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Digitale Medien

Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures (1987)

Baratte, H. ; Jackson, T. N. ; Solomon, P. M. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 1459-1461

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Electrical measurements of n+-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET's) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900 °C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance–deplete heterostructure SISFET's with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.98657

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