic Resource
    Electronic Resource
    Crystal structure and magnetism of LaCo13−x−yFexSiy compounds (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 336-341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and magnetic properties of LaCo13−x−yFexSiy compounds were investigated by means of x-ray powder diffraction and magnetization measurements. The substitution of Si for Co induces an order–disorder transition from the cubic NaZn13-type to its tetragonal derivative structure, while the substitution of Fe for Co does not induce such a phase transition. After annealing treatment, the homogeneous range of the cubic phase is narrowed and that of the tetragonal phase is extended. From crystallographic and thermodynamic points of view, the sta- bility of the cubic and the tetragonal phases is discussed. The measured magnetic moment of LaCo13−x−yFexSiy coincides well with the theoretical prediction based on the magnetic valence model. Within the framework of this model, LaCo13−x−yFexSiy compounds can be considered as strong ferromagnets and their magnetic moment can be theoretically predicted. The composition dependence of Curie temperature is discussed within the mean field approximation. At higher iron concentration the decrease of Curie temperature with Fe concentration might be attributed to the increase of the number of antiferromagnetically coupled Fe–Fe pairs and the decrease of the ferromagnetic coupling between transition metal atoms. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362786
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  • 7
    Electronic Resource
    Electronic Resource
    Erratum: Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells [J. Appl. Phys. 78, 5696 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4474-4474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362717
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5696-5700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Ga0.75In0.25As0.04Sb0.96/Al0.22Ga0.78As 02Sb0.98 strained multiple- quantum-well structure grown by molecular-beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures ≤80–100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature-dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359628
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1178-1182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and absorption spectra of strained InGaAs/GaAs single quantum well (SQW) and multiple quantum well (MQW) structures as a function of well width have been investigated in detail. It has been demonstrated that the strength of the exciton-LO phonon coupling is quite stronger in InGaAs/GaAs SQW structures than that of InGaAs/GaAs MQW structures by aid of the temperature-dependent linewidth analysis. The critical temperature for the excitonic polariton-mechanical exciton transition in InGaAs/GaAs quantum well structures is found to be ∼35 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360354
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature-dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2139-2141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature-dependent exciton behavior in a quaternary Ga0.67In0.33As0.01Sb0.99/Al0.25Ga0.75As 0.2Sb0.98 strained single-quantum-well (SQW) structure by photoluminescence spectroscopy. Strong exciton resonances are observed and have been attributed to localized excitons below 80 K and to free excitons at high temperatures. Nevertheless, we show that the experimental results of stronger exciton–phonon coupling in the quaternary SQW structure would lead to partial ionization of free excitons at temperatures above 125 K, in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361072
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