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  • 1
    Electronic Resource
    Electronic Resource
    Observation of magnetization reversal of thin-film permalloy nanostructures using ballistic electron magnetic microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1357-1359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have imaged the magnetization reversal process of thin-film permalloy (Ni80Fe20) nanostructures using ballistic electron magnetic microscopy. Their switching behavior is often influenced by the formation of end domains and the subsequent domain-wall propagation under application of a magnetic field. Occasionally, this process leads to the formation of a 360° domain wall that is stable in fields which would otherwise switch the structure. The resulting state of the nanostructure in zero-applied field is very different from the near-single-domain state typically observed. The magnetization of the structure can show abrupt changes in a fixed magnetic field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290150
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  • 2
    Electronic Resource
    Electronic Resource
    Width dependence of giant magnetoresistance in Cu/Co multilayer nanowires (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1883-1885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron beam lithography and ion milling have been used to pattern sputtered Cu/Co multilayer wires ranging in width from 750 to 35 nm. Samples having Cu thicknesses which correspond to the first, second, and third antiferromagnetic coupling maxima have been measured. Contrary to expectation, enhancement in the amplitude of the giant magnetoresistance with decreasing width was not observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123701
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  • 3
    Electronic Resource
    Electronic Resource
    Spin-polarized current switching of a Co thin film nanomagnet (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3809-3811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin film Co nanomagnet in the shape of an elongated hexagon has been incorporated in a vertical device structure consisting of the nanomagnet and a thin Cu spacer layer formed on top of a thick Co film. The spin-polarized current flowing between the nanomagnet and the Co film is used to abruptly switch the magnetic alignment of the nanomagnet relative to that of the thick Co layer by the transfer of spin angular momentum from the conduction electrons to the nanomagnet moment. The shape anisotropy in the nanomagnet promotes the single domain behavior required for nonvolatile memory applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330562
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  • 4
    Electronic Resource
    Electronic Resource
    Current-induced realignment of magnetic domains in nanostructured Cu/Co multilayer pillars (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 354-356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a nanofabrication technique to facilitate current-perpendicular-to-plane transport measurements on magnetic multilayer pillar structures with diameters as narrow as 100 nm—a size scale at which the reversal of individual domains within the ferromagnetic layers may be detected. When large currents are passed through such pillars, the Oersted field produced by the current can affect the orientation of the magnetic moments of the layers. In pillars ranging from 250 to 500 nm, a stack of alternating hard and soft ferromagnetic layers can controllably be switched between high and low resistance states via this mechanism. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125752
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  • 5
    Electronic Resource
    Electronic Resource
    Cryogenic scanning probe characterization of semiconductor nanostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 671-673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of a scanned probe microscope (SPM) at 4 Kelvin to study electron transport through a ballistic point contact in the two-dimensional electron gas inside a GaAs/AlGaAs heterostructure. The electron gas density profile is locally perturbed by the charged SPM tip providing information about the electron flow through the point contact. As the tip is scanned, one obtains a spatial image of the ballistic electron flux as well as the topographic profile of the structure. Calculations indicate the spatial resolution is comparable to the electron gas depth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117801
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