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GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy (1998)

Beck, R. G. ; Eriksson, M. A. ; Topinka, M. A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 1149-1151

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have fabricated scanning probe microscope cantilevers with dimensions 65×11.4×0.25 μm3 and 3×2×0.129 μm3 from GaAs/Al0.3Ga0.7As heterostructures containing two-dimensional electron gases. Deflection is measured by an integrated field-effect transistor (FET) that senses strain via the piezoelectric effect and provides a low noise, low power displacement readout. We present images of a 200 nm mica grating taken with the large cantilever having a deflection (force) noise 10 Å/(square root of)Hz (19 pN/(square root of)Hz) at T=2.2 K. The small cantilever has a resonant frequency of 11 MHz, a FET gate charge noise of 0.001 e/(square root of)Hz, and is projected to have a deflection (force) noise of 0.002 Å/(square root of)Hz (1 pN/(square root of)Hz) at T=4.2 K. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122112

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