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Digitale Medien

GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates (2000)

Xin, H. P. ; Welty, R. J. ; Tu, C. W.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 1946-1948

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Red light-emitting diodes (LEDs) emitting at 670 nm and employing GaN0.011P0.989 p–n homojunction grown on a (100) GaP substrate by gas-source molecular beam epitaxy with a rf plasma nitrogen source have been obtained. The integrated photoluminescence intensity of GaNP p–n homojunction LED is 5 times stronger than that of Ga0.51In0.49P bulk layer, but the peak width is much broader. Compared to conventional high-brightness AlGaInP red LEDs, our LED structure saves two process steps of etch removing of the GaAs absorbing substrate and wafer bonding to a GaP transparent substrate. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1311957

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