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Electrical characterization of He-plasma processed n-GaAs (1998)

Auret, F. D. ; Meyer, W. E. ; Deenapanray, P. N. K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 84 (1998), S. 1973-1976

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We employed capacitance-voltage (C–V) measurements to determine the free-carrier concentration changes in n-GaAs after processing it in a He plasma, and deep-level transient spectroscopy (DLTS) to study the electrical properties of the plasma-induced defects. C–V measurements indicated that He-plasma processing resulted in a strong carrier reduction up to 1 μm below the GaAs surface. DLTS showed that He-ion processing introduced several prominent defects, including the frequently studied radiation-induced defects E1 and E2, associated with VAs. Current-voltage measurements demonstrated that the He-plasma processing inhibits the fabrication of high barrier Schottky diodes on n-GaAs. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.368329

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