ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract We report the results of an experimental study of molecular-beam epitaxy of ZnSe-based laser heterostructures with a new structure of the active region, which contains a fractional-monolayer CdSe recombination region in an expanded ZnSe quantum well and a waveguide based on a variably-strained, short-period superlattice are reported. Growth of a fractional-monolayer CdSe region with a nominal thickness of 2–3 ML, i.e., less than the critical thickness, on a ZnSe surface (Δa/a∼7%) leads to the formation of self-organized, pseudomorphic, CdSe-enriched islands with lateral dimensions ∼10–30 nm and density ∼2×1010 cm−2, which serve as efficient centers of carrier localization, giving rise to effective spatial separation of defective regions and regions of radiative recombination and, as a result, a higher quantum efficiency. Laser structures for optical pumping in the (Zn, Mg) (S, Se) system with a record-low threshold power density (less than 4 kW/cm2 at 300 K) and continuous-wave laser diodes in the system (Be, Mg, Zn) Se with a 2.5 to 2.8-ML-thick, fractional-monolayer CdSe active region have been obtained. The laser structures and diodes have an improved degradation resistance.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187829
