Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 668-670
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We employed deep-level transient spectroscopy to determine the electrical properties of defects introduced in epitaxially grown n-GaAs during dry etching in a SiCl4 plasma at different rf powers and plasma pressures. We found that SiCl4 etching introduced two prominent defects, one of which is metastable. Current–voltage measurements demonstrated that high barrier Schottky barrier diodes can be fabricated on SiCl4-etched n-GaAs surfaces for all power and plasma pressure conditions investigated. The defect concentration decreased and the diode quality improved when etching at lower rf power and higher plasma pressure. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119824
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