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  • 1
    ISSN: 1432-1017
    Keywords: Key words Transcription factors ; Glucocorticoid receptor ; DNA response elements ; Protein-DNA complexes ; Cooperative binding
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Physics
    Notes: Abstract Molecular dynamics (MD) simulations of the estrogen receptor DNA-binding domain (ERDBD) as a dimer in complex with its DNA response element (ERE) show a significant difference in both structure and dynamics, compared to a MD simulation of monomeric ERDBD bound to its half-site response element (EREH). The C-terminal zinc binding domain (ZnII), including a region (helix II) which is in a helical conformation in ERE-(ERDBD)2, is considerably more flexible in EREH-ERDBD than in the dimeric complex. In EREH-ERDBD, all helical hydrogen bonds in helix II are broken and the entire ZnII region is detached from a hydrogen bonding network that in ERE-(ERDBD)2 connects to other parts of the protein as well as to the DNA. The regions that become flexible in EREH-ERDBD are identical to the regions where the NMR solution structure of free ERDBD is poorly ordered. This strongly suggests that dimerisation of ERDBD is required for ordering of the ZnII region and that monomeric binding to DNA is not sufficient for the ordering. This contrasts to the glucocorticoid receptor DNA-binding domain (GRDBD) which has essentially the same mobility (uniform and limited), regardless of whether it is free as a monomer in solution, bound as a monomer to its half-site response element or in a dimeric complex with the full response element. The hydrogen bonding network that connects ZnII with other parts of the protein and to DNA is almost identical in ERDBD and GRDBD. However, in GRDBD there is also a serine (in the N-terminal zinc coordinating region) with a central role in this network, connecting to the ZnII region. This serine is replaced by a glycine in ERDBD and we suggest that this substitution is sufficient for destabilisation of the network, thus leading to a more flexible ZnII region, which becomes ordered first upon forming a complex with another ERDBD and DNA.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1149-1151 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated scanning probe microscope cantilevers with dimensions 65×11.4×0.25 μm3 and 3×2×0.129 μm3 from GaAs/Al0.3Ga0.7As heterostructures containing two-dimensional electron gases. Deflection is measured by an integrated field-effect transistor (FET) that senses strain via the piezoelectric effect and provides a low noise, low power displacement readout. We present images of a 200 nm mica grating taken with the large cantilever having a deflection (force) noise 10 Å/(square root of)Hz (19 pN/(square root of)Hz) at T=2.2 K. The small cantilever has a resonant frequency of 11 MHz, a FET gate charge noise of 0.001 e/(square root of)Hz, and is projected to have a deflection (force) noise of 0.002 Å/(square root of)Hz (1 pN/(square root of)Hz) at T=4.2 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3763-3765 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a strain-sensing cryogenic field-effect transistor (FET) from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. The FET has transconductance 100 μS and a small signal drain-source resistance 10 MΩ. The charge noise has a flat spectrum at high frequencies with magnitude 0.2e/(square root of)Hz and 1/f noise corner less than 300 Hz. The piezoelectric effect couples stress in the substrate to the electron density in the FET channel giving an electrical response to applied strain. Strain sensitivity was measured to be 2×10−9/(square root of)Hz, limited by FET noise. Integrated strain-sensing FETs offer advantages for detecting small forces in GaAs/AlGaAs microelectromechanical systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 671-673 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of a scanned probe microscope (SPM) at 4 Kelvin to study electron transport through a ballistic point contact in the two-dimensional electron gas inside a GaAs/AlGaAs heterostructure. The electron gas density profile is locally perturbed by the charged SPM tip providing information about the electron flow through the point contact. As the tip is scanned, one obtains a spatial image of the ballistic electron flux as well as the topographic profile of the structure. Calculations indicate the spatial resolution is comparable to the electron gas depth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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