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Growth and characterization of GeO2 films obtained by plasma anodization of epitaxial Ge films (1999)

Busani, T. ; Plantier, H. ; Devine, R. A. B. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 4262-4264

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Amorphous GeO2 has been grown by plasma assisted anodic oxidation at temperatures ≤100 °C. The growth kinetics can be explained in terms of a constant current anodization model. Infrared absorption spectroscopy has been used to characterize the transverse and longitudinal optic vibrational modes of the oxide network. Values are displaced with respect to bulk oxide due to geometrical optic effects and plasma induced network structure variation. In relaxed GeO2 we estimate the mean Ge-O-Ge bridging bond angle to be 〉123° and the full width at half peak height of the bond angle distribution is ∼14°. Electrical measurements on thin oxide capacitors suggest that in 25 nm oxides there are ≤2×1011 negative charges cm−2 and negligible interface state densities. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370341

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