Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 1383-1385
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However, resulting group III atom profiles are not completely uniform even after Zn diffusion. These results suggest that large lattice mismatch suppresses the intermixing process by Zn diffusion.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99123
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