ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Reflection high-energy electron diffraction study of the GaAs:Si:GaAs system (1992)

Fahy, M. R. ; Ashwin, M. J. ; Harris, J. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 61 (1992), S. 1805-1807

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Surface structures occurring as a function of coverage during the deposition of Si on GaAs (001) and the further changes brought about by subsequent GaAs overgrowth using molecular beam epitaxy (MBE) have been studied with reflection high-energy electron diffraction (RHEED). Deposition of Si in the presence of an As4 flux causes the surface reconstruction to change systematically from 2×4 to symmetric 3×1 via an asymmetric 3×1 stage. The process is reversed during the overgrowth of GaAs. The change in surface periodicity in the [110] direction from two-fold to three-fold is explained by a superpositioning model. The implications of this for the growth and incorporation mechanisms of Si on GaAs are discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108406

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit