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Effects of nitrogen on the band structure of GaNxP1−x alloys (2000)

Xin, H. P. ; Tu, C. W.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 1267-1269

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report that the incorporation of N in GaNxP1−x alloys (x≥0.43%) leads to a direct band-gap behavior of GaNP. For N concentration lower than 0.43%, a series of sharp emission lines from the various N pair centers are observed for GaNP bulk layers. With increasing N concentration higher than 0.43%, a strong photoluminescence (PL) emission from GaNP bulk layers is observed at room temperature. While the PL peak redshifts with increasing N concentration to 3.1%, the PL intensity remains as intense. Absorption measurements show a direct band-gap behavior of GaNP alloys. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126005

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