ISSN:
0020-7608
Keywords:
Computational Chemistry and Molecular Modeling
;
Atomic, Molecular and Optical Physics
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
Notes:
Ground state one-electron energies have been calculated for the substitutional and interstitial helium, neon, and argon impurities in silicon by use of the self-consistent-field multiple-scattering Xα method within the framework of the Watson-sphere-terminated molecular cluster model. The substitutional noble gas atoms are found to inhibit the rebonding of the first neighbor's dangling bonds through orthogonality repulsion. The interstitial nobel gas atoms induce empty shallow levels close to the bottom of the conduction band. We tentatively relate these levels to the emission bands observed for silicon crystals implanted with helium, neon, and argon.
Additional Material:
2 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/qua.560300732
