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Low resistance wavelength-reproducible p-type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy (1993)

Chalmers, S. A. ; Lear, K. L. ; Killeen, K. P.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 1585-1587

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report the reproducible molecular beam epitaxial growth of Be-doped piecewise linearly graded (Al,Ga)As distributed Bragg reflectors that have vertical series resistivities near bulk values. For mirrors with three linear segments per interface, the center wavelength reproducibility is 0.1% and the series resistivity is as low as 1.8×10−5 Ω cm2 for hole concentrations of 5×1018 cm−3. Measured reflectivities of 6.0% per interface are comparable to conventional single-linear-grade mirrors. Vertical-cavity surface-emitting lasers incorporating these mirrors exhibit record-low voltage thresholds of less than 1.5 V.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109608

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