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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5750-5760 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration life tests were performed on copper-alloyed aluminum test structures that were representative of modern integrated circuit metallization schemes. A total of 18 electrical stress treatments were investigated. One was a steady dc current, and the others were pulsed dc currents varied according to duty cycle and frequency. The duty cycle was varied from 33.3% to 80%, and the frequency was varied such that three distinct orders of magnitude were roughly represented—100 kHz, 1 MHz, and 100 MHz. The median time to failure, t50, was used as the primary basis of comparison between test groups of six–nine samples. There was no discernible dependence of t50 on the pulse frequency. In contrast, the duty cycle, d, played a strong role. Duty cycles greater than 50% produced median lifetimes that varied as 1/d2, while duty cycles equal to and less than 50% produced a shift toward (but not reaching) a 1/d dependence. This shift was most pronounced at the smallest duty cycle of 33.3%, for which lifetimes were midway between the predictions of the 1/d2 and 1/d relationships. Post-test optical micrographs were obtained for each test stripe, and these suggested that the location of electromigration damage was influenced by the pulse duty cycle. Most damage occurred near the cathode contact in all instances, but there was an increased incidence of damage farther downwind with decreasing duty cycle. The results are explained in terms of a Blech length effect that may operate as a result of the bamboo test stripe structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2591-2594 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation damage in silicon has been studied utilizing a new optical technique (differential reflectometry). It has been demonstrated that differential reflectometry can be used to identify whether an implanted layer is crystalline, damaged crystalline, or amorphous. The intensity of interband transitions can be used to determine the thickness of a damaged crystalline layer over a submerged amorphous layer. Interference effects were utilized to determine the thickness of an amorphous layer. Thus, differential optical reflectance has far-reaching potential for characterizing implanted substrates.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3218-3220 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Absorption spectra obtained from spark-processed Si (sp-Si) utilizing differential reflectometry yield a series of closely spaced energy levels, as expected for amorphous materials, which reside between 1.7 and 2.8 eV. Further, a broad absorption band is observed between about 3.2 and about 6.2 eV. A HeCd laser pumps electrons from the ground state into this absorption band. The blue and green photoluminescence peaks of sp-Si are interpreted as originating from emission energy levels at 3.22 and 2.36 eV into which the electrons revert from the just mentioned absorption band by nonradiative transitions. In contrast, pumping with an argon ion laser provides only enough energy to excite the electrons from the ground state into the above mentioned, closely spaced, lower absorption bands and thus causes only a 1.9 eV (red) radiation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5318-5324 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiative and compositional properties of spark-processed silicon are studied by photoluminescence and x-ray photoelectron spectroscopy measurements. Spark processing of silicon is performed in different atmospheres composed of nitrogen and oxygen. As a result of the process, room-temperature radiative transitions occur at 2.35 eV and vary in intensity over five orders of magnitude depending on the N2/O2 ratio. After processing in pure nitrogen or pure oxygen, however, the green photoluminescence (PL) is wiped out and weak blue (2.7 eV) or orange (1.9 eV) PL bands, respectively, are discernable. The temperature-dependent features of the 2.35 eV emission are characterized by an intensity increase in conjunction with a red shift of the peak position at lowered temperatures. A cross-sectional study reveals that the green PL is mainly generated in a near-surface layer having a chemical composition close to SiO2 and a nitrogen concentration below 1 at. %. Nearly no PL was observed from a deeper SiO2 layer enriched by silicon clusters and with an increased density of nitrogen (up to 7 at. %). The findings do not support a quantum-dot-related PL mechanism in spark-processed silicon. It is proposed that nitrogen additions reduce the density of nonradiative centers introduced by silicon dangling bonds. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 18-20 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration experiments have been carried out on aluminum thin films which have been deposited on oxide-free (111) silicon by employing the "ionized cluster beam'' technique as well as other related deposition methods. It has been found that the same high electromigration resistance and film structure is obtained with or without utilizing a nozzled crucible and with or without applying ionization and acceleration voltages during deposition. The conclusions are supported by electromigration lifetime measurements, scanning electron micrographs, optical micrographs, reflective high-energy electron diffraction, and x-ray diffraction.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1765-1767 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unpassivated, pure aluminum films on 7000-A(ring)-thick SiO2 were prepared by ionized cluster beam deposition in a vacuum of 2×10−6 Torr from a carbon crucible which had a nozzle of 2 mm diameter. The resulting particle beam was ionized by impact of electrons and accelerated by an electrical potential towards the substrate. The activation energy for electromigration for these films at temperatures between 125 and 200 °C was found to be 1.1 eV. The initial resistivity of the films was about 12 μΩ cm which decreased to 8 μΩ cm due to annealing at temperatures between 400 and 450 °C.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1965-1967 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed photoluminescence studies on porous, p-type as well as n-type silicon wafers which have been prepared in air or in a dry nitrogen atmosphere, utilizing a spark-erosion technique. This sample preparation, which does not involve aqueous solutions or fluorine contaminants, yields similar photoluminescence spectra as those obtained by anodic etching in HF or unbiased etching in various HF-containing reagents. The wavelength of the photoluminescence peaks are somewhat shifted into the blue region compared to porous silicon obtained by anodic etching. We have also taken photoluminescence spectra on amorphous silicon, SiO2, and oxidized, annealed porous silicon. Our results are interpreted in the light of the presently suggested theories.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2542-2544 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of spark-processed silicon was examined in a comparative study of optical micrographs utilizing ultraviolet laser light and electron beams for excitation. Whereas the photoluminescence (PL) was found to be dominantly generated in granular structures near the surface, the cathodoluminescence (CL) mainly propagates from holes which were created during the preparation process. PL and CL spectra are not identical in their spectral distributions. Low temperature luminescence measurements for both excitation modes reveal a high degree of local disorder. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2771-2773 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements and high-resolution transmission electron microscopy studies on spark-treated (porous) silicon have been performed. Contrary to suggestions put forward by others, it has been found that spark erosion does not yield structures comparable to those obtained for irradiated, that is, damaged silica. Instead, evidence is given that spark treatment of single crystalline silicon wafers produces randomly oriented nanometer-sized silicon crystallites surrounded by a SiO2 matrix. This configuration is believed to be responsible for the observed room temperature visible photoluminescence.
    Type of Medium: Electronic Resource
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