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  • 1
    Electronic Resource
    Electronic Resource
    Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0≤X≤0.024) grown by gas-source molecular beam epitaxy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1416-1418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: P-type, Be-doped GaInNAs layers (1100 Å thick) are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. High-resolution x-ray rocking curves show that the Ga0.892In0.108NxAs1−x peak shifts closer to the GaAs substrate peak with increasing N concentration, indicating reduced strain. After rapid thermal annealing (RTA) at 700 °C for 10 s, the Ga0.892In0.108As sample suffers strain relaxation, but the N-containing samples remain pseudomorphically strained, suggesting better thermal stability of GaInNAs. The wavelength of room-temperature photoluminescence redshifts from 0.988 to 1.276 μm, due to large band gap bowing, with N concentration increased from 0 to 0.024. Secondary ion mass spectrometry results show no Be diffusion, but hydrogen incorporation alongside N. The free carrier concentration is decreased by one order of magnitude mainly due to H passivation, but after RTA at 700 °C, it is increased to half that of GaInAs due to the reduced H concentration. The product of carrier concentration and Hall mobility is increased from one-tenth to about half that of the GaInAs sample. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124711
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2180-2182 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaNxP1−x/GaP multiple quantum wells (MQWs) with various N concentrations and well thicknesses were grown on (100) GaP substrates by gas source molecular beam epitaxy with a radio frequency nitrogen radical beam source. The N concentration and GaNP well thickness were determined by high-resolution x-ray rocking curve measurements and theoretical dynamical simulations. Photoluminescence (PL) measurements show that the PL wavelength of GaNP redshifts and the band edge emission integrated intensity increases with increasing N concentration, up to 2.5%. By using an infinite barrier model and various well thicknesses of GaN0.025P0.975/GaP MQWs, a large conduction-band effective mass mc*∼0.9 me is obtained for the GaN0.025P0.975 alloy, indicating a mixing of Γ and X wave functions in the conduction band. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1313813
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  • 3
    Electronic Resource
    Electronic Resource
    Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 994-996 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga0.3In0.7NxAs1−x (x≤0.04) and InNxAs1−x (x≤0.02) self-assembled quantum dots are fabricated on GaAs by gas-source molecular beam epitaxy. The effect of growth temperature on island density, island size, and optical properties is studied in detail. From a single layer of Ga0.3In0.7N0.04As0.96 dots embedded in GaAs, peak photoluminescence wavelength of up to 1.52 μm is detected at room temperature. Thus, the fabrication of 1.3 and 1.55 μm GaInNAs quantum dot lasers on GaAs becomes feasible. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125917
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of nitrogen on the band structure of GaNxP1−x alloys (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1267-1269 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that the incorporation of N in GaNxP1−x alloys (x≥0.43%) leads to a direct band-gap behavior of GaNP. For N concentration lower than 0.43%, a series of sharp emission lines from the various N pair centers are observed for GaNP bulk layers. With increasing N concentration higher than 0.43%, a strong photoluminescence (PL) emission from GaNP bulk layers is observed at room temperature. While the PL peak redshifts with increasing N concentration to 3.1%, the PL intensity remains as intense. Absorption measurements show a direct band-gap behavior of GaNP alloys. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126005
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  • 5
    Electronic Resource
    Electronic Resource
    GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1946-1948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Red light-emitting diodes (LEDs) emitting at 670 nm and employing GaN0.011P0.989 p–n homojunction grown on a (100) GaP substrate by gas-source molecular beam epitaxy with a rf plasma nitrogen source have been obtained. The integrated photoluminescence intensity of GaNP p–n homojunction LED is 5 times stronger than that of Ga0.51In0.49P bulk layer, but the peak width is much broader. Compared to conventional high-brightness AlGaInP red LEDs, our LED structure saves two process steps of etch removing of the GaAs absorbing substrate and wafer bonding to a GaP transparent substrate. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311957
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2337-2339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a quantum dot-like behavior of GaInNAs due to composition nonuniformity of N and In in GaInNAs/GaAs quantum wells (QWs). Images of cross-sectional transmission electron microscopy show that the wells of both Ga0.7In0.3As/GaAs and Ga0.7In0.3N0.02As0.98/GaAs are undulated due to lateral variations in strain. This effect is more pronounced in the N-containing QWs due to nonuniform In and N concentrations. Rapid thermal annealing causes a blueshift of the photoluminescence (PL) peak, and results in a splitting of the as-grown broad PL emission into two peaks. The In and N composition fluctuation after annealing becomes predominantly bimodal. The low-energy PL peak is attributed to excitons localized at deep levels, which are originated from In- and N-rich regions in the wells acting as quantum dots (QD). The high-energy peak PH is likely due to the excitons of the 2D QWs. To reduce the local strain, N atoms are preferentially localized in the In-rich regions, so the separation between these two peaks increases with increasing N concentration. Increasing excitation intensity results in a significant blueshift for PL and little blueshift for PH, due to the easier band filling of the localized QD states than QW states. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123843
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  • 7
    Electronic Resource
    Electronic Resource
    GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2442-2444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInNAs/GaAs multiple quantum wells (MQWs) with different N composition were successfully grown on semi-insulating GaAs substrate by gas-source molecular beam epitaxy. A nitrogen radical beam source was used to incorporate N into GaInAs layers. High resolution x-ray rocking curves measurements indicate that the N composition in GaInNAs layer was increased from 0.009 to 0.03 with increasing N2 flow rate. Photoluminescence (PL) measurements show that the PL wavelength red shifts with increasing N composition in GaInNAs layer. For a 7-period Ga0.7In0.3N0.02As0.98/GaAs MQW, a PL peak at 1.3 μm wavelength at room temperature has been successfully obtained. The band offset ΔEc for Ga0.7In0.3NxAs1−x/GaAs enlarges quickly from 0.26 eV to 0.56 eV with increasing N concentration from 0% to 3%. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121378
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  • 8
    Electronic Resource
    Electronic Resource
    Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4491-4494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual donors in the high purity InP epitaxial layer grown by gas source molecular beam epitaxy (GSMBE) have been identified by a photothermal ionization technique in a magnetic field. The dominant residual donors in GSMBE InP are identified to be silicon and sulfur. The Zeeman effect of the hydrogenic donors has also been investigated. The 1s–3p photothermal ionization transitions of the hydrogenic donors are observed even at zero magnetic field. The photoconductivity transition related to the LO phonon is observed and discussed. Furthermore, the photothermal ionization transitions arising from different chemical donors are also clearly resolved in a magnetic field. From the spectral peaks in magnetic field, the electron effective mass m* in GSMBE InP is estimated to be (0.0817±0.0002)m0. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363410
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