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Position- and temperature-dependent optical properties of spark-processed silicon (1995)

Ludwig, M. H. ; Hummel, R. E. ; Augustin, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 2542-2544

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The structure of spark-processed silicon was examined in a comparative study of optical micrographs utilizing ultraviolet laser light and electron beams for excitation. Whereas the photoluminescence (PL) was found to be dominantly generated in granular structures near the surface, the cathodoluminescence (CL) mainly propagates from holes which were created during the preparation process. PL and CL spectra are not identical in their spectral distributions. Low temperature luminescence measurements for both excitation modes reveal a high degree of local disorder. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114452

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