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  • 1
    Electronic Resource
    Electronic Resource
    Coherent branched flow in a two-dimensional electron gas (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 410 (2001), S. 183-186 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Semiconductor nanostructures based on two-dimensional electron gases (2DEGs) could form the basis of future devices for sensing, information processing and quantum computation. Although electron transport in 2DEG nanostructures has been well studied, and many remarkable phenomena have already ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35065553
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  • 2
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1149-1151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated scanning probe microscope cantilevers with dimensions 65×11.4×0.25 μm3 and 3×2×0.129 μm3 from GaAs/Al0.3Ga0.7As heterostructures containing two-dimensional electron gases. Deflection is measured by an integrated field-effect transistor (FET) that senses strain via the piezoelectric effect and provides a low noise, low power displacement readout. We present images of a 200 nm mica grating taken with the large cantilever having a deflection (force) noise 10 Å/(square root of)Hz (19 pN/(square root of)Hz) at T=2.2 K. The small cantilever has a resonant frequency of 11 MHz, a FET gate charge noise of 0.001 e/(square root of)Hz, and is projected to have a deflection (force) noise of 0.002 Å/(square root of)Hz (1 pN/(square root of)Hz) at T=4.2 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122112
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  • 3
    Electronic Resource
    Electronic Resource
    Charge-imaging field-effect transistor (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1202-1204 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at T=4.2 K has a 1/f behavior and reaches values (very-much-less-than)1e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1395516
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  • 4
    Electronic Resource
    Electronic Resource
    Cryogenic scanning probe characterization of semiconductor nanostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 671-673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of a scanned probe microscope (SPM) at 4 Kelvin to study electron transport through a ballistic point contact in the two-dimensional electron gas inside a GaAs/AlGaAs heterostructure. The electron gas density profile is locally perturbed by the charged SPM tip providing information about the electron flow through the point contact. As the tip is scanned, one obtains a spatial image of the ballistic electron flux as well as the topographic profile of the structure. Calculations indicate the spatial resolution is comparable to the electron gas depth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117801
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